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NVR5124PLT1G

Onsemi

NVR5124PLT1G by Onsemi

NVR5124PLT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.47W Power Dissipation, and 1.1A Drain Current. Ideal for applications requiring high temperature tolerance up to 150°C, such as automotive electronics due to AEC-Q101 standard compliance.

Median Price

$0.184

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 24,000 parts In-Stock

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$0.177

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Adafruit Industries

USA . 40 parts In-Stock

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$1.102

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$0.904

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40

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Flip Electronics (Authorized)

USA . 293,000 parts In-Stock

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Farnell

UK . 65,606 parts In-Stock

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$0.204

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$0.103

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Element14

Singapore . 32,060 parts In-Stock

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$0.411

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$0.278

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$0.273

32,060

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Arrow

USA . 30,000 parts In-Stock

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Rochester

USA . 28,800 parts In-Stock

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$0.173

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$0.144

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$0.128

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$0.144

$0.128

Chip1Stop

Japan . 27,000 parts In-Stock

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$0.127

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Verical

USA . 5,500 parts In-Stock

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$0.191

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$0.167

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$0.167

Distributors (In-Stock)

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Digiode

USA . 1,812 parts In-Stock

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$0.135

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Nova Conductors

Japan . 100 parts In-Stock

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Maritex

Poland . 11 parts In-Stock

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NAC Semi

USA . 423,000 parts In-Stock

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Flip Electronics

USA . 341,000 parts In-Stock

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DigiKey Marketplace

USA . 258,000 parts In-Stock

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Chip Stock

USA . 145,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 124,598 parts In-Stock

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Vyrian

USA . 101,125 parts In-Stock

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Component Sense

UK . 38,814 parts In-Stock

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Bristol Electronics

USA . 30,000 parts In-Stock

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$0.338

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$0.135

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$0.091

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$0.338

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$0.091

Sensible Micro Corp

USA . 5,685 parts In-Stock

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IBS Electronics

USA . 5,650 parts In-Stock

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$0.196

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$0.184

ComSIT Distribution GmbH

Germany . 1,020 parts In-Stock

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ComSIT USA

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Kiltronic GmbH

Germany . 50 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 89,262 parts In-Stock

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$0.106

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$0.103

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$0.103

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89,262

$0.106

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Ampacity Inc.

Singapore . 87,819 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Corphita

USA . 1,221 parts In-Stock

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Argo Parts USA

USA . 3,595 parts In-Stock

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$0.185

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$0.179

3,595

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Netroflash

USA . 2,000 parts In-Stock

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$0.192

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$0.182

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$0.178

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$0.192

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Aztec Data Supply Inc.

USA . 343 parts In-Stock

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$0.462

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343

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.102

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$1.003

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$0.904

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40

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Perfect Parts

USA . 3,430,364 parts In-Stock

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iodParts Technologies Inc.

India . 3,430,364 parts In-Stock

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GreenTree Electronics

Israel . 1,200,037 parts In-Stock

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ChipstoGo Electronic ltd

UK . 99,000 parts In-Stock

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RC Electronics

USA . 89,227 parts In-Stock

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Infinite Electronics LLP (Excess)

. 73,813 parts In-Stock

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BidChips

USA . 48,338 parts In-Stock

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iBuyXS LLC

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GlobX GmbH

Germany . 18,900 parts In-Stock

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Lixinc

USA . 17,415 parts In-Stock

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Robosynatics

Brazil . 10,576 parts In-Stock

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$1.514

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$1.483

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$1.483

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$1.483

Lucentia Tech

USA . 10,576 parts In-Stock

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$1.514

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$1.483

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$1.483

Eastek

USA . 9,000 parts In-Stock

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Kulean Microsystems

USA . 8,222 parts In-Stock

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TANS Electronics

Latvia . 6,008 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 3,329 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,273 parts In-Stock

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Problanco Electronics

Mexico . 1,964 parts In-Stock

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UHIMA Technologies

Türkiye . 979 parts In-Stock

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Continental Prestige Electronics

USA . 554 parts In-Stock

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$0.252

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$0.153

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$0.133

554

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$0.133

Overview

Discover the power of the NVR5124PLT1G by Onsemi - a high-quality P-Channel FET that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this transistor is designed for a wide range of applications, from automotive to industrial electronics. With its built-in diode and enhancement mode operation, this small outline package transistor delivers maximum power dissipation and efficient operation, ensuring optimal performance in any environment. Trust Onsemi's expertise and choose the NVR5124PLT1G for superior quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB.

Minimum DS Breakdown Voltage: 60 V

Can withstand high voltages, making it suitable for a variety of applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.47 W

Can handle moderate power levels, suitable for a range of applications.

Operating Mode: ENHANCEMENT MODE

Provides flexibility in circuit design and operation.

No. of Terminals: 3

Simple and compact design with a minimal number of terminals.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, suitable for various conditions.

Maximum Drain Current (ID): 1.1 A

Capable of handling high current levels for demanding applications.

Maximum Drain-Source On Resistance: 0.365 ohm

Low on-resistance allows for efficient power delivery and minimal power loss.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures during assembly processes.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures for soldering processes.

Reference Standard: AEC-Q101

Complies with automotive industry standards, suitable for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVR5124PLT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.365 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NVR5124PLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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