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DMP6023LFG-7

Diodes Incorporated

DMP6023LFG-7 by Diodes Incorporated

DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.

Median Price

$0.367

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

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$0.309

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1

$0.309

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Mouser Electronics

USA . 14,451 parts In-Stock

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$1.580

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$0.781

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14,451

$1.580

$0.781

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Farnell

UK . 9,745 parts In-Stock

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$0.518

1k+ parts

$0.497

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9,745

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$0.518

$0.497

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Verical

USA . 4,000 parts In-Stock

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$0.309

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$0.309

DigiKey

USA . 23 parts In-Stock

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$0.367

Distributors (In-Stock)

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Nova Conductors

Japan . 37 parts In-Stock

1+ parts

$0.496

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37

$0.496

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IBS Electronics

USA . 104,000 parts In-Stock

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$0.638

104,000

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$0.638

Vyrian

USA . 86,321 parts In-Stock

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86,321

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NAC Semi

USA . 76,000 parts In-Stock

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$0.508

76,000

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$0.508

Component Sense

UK . 38,260 parts In-Stock

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38,260

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Chip Stock

USA . 19,500 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 98,056 parts In-Stock

1+ parts

$0.212

100+ parts

$0.207

1k+ parts

$0.206

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98,056

$0.212

$0.207

$0.206

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Ampacity Inc.

Singapore . 77,407 parts In-Stock

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$0.212

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77,407

$0.212

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.486

100+ parts

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$0.467

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500

$0.486

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$0.467

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Argo Parts USA

USA . 45 parts In-Stock

1+ parts

$0.496

100+ parts

-

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$0.481

45

$0.496

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$0.481

Modulus Dynamics

Lithuania . 21,284 parts In-Stock

1+ parts

$0.605

100+ parts

$0.605

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$0.605

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21,284

$0.605

$0.605

$0.605

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Aztec Data Supply Inc.

USA . 3,158 parts In-Stock

1+ parts

$0.690

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3,158

$0.690

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Corohmni

South Africa . 765 parts In-Stock

1+ parts

$1.682

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765

$1.682

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.930

100+ parts

$1.756

1k+ parts

$1.583

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2,500

$1.930

$1.756

$1.583

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GreenTree Electronics

Israel . 160,000 parts In-Stock

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RC Electronics

USA . 88,659 parts In-Stock

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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Lixinc

USA . 11,441 parts In-Stock

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Robosynatics

Brazil . 10,868 parts In-Stock

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Lucentia Tech

USA . 10,868 parts In-Stock

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$1.165

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$1.141

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$1.141

10,868

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$1.141

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,773 parts In-Stock

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Perfect Parts

USA . 6,824 parts In-Stock

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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3,200

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Continental Prestige Electronics

USA . 1,956 parts In-Stock

1+ parts

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100+ parts

$0.491

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$0.296

10k+ parts

$0.274

1,956

-

$0.491

$0.296

$0.274

Overview

Elevate your electronic designs with the DMP6023LFG-7 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors (FET) like no other. This P-CHANNEL transistor with a built-in diode is perfect for switching applications, offering a maximum drain current of 7.7 A and a low drain-source on resistance of 0.025 ohm. With its small outline package and matte tin terminal finish, this transistor provides enhanced performance and reliability. Trust Diodes Incorporated to bring value and innovation to your projects with the DMP6023LFG-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower on-resistance and can handle higher current compared to N-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency in certain applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation when turning on or off.

Minimum DS Breakdown Voltage: 60 V

With a breakdown voltage of 60V, this transistor can handle higher voltages without damage.

Package Shape: SQUARE

The square package shape allows for easier mounting and better utilization of space on the PCB.

Terminal Form: NO LEAD

No-lead terminals simplify soldering and improve thermal performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a threshold voltage to turn on, providing better control over the switching operation.

No. of Terminals: 5

Having 5 terminals allows for more versatile connections and configurations in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package is space-saving and suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability in various applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency in electronic devices.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term reliability.

Maximum Drain Current (ID): 7.7 A

With a maximum drain current of 7.7A, this transistor can handle high-power applications.

Maximum Drain-Source On Resistance: 0.025 ohm

Low drain-source on resistance of 0.025 ohm ensures minimal power loss and high efficiency in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connections.

Case Connection: DRAIN

Drain connection offers easy heat dissipation and improved thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures complete soldering and good mechanical bond.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-reliability performance in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP6023LFG-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

7.7 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP6023LFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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