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DMP6023LFGQ-7

Diodes Incorporated

DMP6023LFGQ-7 by Diodes Incorporated

DMP6023LFGQ-7 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C to 150°C operating range.

Median Price

$0.518

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Mouser Electronics

USA . 21,067 parts In-Stock

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$1.390

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$0.579

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$0.410

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$0.372

21,067

$1.390

$0.579

$0.410

$0.372

Newark

USA . 1,227 parts In-Stock

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$1.430

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$0.595

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$0.421

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$1.430

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DigiKey

USA . 11,997 parts In-Stock

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$0.314

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Future Electronics

Canada . 2,000 parts In-Stock

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$0.780

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Arrow

USA . 2,000 parts In-Stock

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$0.277

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Verical

USA . 2,000 parts In-Stock

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Element14

Singapore . 1,594 parts In-Stock

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$0.678

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$0.477

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1,594

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Farnell

UK . 365 parts In-Stock

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$0.359

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$0.279

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$0.258

365

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Distributors (In-Stock)

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Nova Conductors

Japan . 77 parts In-Stock

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$0.331

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77

$0.331

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Greenchips

USA . 870 parts In-Stock

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$0.339

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$0.323

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$0.307

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$0.277

870

$0.339

$0.323

$0.307

$0.277

IBS Electronics

USA . 506,000 parts In-Stock

1+ parts

$0.694

100+ parts

$0.631

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$0.757

506,000

$0.694

$0.631

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$0.757

NAC Semi

USA . 78,000 parts In-Stock

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

USA . 35,908 parts In-Stock

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Bristol Electronics

USA . 2,157 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 870 parts In-Stock

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Tectiva GmbH

Germany . 233 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 35,971 parts In-Stock

1+ parts

$0.179

100+ parts

$0.175

1k+ parts

$0.174

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35,971

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$0.175

$0.174

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Continental Prestige Electronics

USA . 6,582 parts In-Stock

1+ parts

$0.331

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$0.324

6,582

$0.331

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Argo Parts USA

USA . 4,232 parts In-Stock

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$0.331

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$0.321

4,232

$0.331

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$0.321

Netroflash

USA . 100 parts In-Stock

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$0.331

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$0.324

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Corohmni

South Africa . 896 parts In-Stock

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$0.339

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896

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.349

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$0.332

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$0.332

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200

$0.349

$0.332

$0.332

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Ampacity Inc.

Singapore . 43,460 parts In-Stock

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$0.390

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Aztec Data Supply Inc.

USA . 5,477 parts In-Stock

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$0.710

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Infinite Electronics LLP (Excess)

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RC Electronics

USA . 52,940 parts In-Stock

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Perfect Parts

USA . 42,560 parts In-Stock

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Epart123

USA . 30,000 parts In-Stock

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$0.530

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Lixinc

USA . 11,207 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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350

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Overview

Unleash the power of cutting-edge technology with the DMP6023LFGQ-7 by Diodes Incorporated. Crafted with precision and expertise, this P-CHANNEL small signal Field Effect Transistor offers unparalleled performance in switching applications. With a maximum drain current of 7.7A and a minimum DS breakdown voltage of 60V, this transistor ensures reliable operation even in the most demanding environments. Say goodbye to compromise and experience superior quality and efficiency with the DMP6023LFGQ-7. Elevate your projects to new heights with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components.

Polarity or Channel Type: P-CHANNEL

Suitable for certain circuit configurations and applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode within the transistor.

Transistor Application: SWITCHING

Ideal for applications where fast switching is required.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards.

Minimum DS Breakdown Voltage: 60 V

Suitable for applications requiring high voltage tolerance.

Package Shape: SQUARE

Helps in efficient layout and placement on a circuit board.

Terminal Form: NO LEAD

Eliminates the need for additional lead components, reducing overall size.

Operating Mode: ENHANCEMENT MODE

Provides flexibility in controlling the transistor's conductance.

No. of Terminals: 5

Offers multiple connection points for versatile circuit integration.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability in a compact form factor.

Maximum Operating Temperature: 150 °C

Suitable for applications requiring high temperature tolerance.

Transistor Element Material: SILICON

Known for its excellent electrical properties and durability.

Minimum Operating Temperature: -55 °C

Allows for operation in extreme temperature conditions.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and corrosion resistance.

Maximum Drain Current (ID): 7.7 A

Capable of handling high current loads in a circuit.

Maximum Drain-Source On Resistance: 0.025 ohm

Offers low resistance for efficient power transfer.

Terminal Position: DUAL

Allows for flexible connection options in a circuit.

Case Connection: DRAIN

Simplifies circuit layout and connection design.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflowing of the component.

Peak Reflow Temperature °C: 260

Suitable for high-temperature reflow soldering processes.

Reference Standard: AEC-Q101

Complies with automotive industry quality standards.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP6023LFGQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

7.7 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP6023LFGQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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