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NX3008PBK,215

NXP Semiconductors

NX3008PBK,215 by NXP Semiconductors

NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

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Chip1Stop

Japan . 10 parts In-Stock

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DigiKey

USA . 26,097 parts In-Stock

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Mouser Electronics

USA . 259,198 parts In-Stock

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Newark

USA . 17,770 parts In-Stock

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$0.460

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Future Electronics

Canada . 105,000 parts In-Stock

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TTI

USA . 93,000 parts In-Stock

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Arrow

USA . 63,000 parts In-Stock

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Verical

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Element14

Singapore . 7,712 parts In-Stock

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Farnell

UK . 7,000 parts In-Stock

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Rochester

USA . 6,000 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 3,009 parts In-Stock

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TME

Poland . 6,000 parts In-Stock

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$0.121

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Maritex

Poland . 1,666 parts In-Stock

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$0.299

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$0.070

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$0.059

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$0.038

1,666

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Bristol Electronics

USA . 46,341 parts In-Stock

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$0.060

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NAC Semi

USA . 93,000 parts In-Stock

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IBS Electronics

USA . 57,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 19,373 parts In-Stock

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Vyrian

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Elcom Components

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Inventory MP

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LIBRA Elektronik GmbH

Germany . 2,600 parts In-Stock

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Chip Stock

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Infinite Electronics LLP

India . 585 parts In-Stock

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ABC Electronics Ltd.

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Anansix

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Bisco

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Prism Electronics

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Semicontronic

India . 427,506 parts In-Stock

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AZTECH Wire

Italy . 8,217 parts In-Stock

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Argo Parts USA

USA . 2,196 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.074

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$0.070

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$0.068

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Corphita

USA . 3,547 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,480 parts In-Stock

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Modulus Dynamics

Lithuania . 6,051 parts In-Stock

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Advanced Electronics

New Zealand . 285 parts In-Stock

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Eastek

USA . 1,977,000 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 171,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

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Continental Prestige Electronics

USA . 21,421 parts In-Stock

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Formix International (Excess)

India . 18,000 parts In-Stock

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Futuretech Components

Singapore . 17,980 parts In-Stock

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Robosynatics

Brazil . 17,623 parts In-Stock

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Lucentia Tech

USA . 17,623 parts In-Stock

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$0.770

Lixinc

USA . 5,807 parts In-Stock

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UNI Independent Distributors

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Supply Digital

USA . 550 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Overview

Discover the NX3008PBK,215 by NXP Semiconductors, a top-tier P-CHANNEL Small Signal Field Effect Transistor that offers unparalleled performance and reliability. Ideal for a variety of applications, this SINGLE configuration FET boasts cutting-edge METAL-OXIDE SEMICONDUCTOR technology and a maximum operating temperature of 150°C. With a maximum drain current of 0.23 A and surface mount capability, this transistor is a versatile solution for your electronic needs. Trust NXP Semiconductors to deliver quality products that provide value, benefits, and advantages to customers seeking high-performance components.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL FETs offer low on-resistance and high voltage ratings, making them suitable for low power applications.

Configuration: SINGLE

Single configuration FETs simplify circuit designs and are easy to implement in various applications.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, ideal for modern electronic devices.

Maximum Drain Current (Abs) (ID): 0.23 A

With a maximum drain current of 0.23A, this FET can handle low power applications efficiently.

Maximum Power Dissipation (Abs): 0.42 W

The low power dissipation of 0.42W ensures minimal heat generation and efficient operation of the FET.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low input capacitance, making this FET suitable for fast switching applications.

Maximum Operating Temperature: 150 °C

The FET can reliably operate at temperatures up to 150°C, making it suitable for a wide range of environments.

Terminal Finish: TIN

Tin terminal finish provides a reliable and durable connection, enhancing the overall performance and longevity of the FET.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and assembly during manufacturing.

Peak Reflow Temperature °C: 260

The FET can handle peak reflow temperatures of 260°C, ensuring reliable soldering and assembly processes during manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX3008PBK,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NX3008PBK,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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