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NTS2101PT1G

Onsemi

NTS2101PT1G by Onsemi

NTS2101PT1G by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage, 3.7A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin terminal finish.

Median Price

$0.152

Lifecycle Status

Suppliers In-Stock

41

In-Stock Inventory

1k+

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Newark

USA . 17 parts In-Stock

1+ parts

$0.482

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$0.235

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$0.175

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Mouser Electronics

USA . 20,410 parts In-Stock

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$0.227

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$0.171

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$0.580

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DigiKey

USA . 410 parts In-Stock

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$0.580

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$0.227

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410

$0.580

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Flip Electronics (Authorized)

USA . 180,000 parts In-Stock

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Verical

USA . 116,823 parts In-Stock

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Rochester

USA . 116,823 parts In-Stock

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Future Electronics

Canada . 18,000 parts In-Stock

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Avnet

USA . 18,000 parts In-Stock

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Element14

Singapore . 16,850 parts In-Stock

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Farnell

UK . 15,170 parts In-Stock

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Arrow

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 8,971 parts In-Stock

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Digiode

USA . 1,897 parts In-Stock

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$0.089

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Maritex

Poland . 3,028 parts In-Stock

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TME

Poland . 49 parts In-Stock

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49

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Nova Conductors

Japan . 16 parts In-Stock

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Flip Electronics

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ComSIT Distribution GmbH

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J2 Sourcing AB

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Semtec, LLC

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ECAB

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Inventory MP

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Atlantic Semiconductor

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Italy . 740 parts In-Stock

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Prism Electronics

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NPI Materials, Inc.

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Semicontronic

India . 58,865 parts In-Stock

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Ampacity Inc.

Singapore . 40,933 parts In-Stock

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Corohmni

South Africa . 491 parts In-Stock

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Corphita

USA . 573 parts In-Stock

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Argo Parts USA

USA . 2,720 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,105 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$1.000

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$0.980

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Modulus Dynamics

Lithuania . 24,000 parts In-Stock

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$1.127

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$1.127

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$1.127

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$1.127

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.256

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$1.193

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$1.193

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$1.256

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$1.193

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Perfect Parts

USA . 695,289 parts In-Stock

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GreenTree Electronics

Israel . 132,000 parts In-Stock

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Eastek

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S.R.D Solutions

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RC Electronics

USA . 90,607 parts In-Stock

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Metaverse IC Inc.

Canada . 88,000 parts In-Stock

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Singapore . 80,000 parts In-Stock

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Glotronic Ltd.

UK . 45,600 parts In-Stock

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iodParts Technologies Inc.

India . 35,840 parts In-Stock

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Continental Prestige Electronics

USA . 30,135 parts In-Stock

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$0.166

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QUARKTWIN TECHNOLOGY LTD

USA . 27,157 parts In-Stock

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SupplyDigital Components

Austria . 6,586 parts In-Stock

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Kepictronics

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Lixinc

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UK . 3,805 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,910 parts In-Stock

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TANS Electronics

Latvia . 1,538 parts In-Stock

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Allen Electronics Distributors

USA . 1,250 parts In-Stock

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UHIMA Technologies

Türkiye . 164 parts In-Stock

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Overview

Looking for a high-quality Small Signal Field Effect Transistor? Look no further than the NTS2101PT1G by Onsemi! With its P-Channel configuration and built-in diode, this transistor is perfect for switching applications. Its compact design and excellent performance make it ideal for a wide range of projects. Trust in Onsemi's reputation for reliability and innovation to deliver top-of-the-line products. Experience the value and benefits that the NTS2101PT1G offers, from enhanced functionality to increased efficiency. Upgrade your electronics today with this exceptional transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance, making them suitable for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides reverse polarity protection and enables more efficient switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable operation.

Surface Mount: YES

Suitable for surface mount applications, saving space and making assembly easier.

Minimum DS Breakdown Voltage: 8 V

With a minimum breakdown voltage of 8V, this transistor can handle higher voltage levels without failing.

Maximum Drain Current (Abs) (ID): 3.7 A

High maximum drain current rating allows the transistor to handle larger loads effectively.

Maximum Power Dissipation (Abs): 0.96 W

Efficient power dissipation ensures the transistor can operate within its specified limits without overheating.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, providing reliability in various environments.

Maximum Drain-Source On Resistance: 0.1 ohm

Low on-resistance helps in reducing power loss and improving efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS2101PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

1.4 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS2101PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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