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BSS138L

Onsemi

BSS138L by Onsemi

BSS138L by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max drain current of 0.2A. With surface mount capability and small outline package style, it offers efficient performance in various electronic circuits.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2 parts In-Stock

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$0.014

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2

$0.014

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$0.014

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Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.072

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$0.068

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$0.068

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100

$0.072

$0.068

$0.068

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Mouser Electronics

USA . 984,034 parts In-Stock

1+ parts

$0.180

100+ parts

$0.077

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$0.067

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$0.033

984,034

$0.180

$0.077

$0.067

$0.033

Arrow

USA . 5,792 parts In-Stock

1+ parts

$0.195

100+ parts

$0.085

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$0.061

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$0.035

5,792

$0.195

$0.085

$0.061

$0.035

DigiKey

USA . 1,523 parts In-Stock

1+ parts

$0.270

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$0.102

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$0.066

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1,523

$0.270

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Farnell

UK . 53,570 parts In-Stock

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$0.098

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$0.070

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Master Electronics

USA . 51,000 parts In-Stock

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Chip1Stop

Japan . 21,000 parts In-Stock

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EBV Elektronik

Germany . 15,000 parts In-Stock

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Verical

USA . 5,792 parts In-Stock

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Distrelec

Netherlands . 2,950 parts In-Stock

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Rochester

USA . 2,874 parts In-Stock

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RS (Exports)

UK . 700 parts In-Stock

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$0.165

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$0.116

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$0.074

700

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$0.074

Distributors (In-Stock)

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Digiode

USA . 2,618 parts In-Stock

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Maritex

Poland . 2 parts In-Stock

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$0.068

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$0.037

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$0.033

2

$0.068

$0.051

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$0.033

Nova Conductors

Japan . 45 parts In-Stock

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$0.071

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TME

Poland . 4,490 parts In-Stock

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$0.170

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$0.084

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$0.052

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4,490

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Chip Stock

USA . 615,000 parts In-Stock

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IBS Electronics

USA . 51,000 parts In-Stock

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Semtec, LLC

USA . 29,196 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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NAC Semi

USA . 27,000 parts In-Stock

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Flip Electronics

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PUI

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Cyclops Electronics Ltd

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Voyager Components

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Connector Distribution Corp

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Right Parts Inc.

USA . 1,355 parts In-Stock

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Elcom Components

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Prism Electronics

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France . 45 parts In-Stock

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Sweden . 8 parts In-Stock

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J2 Sourcing AB

Sweden . 1 parts In-Stock

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Semicontronic

India . 119,649 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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Corphita

USA . 2,450 parts In-Stock

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Component Stockers USA

USA . 493,425 parts In-Stock

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493,425

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$0.040

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Ampacity Inc.

Singapore . 120,056 parts In-Stock

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Argo Parts USA

USA . 1,051 parts In-Stock

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$0.068

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$0.066

1,051

$0.068

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$0.066

Modulus Dynamics

Lithuania . 14,324 parts In-Stock

1+ parts

$0.070

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$0.070

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$0.070

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Netroflash

USA . 100 parts In-Stock

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$0.071

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$0.067

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$0.066

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$0.071

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$0.067

$0.066

Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.072

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$0.068

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$0.068

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$0.072

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Aztec Data Supply Inc.

USA . 1,643 parts In-Stock

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$0.837

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Perfect Parts

USA . 799,552 parts In-Stock

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Glotronic Ltd.

UK . 43,200 parts In-Stock

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Metaverse IC Inc.

Canada . 40,000 parts In-Stock

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iodParts Technologies Inc.

India . 27,394 parts In-Stock

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Lixinc

USA . 19,397 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Kulean Microsystems

USA . 5,560 parts In-Stock

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Continental Prestige Electronics

USA . 5,030 parts In-Stock

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$0.084

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$0.057

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TANS Electronics

Latvia . 3,561 parts In-Stock

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Kepictronics

USA . 3,200 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,682 parts In-Stock

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SupplyDigital Components

Austria . 2,205 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Supply Digital

USA . 1,596 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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UHIMA Technologies

Türkiye . 787 parts In-Stock

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Robosynatics

Brazil . 20 parts In-Stock

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Lucentia Tech

USA . 20 parts In-Stock

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Overview

Unleash the power of innovation with the BSS138L by Onsemi, a top-of-the-line Small Signal Field Effect Transistor (FET) that guarantees superior quality and performance. Designed with precision and expertise, this N-CHANNEL transistor offers a multitude of applications in switching technology, making it a versatile and reliable choice for your electronic projects. With built-in diode configuration and a compact package style, this transistor delivers exceptional value, efficiency, and durability to meet all your needs. Upgrade to the BSS138L today and experience next-level functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds compared to P-channel transistors, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect against reverse voltage, enhancing the overall functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in electronic circuits.

Surface Mount: YES

The surface mount capability allows for easy integration onto PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 50 V

The high breakdown voltage of 50V ensures reliable operation and protection against voltage spikes in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures and operate efficiently in challenging environments.

Maximum Drain Current (ID): 0.2 A

The maximum drain current of 0.2A allows for handling moderate current levels, making it suitable for various circuit applications.

Maximum Drain-Source On Resistance: 10 ohm

The low on-resistance of 10 ohms minimizes power losses and improves efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 5 pF

The low feedback capacitance of 5pF reduces the risk of signal distortion and improves the overall performance of the transistor in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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