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DMP6110SFDF-13

Diodes Incorporated

DMP6110SFDF-13 by Diodes Incorporated

DMP6110SFDF-13 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage, 3.5A ID, and 0.11 ohm RDS(on). Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14 parts In-Stock

1+ parts

$0.870

100+ parts

$0.352

1k+ parts

$0.240

10k+ parts

$0.200

14

$0.870

$0.352

$0.240

$0.200

Verical

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.147

70,000

-

-

-

$0.147

RS (Exports)

UK . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

30,000

-

-

-

$0.118

Future Electronics

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.400

10,000

-

-

-

$0.400

Farnell

UK . 9,610 parts In-Stock

1+ parts

-

100+ parts

$0.163

1k+ parts

$0.107

10k+ parts

$0.100

9,610

-

$0.163

$0.107

$0.100

Element14

Singapore . 9,610 parts In-Stock

1+ parts

-

100+ parts

$0.340

1k+ parts

$0.263

10k+ parts

$0.219

9,610

-

$0.340

$0.263

$0.219

DigiKey

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.173

3

-

-

-

$0.173

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$0.188

100+ parts

-

1k+ parts

-

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19

$0.188

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NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.800

20,000

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$0.800

Vyrian

USA . 7,165 parts In-Stock

1+ parts

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7,165

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 7,104 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

10k+ parts

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7,104

$0.111

-

-

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Continental Prestige Electronics

USA . 5,252 parts In-Stock

1+ parts

$0.188

100+ parts

-

1k+ parts

-

10k+ parts

$0.184

5,252

$0.188

-

-

$0.184

Argo Parts USA

USA . 2,603 parts In-Stock

1+ parts

$0.188

100+ parts

-

1k+ parts

-

10k+ parts

$0.182

2,603

$0.188

-

-

$0.182

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.188

100+ parts

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100

$0.188

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Corohmni

South Africa . 103 parts In-Stock

1+ parts

$0.197

100+ parts

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103

$0.197

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.479

100+ parts

$0.436

1k+ parts

$0.393

10k+ parts

-

10

$0.479

$0.436

$0.393

-

Eastek

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Unleash the power of cutting-edge technology with the DMP6110SFDF-13 by Diodes Incorporated. This P-Channel small signal field effect transistor is a game-changer in the world of switching applications. With a maximum drain current of 3.5 A and a minimum DS breakdown voltage of 60 V, this transistor operates in enhancement mode to deliver optimal performance. The square package shape and no-lead terminal form make for easy installation, while the nickel palladium gold terminal finish ensures long-lasting durability. Trust Diodes Incorporated to provide top-notch quality and reliability in every product, making the DMP6110SFDF-13 the ultimate choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are needed, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuits requiring a built-in diode, simplifying the design and saving space on the PCB.

Transistor Application: SWITCHING

Optimized for switching applications, providing efficient and reliable performance when handling different voltage levels.

Surface Mount: YES

Easily mountable on the PCB, saving space and making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltage levels without breakdown, making it suitable for use in various applications.

Package Shape: SQUARE

Uniform shape for easy placement and mounting on the PCB, ensuring a neat and organized layout.

Operating Mode: ENHANCEMENT MODE

Provides better control over the transistor's conductivity, allowing for enhanced performance in switching applications.

No. of Terminals: 6

Offers multiple connection points for flexibility in circuit design, allowing for a wide range of configurations.

Package Style (Meter): SMALL OUTLINE

Compact design for efficient use of space on the PCB, ideal for small electronic devices with limited room.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance with low power consumption, making it energy-efficient and suitable for battery-operated devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, ensuring reliability in various operating conditions.

Transistor Element Material: SILICON

Silicon material offers stable and consistent performance, making the transistor reliable for long-term use.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme cold temperatures, making it suitable for a wide range of environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring long-lasting performance and reliability.

Maximum Drain Current (ID): 3.5 A

Capable of handling high currents, making it versatile for various applications that require high power output.

Maximum Drain-Source On Resistance: 0.11 ohm

Low on-resistance minimizes power loss and improves efficiency, making the transistor suitable for high-performance applications.

Terminal Position: DUAL

Allows for easy and flexible connection options, enabling versatile circuit designs and configurations.

Case Connection: DRAIN

Specific connection point for the drain terminal, ensuring proper circuit operation and functionality.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified amount of time, ensuring proper soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during soldering processes, ensuring reliable connections on the PCB.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP6110SFDF-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP6110SFDF-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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