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IRLL110TRPBF

Vishay Intertechnology

IRLL110TRPBF by Vishay Intertechnology

Vishay Intertechnology's IRLL110TRPBF is a N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 12A IDM, and 0.76 ohm RDS(on). With a max power dissipation of 3.1W and operating temperature up to 150°C, it is ideal for high-performance electronic devices requiring efficient switching capabilities.

Median Price

$0.746

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1k+

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Conrad

Germany . 50 parts In-Stock

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$0.737

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$0.661

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Farnell

UK . 10,475 parts In-Stock

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$0.578

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Element14

Singapore . 12,317 parts In-Stock

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$0.801

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$0.692

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$0.668

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$0.660

12,317

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$0.692

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$0.660

Mouser Electronics

USA . 320 parts In-Stock

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$1.370

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$0.563

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$0.389

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320

$1.370

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Newark

USA . 3,087 parts In-Stock

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Adafruit Industries

USA . 1,000 parts In-Stock

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$1.981

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$1.803

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$1.624

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$1.981

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TTI Europe

Germany . 37,500 parts In-Stock

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Chip1Stop

Japan . 37,500 parts In-Stock

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Future Electronics

Canada . 20,000 parts In-Stock

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Arrow

USA . 12,500 parts In-Stock

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Verical

USA . 9,836 parts In-Stock

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$0.888

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9,836

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Bristol Electronics

USA . 5,408 parts In-Stock

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$0.675

100+ parts

$0.270

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$0.189

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$0.175

5,408

$0.675

$0.270

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$0.175

Nova Conductors

Japan . 51 parts In-Stock

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Component Electronics Inc.

Canada . 1,421 parts In-Stock

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Chip Stock

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IBS Electronics

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ComSIT Distribution GmbH

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Vyrian

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Pegasus Components GmbH

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LIBRA Elektronik GmbH

Germany . 8,332 parts In-Stock

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Component Sense

UK . 6,557 parts In-Stock

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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R&J Components

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Rutronik

Germany . 2,500 parts In-Stock

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Sensible Micro Corp

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Semi Source

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Flex Direct, LLC

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Schukat

Germany . 1,200 parts In-Stock

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NAC Semi

USA . 918 parts In-Stock

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Inventory MP

USA . 682 parts In-Stock

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Semtec, LLC

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Cyclops Electronics Ltd

UK . 500 parts In-Stock

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Prism Electronics

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Atlantic Semiconductor

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PC Components Company LLC

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Contempo Components LLC

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Sea View Technologies

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Tectiva GmbH

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Holdelec - ElecDif-Pro

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Semicontronic

India . 41,101 parts In-Stock

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Component Stockers USA

USA . 169,403 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,800 parts In-Stock

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Corohmni

South Africa . 145 parts In-Stock

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$0.701

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Argo Parts USA

USA . 4,417 parts In-Stock

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Continental Prestige Electronics

USA . 12,340 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.981

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$1.803

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$1.624

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Perfect Parts

USA . 209,346 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Robosynatics

Brazil . 24,721 parts In-Stock

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$0.934

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$0.915

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$0.915

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$0.915

Lucentia Tech

USA . 24,721 parts In-Stock

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$0.934

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$0.915

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$0.915

Kepictronics

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 4,147 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$1.186

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$1.150

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$1.125

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$1.125

Allen Electronics Distributors

USA . 1,590 parts In-Stock

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$0.921

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S.R.D Solutions

India . 1,100 parts In-Stock

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Alle Elektronik GmbH

Germany . 784 parts In-Stock

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GreenTree Electronics

Israel . 500 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 413 parts In-Stock

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Overview

Discover the power of the Vishay Intertechnology IRLL110TRPBF Small Signal Field Effect Transistor (FET) - a game changer in switching applications. Crafted with precision and reliability in mind, this N-CHANNEL FET boasts a built-in diode for seamless performance. Perfectly suited for enhancement mode operation, it offers a maximum pulsing drain current of 12A and an impressive avalanche energy rating of 50mJ. From its high-quality construction to its efficient functionality, this transistor is a must-have for your electronic projects. Elevate your designs with the IRLL110TRPBF and experience next-level performance like never before.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type:

N-CHANNEL - Offers improved performance and efficiency for amplifying or switching signals.

Configuration:

SINGLE WITH BUILT-IN DIODE - Streamlines the design and wiring process, enhancing overall functionality.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds and efficient power management.

Surface Mount:

YES - Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage:

100 V - Ensures reliable operation under high voltage conditions, expanding the range of possible applications.

Package Shape:

RECTANGULAR - Provides a compact form factor for efficient circuit board layout and space-saving design.

Terminal Form:

GULL WING - Facilitates easy soldering and secure connection to the circuit board.

Operating Mode:

ENHANCEMENT MODE - Offers enhanced control over the transistor's operation for improved performance.

Maximum Pulsed Drain Current (IDM):

12 A - Handles high current spikes effectively, making it suitable for demanding applications.

Avalanche Energy Rating (EAS):

50 mJ - Provides protection against voltage spikes, ensuring reliable operation in harsh conditions.

Maximum Drain Current (Abs) (ID):

1.5 A - Capable of handling moderate current loads for a wide range of applications.

No. of Terminals:

4 - Provides multiple connection points for versatile circuit configurations.

Maximum Power Dissipation (Abs):

3.1 W - Can dissipate heat effectively, maintaining stable performance under high loads.

Package Style (Meter):

SMALL OUTLINE - Offers a compact design for space-constrained applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides high efficiency and reliability for various electronic circuits.

Maximum Operating Temperature:

150 °C - Can withstand high operating temperatures, suitable for industrial and automotive applications.

Transistor Element Material:

SILICON - Offers reliable performance and durability, ensuring long service life.

Minimum Operating Temperature:

55 °C - Functions effectively in low-temperature environments, making it versatile for various climates.

Terminal Finish:

Matte Tin (Sn) - Provides a corrosion-resistant finish for long-term reliability in various operating conditions.

Maximum Drain-Source On Resistance:

0.76 ohm - Low on-resistance ensures efficient power transfer and minimal heat dissipation.

Terminal Position:

DUAL - Allows for flexible mounting and connection options in different circuit layouts.

Case Connection:

DRAIN - Simplifies circuit design and layout, ensuring proper connection to the drain terminal.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering and reflowing processes without damaging the transistor.

Peak Reflow Temperature °C:

260 - Withstands high reflow temperatures, suitable for lead-free soldering processes.

Maximum Feedback Capacitance (Crss):

15 pF - Low feedback capacitance improves stability and performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRLL110TRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

50 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.76 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

12 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLL110TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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