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BSS138BKVL

Nexperia

BSS138BKVL by Nexperia

Nexperia's BSS138BKVL is a N-channel FET with 60V breakdown voltage and 1.6 ohm on-resistance, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor is surface mountable and complies with AEC-Q101 and IEC-60134 standards.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,990 parts In-Stock

1+ parts

$0.220

100+ parts

$0.084

1k+ parts

$0.054

10k+ parts

$0.041

8,990

$0.220

$0.084

$0.054

$0.041

Mouser Electronics

USA . 586 parts In-Stock

1+ parts

$0.270

100+ parts

$0.101

1k+ parts

$0.058

10k+ parts

$0.037

586

$0.270

$0.101

$0.058

$0.037

TTI

USA . 430,000 parts In-Stock

1+ parts

-

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$0.023

430,000

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$0.023

Chip1Stop

Japan . 20,000 parts In-Stock

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$0.029

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$0.029

Arrow

USA . 10,000 parts In-Stock

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$0.023

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$0.023

Verical

USA . 10,000 parts In-Stock

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$0.023

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$0.023

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.073

100+ parts

-

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100

$0.073

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TME

Poland . 50,000 parts In-Stock

1+ parts

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$0.033

50,000

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$0.033

NAC Semi

USA . 20,000 parts In-Stock

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$0.031

20,000

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$0.031

Vyrian

USA . 8,012 parts In-Stock

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VNN

France . 4,612 parts In-Stock

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Speed Components Ltd

Israel . 150 parts In-Stock

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Semicontronic

India . 85,161 parts In-Stock

1+ parts

$0.019

100+ parts

$0.019

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$0.018

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85,161

$0.019

$0.019

$0.018

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Ampacity Inc.

Singapore . 52,234 parts In-Stock

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$0.022

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$0.022

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AZTECH Wire

Italy . 6,028 parts In-Stock

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$0.040

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$0.040

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Continental Prestige Electronics

USA . 6,794 parts In-Stock

1+ parts

$0.073

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$0.071

6,794

$0.073

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$0.071

Argo Parts USA

USA . 777 parts In-Stock

1+ parts

$0.073

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-

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10k+ parts

$0.070

777

$0.073

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$0.070

Netroflash

USA . 500 parts In-Stock

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$0.073

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500

$0.073

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Corohmni

South Africa . 554 parts In-Stock

1+ parts

$0.076

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554

$0.076

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.078

100+ parts

$0.074

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$0.074

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40

$0.078

$0.074

$0.074

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Modulus Dynamics

Lithuania . 750 parts In-Stock

1+ parts

$0.081

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$0.080

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$0.078

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750

$0.081

$0.080

$0.078

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Aztec Data Supply Inc.

USA . 1,602 parts In-Stock

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$1.090

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$1.090

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Glotronic Ltd.

UK . 24,000 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Supply Digital

USA . 325 parts In-Stock

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325

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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$72.449

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$72.449

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$72.449

200

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$72.449

$72.449

$72.449

Overview

Discover the BSS138BKVL by Nexperia, a high-quality N-CHANNEL Small Signal Field Effect Transistor with a built-in diode, perfect for switching applications. With a minimum DS breakdown voltage of 60V and maximum drain current of 0.36A, this transistor offers reliable performance in a compact rectangular package. Trust Nexperia's expertise in semiconductor technology to deliver superior products that meet AEC-Q101 and IEC-60134 standards. Experience enhanced efficiency and precision with the BSS138BKVL, providing value and benefits that exceed expectations. Choose Nexperia for cutting-edge solutions that elevate your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and lower resistance, offering efficient performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier circuit design and protection against reverse current flow.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability makes installation and assembly easier, saving space and enabling higher component density on PCBs.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage ensures the transistor can handle higher voltages, enhancing its reliability and versatility in different circuit designs.

Package Shape: RECTANGULAR

Rectangular shape allows for compact design and easy placement on PCBs, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and allow for easy soldering during assembly, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control and efficiency in switching applications, contributing to overall performance improvement.

No. of Terminals: 3

Three terminals enable proper connection and functionality within a circuit, ensuring accurate signal transmission and control.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for higher density integration, ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers stable and reliable performance, contributing to the overall quality and longevity of the transistor.

Transistor Element Material: SILICON

Silicon material provides good electrical properties, ensuring optimal performance and reliability of the transistor in various operating conditions.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and solderability, ensuring a reliable connection and long-term performance of the transistor.

Maximum Drain Current (ID): 0.36 A

High maximum drain current rating allows the transistor to handle larger loads, making it suitable for applications requiring higher current levels.

Maximum Drain-Source On Resistance: 1.6 ohm

Low drain-source on resistance minimizes power loss and improves efficiency in switching applications, contributing to overall performance enhancement.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and layout, allowing for versatile integration in various electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

30-second maximum time at peak reflow temperature ensures proper soldering and assembly, contributing to the overall reliability of the product.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and good thermal performance, enhancing the overall durability and reliability of the product.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability, making the transistor a dependable choice for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138BKVL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.36 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138BKVL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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