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BSS123_R1_00001

Panjit International

BSS123_R1_00001 by Panjit International

Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.

Median Price

$0.045

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1k+

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Adafruit Industries

USA . 20 parts In-Stock

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$0.047

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20

$0.047

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$0.045

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DigiKey

USA . 5,568 parts In-Stock

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$0.200

100+ parts

$0.075

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$0.048

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5,568

$0.200

$0.075

$0.048

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Mouser Electronics

USA . 25 parts In-Stock

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$0.200

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$0.075

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$0.048

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$0.028

25

$0.200

$0.075

$0.048

$0.028

TTI Europe

Germany . 12,000 parts In-Stock

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$0.032

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$0.032

Verical

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$0.043

3,097

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.042

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$0.037

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$0.029

3,000

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Nova Conductors

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450

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Ozdisan Elektronik

Türkiye . 2,510 parts In-Stock

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$0.054

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Maritex

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$0.118

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$0.027

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TME

Poland . 3,097 parts In-Stock

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$0.170

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$0.078

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$0.040

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$0.031

3,097

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$0.031

Vyrian

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Chip Stock

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VNN

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Aranea Global

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Continental Prestige Electronics

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Argo Parts USA

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Advanced Electronics

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20

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Aztec Data Supply Inc.

USA . 288 parts In-Stock

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$0.648

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288

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Formix International (Excess)

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GreenTree Electronics

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Perfect Parts

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Infinite Electronics LLP (Excess)

. 3,150 parts In-Stock

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Overview

Unleash the power of innovation with the BSS123_R1_00001 by Panjit International - a cutting-edge Small Signal Field Effect Transistor that revolutionizes the world of switching applications. Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled performance and reliability. Its sleek design and advanced technology make it a top choice for engineers and hobbyists alike. Experience seamless operation and enhanced efficiency with the BSS123_R1_00001, the ultimate solution for your electronic projects. Elevate your creations to new heights with this exceptional component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for applications requiring portability and long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher switching speeds compared to P-channel, making this transistor a good choice for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and allows for more efficient switching, making this transistor a cost-effective option for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it suitable for a wide range of electronic devices.

Surface Mount: YES

The surface-mount feature allows for easy and quick installation on printed circuit boards, saving space and reducing assembly time in compact electronic devices.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100 V, this transistor can handle high voltage fluctuations and surges, making it suitable for industrial and automotive applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on the PCB and easy integration into compact electronic devices, optimizing space utilization.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical support and ease of soldering, ensuring reliable connections and stable performance in demanding environments.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control of the transistor's conductivity, enabling efficient switching and low power consumption in various applications.

No. of Terminals: 3

With three terminals, this transistor offers simplified circuit connections and easier integration into electronic systems, making it a versatile option for different designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS123_R1_00001 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Panjit International

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS123_R1_00001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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