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DMP610DL-7

Diodes Incorporated

DMP610DL-7 by Diodes Incorporated

DMP610DL-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp range, it offers reliable performance in small outline packages.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,301 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.052

10k+ parts

-

5,301

$0.220

$0.082

$0.052

-

Mouser Electronics

USA . 463 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.062

10k+ parts

$0.038

463

$0.260

$0.098

$0.062

$0.038

Newark

USA . 1,646 parts In-Stock

1+ parts

$0.267

100+ parts

$0.098

1k+ parts

$0.063

10k+ parts

-

1,646

$0.267

$0.098

$0.063

-

Future Electronics

Canada . 72,000 parts In-Stock

1+ parts

-

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-

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$0.021

72,000

-

-

-

$0.021

Arrow

USA . 15,000 parts In-Stock

1+ parts

-

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$0.030

15,000

-

-

-

$0.030

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.030

15,000

-

-

-

$0.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.048

-

-

-

TME

Poland . 6 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.047

10k+ parts

$0.034

6

$0.210

$0.079

$0.047

$0.034

IBS Electronics

USA . 501,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

501,000

-

-

-

$0.061

Vyrian

USA . 106,252 parts In-Stock

1+ parts

-

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106,252

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NAC Semi

USA . 57,000 parts In-Stock

1+ parts

-

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$0.035

57,000

-

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$0.035

Chip Stock

USA . 46,000 parts In-Stock

1+ parts

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46,000

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ComSIT Distribution GmbH

Germany . 3 parts In-Stock

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3

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Distributors (Availability)

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Semicontronic

India . 132,467 parts In-Stock

1+ parts

$0.018

100+ parts

$0.018

1k+ parts

$0.017

10k+ parts

-

132,467

$0.018

$0.018

$0.017

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Ampacity Inc.

Singapore . 113,718 parts In-Stock

1+ parts

$0.018

100+ parts

-

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113,718

$0.018

-

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Continental Prestige Electronics

USA . 5,418 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

$0.045

5,418

$0.046

-

-

$0.045

Argo Parts USA

USA . 3,367 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

3,367

$0.046

-

-

$0.044

Modulus Dynamics

Lithuania . 17,976 parts In-Stock

1+ parts

$0.048

100+ parts

$0.048

1k+ parts

$0.048

10k+ parts

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17,976

$0.048

$0.048

$0.048

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Corohmni

South Africa . 158 parts In-Stock

1+ parts

$0.048

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158

$0.048

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Aztec Data Supply Inc.

USA . 74 parts In-Stock

1+ parts

$1.950

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74

$1.950

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Lixinc

USA . 19,478 parts In-Stock

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19,478

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Kepictronics

USA . 6,280 parts In-Stock

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6,280

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Eastek

USA . 6,000 parts In-Stock

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6,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.047

1k+ parts

$0.046

10k+ parts

$0.045

100

-

$0.047

$0.046

$0.045

Overview

Unlock the power of cutting-edge technology with the DMP610DL-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you a high-quality P-Channel Field Effect Transistor that is perfect for switching applications. With a minimum DS Breakdown Voltage of 60V and maximum Drain Current of 0.18A, this transistor offers unparalleled performance and reliability. Whether you're a hobbyist or a professional, the DMP610DL-7 provides value, efficiency, and versatility that will take your projects to the next level. Experience the difference with Diodes Incorporated today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components, making the product durable and long-lasting.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower ON-state resistance, which can help to reduce power losses and improve efficiency in switching applications.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage allows for reliable operation in high voltage applications, providing added safety and stability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that the transistor can withstand elevated temperatures, making it suitable for a wide range of environments.

Maximum Power Dissipation Ambient: 0.5 W

With a maximum power dissipation of 0.5 W, this FET can handle moderate power levels without overheating, ensuring reliable performance.

Maximum Drain Current (ID): 0.18 A

The maximum drain current rating of 0.18 A indicates the amount of current the transistor can safely handle, making it suitable for low to moderate current applications.

Maximum Drain-Source On Resistance: 10 ohm

The low ON-resistance of 10 ohms results in reduced power losses and improved efficiency during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP610DL-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW CAPACITANCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.8 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.5 W

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP610DL-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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