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MMBF170-7

Diodes Incorporated

MMBF170-7 by Diodes Incorporated

Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.

Median Price

$1.506

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

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$1.506

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$1.431

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$1.431

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600

$1.506

$1.431

$1.431

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Vyrian

USA . 7,034 parts In-Stock

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7,034

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Speed Components Ltd

Israel . 2,960 parts In-Stock

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EMSNET

USA . 2,028 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,254 parts In-Stock

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$1.125

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2,254

$1.125

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Semicontronic

India . 505 parts In-Stock

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$1.280

100+ parts

$1.248

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$1.242

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505

$1.280

$1.248

$1.242

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Ampacity Inc.

Singapore . 401 parts In-Stock

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$1.280

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401

$1.280

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Decca Corp

Germany . 305 parts In-Stock

1+ parts

$1.280

100+ parts

$1.254

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$1.242

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305

$1.280

$1.254

$1.242

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Corohmni

South Africa . 168 parts In-Stock

1+ parts

$1.418

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168

$1.418

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.506

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$1.431

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$1.431

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600

$1.506

$1.431

$1.431

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Andel Nordic

Denmark . 5,998 parts In-Stock

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$3.998

100+ parts

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$3.838

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$3.838

5,998

$3.998

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$3.838

$3.838

AZTECH Wire

Italy . 643 parts In-Stock

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$15.979

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643

$15.979

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 66,540 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 17,997 parts In-Stock

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Continental Prestige Electronics

USA . 5,132 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,010 parts In-Stock

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Perfect Parts

USA . 2,800 parts In-Stock

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Futuretech Components

Singapore . 966 parts In-Stock

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Modulus Dynamics

Lithuania . 870 parts In-Stock

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Argo Parts USA

USA . 816 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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$7.447

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$7.447

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$7.447

100

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$7.447

$7.447

$7.447

Lucentia Tech

USA . 100 parts In-Stock

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$7.447

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$7.447

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$7.447

100

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$7.447

$7.447

$7.447

Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience superior performance and reliability with the MMBF170-7 from Diodes Incorporated. This small signal field effect transistor (FET) offers exceptional quality and efficiency, making it ideal for a wide range of switching applications. With its N-CHANNEL configuration and built-in diode, this transistor provides seamless operation and precise control. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Upgrade your electronics with the MMBF170-7 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high efficiency and fast switching speeds, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

This configuration simplifies the circuit design by integrating a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers reliable performance and fast response times.

Surface Mount: YES

Being surface mountable allows for easy installation and efficient use of board space in compact designs.

Minimum DS Breakdown Voltage: 60 V

A high breakdown voltage of 60V ensures reliable operation and protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement and positioning on a circuit board.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for improved control over the transistor, enhancing performance in switching applications.

Maximum Drain Current (Abs) (ID): 0.5 A

With a maximum drain current of 0.5A, this transistor can handle higher current loads, suitable for various applications.

No. of Terminals: 3

With 3 terminals, this transistor offers versatile connectivity options for different circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

The maximum power dissipation of 0.3W ensures efficient heat dissipation and reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact designs and space-saving solutions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high reliability and performance in the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon material offers excellent thermal conductivity and reliability for long-term operation.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and robust connections.

Maximum Drain-Source On Resistance: 5 ohm

A low on-resistance of 5 ohms minimizes power loss and improves efficiency in the circuit.

Terminal Position: DUAL

Dual terminal positions provide flexibility in installation and circuit design.

Maximum Feedback Capacitance (Crss): 5 pF

The low feedback capacitance of 5pF minimizes signal distortion and ensures high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMBF170-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMBF170-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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