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NVR5198NLT1G

Onsemi

NVR5198NLT1G by Onsemi

NVR5198NLT1G by Onsemi is a single N-channel FET with max drain current of 2.2A and power dissipation of 1.5W. Ideal for applications requiring small outline package style, such as temperature-sensitive environments due to its max operating temp of 150°C.

Median Price

$0.203

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9,000 parts In-Stock

1+ parts

$0.446

100+ parts

$0.141

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$0.102

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9,000

$0.446

$0.141

$0.102

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Verical

USA . 26,250 parts In-Stock

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$0.268

10k+ parts

$0.236

26,250

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$0.236

Master Electronics

USA . 26,250 parts In-Stock

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$0.228

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$0.201

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$0.201

Flip Electronics (Authorized)

USA . 24,000 parts In-Stock

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DigiKey

USA . 14,326 parts In-Stock

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$0.128

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Chip1Stop

Japan . 6,000 parts In-Stock

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RS (Exports)

UK . 4,625 parts In-Stock

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$0.203

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$0.158

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$0.127

4,625

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$0.203

$0.158

$0.127

Element14

Singapore . 3,825 parts In-Stock

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$0.263

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3,825

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$0.166

Rochester

USA . 3,000 parts In-Stock

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$0.138

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$0.115

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$0.102

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Farnell

UK . 861 parts In-Stock

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$0.106

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$0.088

861

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.174

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100

$0.174

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Component Electronics Inc.

Canada . 3,000 parts In-Stock

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$0.380

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$0.290

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$0.250

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3,000

$0.380

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Digiode

USA . 59 parts In-Stock

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$0.418

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59

$0.418

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TME

Poland . 120 parts In-Stock

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$0.590

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$0.252

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$0.153

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$0.146

120

$0.590

$0.252

$0.153

$0.146

Maritex

Poland . 2,253 parts In-Stock

1+ parts

$0.855

100+ parts

$0.207

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$0.141

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$0.120

2,253

$0.855

$0.207

$0.141

$0.120

IBS Electronics

USA . 384,000 parts In-Stock

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$0.523

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$0.342

NAC Semi

USA . 66,000 parts In-Stock

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$0.380

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ComSIT Distribution GmbH

Germany . 65,250 parts In-Stock

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Semtec, LLC

USA . 53,941 parts In-Stock

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Flip Electronics

USA . 48,000 parts In-Stock

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Sensible Micro Corp

USA . 36,975 parts In-Stock

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Cyclops Electronics Ltd

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Quantum Digital Technology

USA . 24,000 parts In-Stock

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Vyrian

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Chip Stock

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 36,036 parts In-Stock

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$0.081

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Semicontronic

India . 35,865 parts In-Stock

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$0.081

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$0.079

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$0.079

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Corohmni

South Africa . 441 parts In-Stock

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Continental Prestige Electronics

USA . 6,772 parts In-Stock

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$0.174

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Argo Parts USA

USA . 4,606 parts In-Stock

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$0.168

4,606

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Netroflash

USA . 100 parts In-Stock

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$0.174

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Corphita

USA . 1,527 parts In-Stock

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$0.396

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1,527

$0.396

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.530

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$0.482

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$0.435

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350

$0.530

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$0.435

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Aztec Data Supply Inc.

USA . 1,660 parts In-Stock

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$0.550

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Perfect Parts

USA . 751,822 parts In-Stock

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Infinite Electronics LLP (Excess)

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Authorized Procurement Solutions

USA . 492,000 parts In-Stock

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RC Electronics

USA . 73,314 parts In-Stock

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Kepictronics

USA . 66,000 parts In-Stock

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Lixinc

USA . 19,115 parts In-Stock

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Formix International (Excess)

India . 12,216 parts In-Stock

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S.R.D Solutions

India . 8,000 parts In-Stock

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Kulean Microsystems

USA . 4,464 parts In-Stock

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SupplyDigital Components

Austria . 3,557 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,861 parts In-Stock

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Problanco Electronics

Mexico . 1,700 parts In-Stock

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TANS Electronics

Latvia . 471 parts In-Stock

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UHIMA Technologies

Türkiye . 62 parts In-Stock

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Overview

Discover the NVR5198NLT1G by Onsemi, a top-of-the-line Small Signal Field Effect Transistor (FET) that delivers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for their cutting-edge technology and superior quality products, this N-channel FET offers a single configuration with surface mount capabilities. Ideal for a wide range of applications, this transistor boasts a maximum drain current of 2.2 A and a maximum power dissipation of 1.5 W. Experience the value and benefits of the NVR5198NLT1G, providing customers with a competitive edge in their projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

This FET is specifically designed for N-channel applications, making it a versatile choice for a variety of projects.

Configuration: SINGLE

With a single configuration, this FET is easy to integrate into circuit designs and offers simplicity in setup.

Surface Mount: YES

The surface mount capability of this FET makes it ideal for compact, space-saving designs and allows for easy installation on PCBs.

Maximum Drain Current (Abs) (ID): 2.2 A

With a high maximum drain current, this FET can handle a significant amount of current flow, making it suitable for power applications.

Maximum Power Dissipation (Abs): 1.5 W

This FET is designed to efficiently dissipate power and maintain stable performance under high load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this FET offers a compact footprint, perfect for applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology in this FET ensures high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good contact and solderability, enhancing the reliability of the FET connection.

Maximum Drain-Source On Resistance: 0.205 ohm

With low drain-source on resistance, this FET offers efficient current flow and minimizes power loss during operation.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of this FET allows for reliable soldering and rework processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVR5198NLT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.205 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVR5198NLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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