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NX3008NBKS,115

NXP Semiconductors

NX3008NBKS,115 by NXP Semiconductors

NXP Semiconductors' NX3008NBKS,115 is a N-CHANNEL FET for SWITCHING applications. With 30V DS Breakdown Voltage and 0.35A Drain Current, it operates in ENHANCEMENT MODE. Featuring GULL WING terminals and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline packages in automotive electronics.

Median Price

$0.109

Lifecycle Status

Suppliers In-Stock

29

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1k+

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DigiKey

USA . 497,034 parts In-Stock

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$0.370

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Mouser Electronics

USA . 3,087 parts In-Stock

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Newark

USA . 44,262 parts In-Stock

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TTI

USA . 135,000 parts In-Stock

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Avnet

USA . 105,000 parts In-Stock

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Farnell

UK . 91,408 parts In-Stock

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Element14

Singapore . 44,136 parts In-Stock

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RS (Exports)

UK . 20,800 parts In-Stock

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Rochester

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 8,455 parts In-Stock

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Future Electronics

Canada . 6,000 parts In-Stock

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EBV Elektronik

Germany . 6,000 parts In-Stock

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Arrow

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Verical

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Digiode

USA . 633 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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TME

Poland . 115 parts In-Stock

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$0.078

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$0.075

115

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Maritex

Poland . 4,644 parts In-Stock

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$1.129

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$0.264

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$0.180

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IBS Electronics

USA . 87,000 parts In-Stock

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Chip Stock

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NexGen Digital

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Inventory MP

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Bristol Electronics

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Global Solutions Electronics Company

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Semicontronic

India . 627,912 parts In-Stock

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Ampacity Inc.

Singapore . 316,488 parts In-Stock

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Corphita

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Argo Parts USA

USA . 3,837 parts In-Stock

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AZTECH Wire

Italy . 10,178 parts In-Stock

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Continental Prestige Electronics

USA . 120,679 parts In-Stock

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Modulus Dynamics

Lithuania . 25,107 parts In-Stock

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Aztec Data Supply Inc.

USA . 174 parts In-Stock

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

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$1.659

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$1.495

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Corohmni

South Africa . 1,047 parts In-Stock

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Glotronic Ltd.

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Perfect Parts

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Eastek

USA . 60,000 parts In-Stock

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GreenTree Electronics

Israel . 51,000 parts In-Stock

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Authorized Procurement Solutions

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Allen Electronics Distributors

USA . 22,400 parts In-Stock

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Robosynatics

Brazil . 21,206 parts In-Stock

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Lucentia Tech

USA . 21,206 parts In-Stock

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iodParts Technologies Inc.

India . 13,425 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Supply Digital

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A-Z Elektronik GmbH

Germany . 1,780 parts In-Stock

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UNI Independent Distributors

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Overview

Elevate your electronics with the NX3008NBKS,115 by NXP Semiconductors. Crafted with precision and quality, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With its N-CHANNEL configuration and built-in diode, this transistor provides seamless functionality. Its compact design, high power dissipation, and wide operating temperature range make it a versatile choice for various projects. Upgrade your devices today with the NX3008NBKS,115 and experience the superior quality and reliability that only NXP Semiconductors can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and faster switching speeds, making them suitable for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration provides versatility and flexibility in circuit design, allowing for different connection options.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on/off cycles efficiently.

Surface Mount: YES

Being surface mountable, this transistor is easy to install on circuit boards and saves space in compact designs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can safely operate in circuits with higher voltages.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into various electronic devices and circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode offers better control over the transistor's conductivity, improving overall performance.

No. of Elements: 2

Dual elements provide redundancy and can be configured in different ways to meet specific circuit requirements.

Maximum Drain Current (Abs) (ID): 0.35 A

With a maximum drain current of 0.35A, this transistor can handle moderate power loads effectively.

No. of Terminals: 6

The six terminals offer multiple connection points, allowing for greater flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.445 W

The high maximum power dissipation rating ensures the transistor can handle heat dissipation effectively, increasing its durability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and durability, ensuring the transistor's longevity.

Minimum Operating Temperature: -50 °C

The wide temperature range allows the transistor to operate in extreme cold conditions, making it versatile for different environments.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and stable electrical connections, ensuring long-term reliability.

Maximum Drain-Source On Resistance: 1.4 ohm

The low drain-source on resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit board layout and allow for different mounting orientations.

Maximum Time At Peak Reflow Temperature (s): 30

The specified time at peak reflow temperature ensures proper soldering and assembly during manufacturing.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliability during assembly processes.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability, making this transistor a trusted choice for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX3008NBKS,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.35 A

Maximum Drain Current (ID):

.35 A

Maximum Drain-Source On Resistance:

1.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NX3008NBKS,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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