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NX3008CBKS

NXP Semiconductors

NX3008CBKS by NXP Semiconductors

NXP Semiconductors' NX3008CBKS is a Small Signal FET with N/P-Channel, 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 1.4Ω max RDS(on), and 0.35A max ID. It comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$1.708

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

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Nova Conductors

Japan . 50 parts In-Stock

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Bristol Electronics

USA . 7,700 parts In-Stock

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Dan-Mar Components

USA . 7,700 parts In-Stock

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Chip Stock

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Vyrian

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SPM Sales

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Greenchips

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Digiode

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Electronic Treasures

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Anansix

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 324 parts In-Stock

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$0.050

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Aztec Data Supply Inc.

USA . 23,132 parts In-Stock

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Advanced Electronics

New Zealand . 331 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Semicontronic

India . 1,183 parts In-Stock

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$14.050

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$13.699

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$13.628

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AZTECH Wire

Italy . 7,141 parts In-Stock

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One Stop Electronics

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RC Electronics

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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UNI Independent Distributors

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Corphita

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Continental Prestige Electronics

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Futuretech Components

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Lixinc

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Argo Parts USA

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Supply Digital

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Kepictronics

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Bastille Electronics

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Overview

Elevate your electronic projects with the NX3008CBKS from NXP Semiconductors, a high-quality Small Signal Field Effect Transistor that offers exceptional performance and reliability. With N-CHANNEL AND P-CHANNEL configuration and built-in diode, this transistor is perfect for switching applications. Its compact size, efficient design, and pure tin terminal finish make it ideal for various projects. Trust NXP Semiconductors to deliver top-notch technology and enhance your creations with the NX3008CBKS.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility in circuit design by supporting both N-channel and P-channel configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for more complex circuit designs and functionality with built-in diode.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Facilitates easy and efficient integration onto circuit boards during manufacturing.

Minimum DS Breakdown Voltage: 30 V

Suitable for applications requiring higher voltage handling capabilities.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts.

Terminal Form: GULL WING

Ease of soldering and secure connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Provides better control and efficiency in switching operations.

No. of Elements: 2

Enables multiple functions or configurations within a single component.

No. of Terminals: 6

Sufficient connectivity options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Space-saving design ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers good performance and reliability in various operating conditions.

Transistor Element Material: SILICON

Common and reliable material for transistor fabrication.

Terminal Finish: PURE TIN

Ensures good conductivity and solderability for reliable connections.

Maximum Drain Current (ID): 0.35 A

Supports moderate current requirements for various applications.

Maximum Drain-Source On Resistance: 1.4 ohm

Low on-resistance for efficient switching and minimal power loss.

Terminal Position: DUAL

Provides flexibility in circuit layouts and connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX3008CBKS attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.35 A

Maximum Drain-Source On Resistance:

1.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

PURE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NX3008CBKS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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