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2N7002K-T1-GE3

Vishay Intertechnology

2N7002K-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's 2N7002K-T1-GE3 is a N-channel FET with 60V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and on-resistance of 4 ohm, it offers reliable performance in small outline packages.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

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DigiKey

USA . 564,933 parts In-Stock

1+ parts

$0.310

100+ parts

$0.118

1k+ parts

$0.077

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$0.055

564,933

$0.310

$0.118

$0.077

$0.055

Mouser Electronics

USA . 262,062 parts In-Stock

1+ parts

$0.310

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$0.119

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$0.078

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$0.048

262,062

$0.310

$0.119

$0.078

$0.048

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$2.168

100+ parts

$1.973

1k+ parts

$1.778

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5,000

$2.168

$1.973

$1.778

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EBV Elektronik

Germany . 480,000 parts In-Stock

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Verical

USA . 303,000 parts In-Stock

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Future Electronics

Canada . 132,000 parts In-Stock

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Farnell

UK . 78,756 parts In-Stock

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$0.065

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$0.057

Element14

Singapore . 14,864 parts In-Stock

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$0.238

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Newark

USA . 3,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 1,912 parts In-Stock

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$0.044

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Distributors (In-Stock)

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Tomark Electronics Ltd

UK . 2,049 parts In-Stock

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$0.010

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Nova Conductors

Japan . 600 parts In-Stock

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$0.164

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600

$0.164

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Maritex

Poland . 155,705 parts In-Stock

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$0.200

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$0.088

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$0.075

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$0.070

155,705

$0.200

$0.088

$0.075

$0.070

TME

Poland . 2,822 parts In-Stock

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$0.220

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$0.082

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$0.049

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$0.041

2,822

$0.220

$0.082

$0.049

$0.041

Ozdisan Elektronik

Türkiye . 19,869 parts In-Stock

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$57.130

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Chip Stock

USA . 704,174 parts In-Stock

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NAC Semi

USA . 234,000 parts In-Stock

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Vyrian

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IBS Electronics

USA . 102,000 parts In-Stock

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ComSIT USA

USA . 96,303 parts In-Stock

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ComSIT Distribution GmbH

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Cyclops Electronics Ltd

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NexGen Digital

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Component Sense

UK . 46,645 parts In-Stock

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Sensible Micro Corp

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Rutronik

Germany . 12,000 parts In-Stock

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Bristol Electronics

USA . 4,521 parts In-Stock

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ACDS - Activité Composants Distribution Service

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VNN

France . 2,627 parts In-Stock

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Martec Srl

Italy . 2,484 parts In-Stock

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Lantek

USA . 2,405 parts In-Stock

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SPM Sales

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Inventory MP

USA . 1,599 parts In-Stock

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Velocity Electronics

USA . 1,000 parts In-Stock

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Prism Electronics

USA . 292 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 282 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Ampacity Inc.

Singapore . 145,294 parts In-Stock

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$0.025

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Semicontronic

India . 144,436 parts In-Stock

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Corohmni

South Africa . 184 parts In-Stock

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Argo Parts USA

USA . 4,416 parts In-Stock

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$0.116

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Modulus Dynamics

Lithuania . 97 parts In-Stock

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$0.129

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$0.124

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Aranea Global

USA . 1,000 parts In-Stock

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$0.161

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$0.155

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.400

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$0.114

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$0.075

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$0.400

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Aztec Data Supply Inc.

USA . 188 parts In-Stock

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$1.096

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$2.168

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$1.973

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$1.778

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$2.168

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Perfect Parts

USA . 2,675,758 parts In-Stock

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Eastek

USA . 402,000 parts In-Stock

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Futuretech Components

Singapore . 390,370 parts In-Stock

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Allen Electronics Distributors

USA . 159,700 parts In-Stock

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$0.138

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Glotronic Ltd.

UK . 146,400 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 60,634 parts In-Stock

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$0.110

Continental Prestige Electronics

USA . 42,060 parts In-Stock

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$0.075

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$0.069

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iodParts Technologies Inc.

India . 36,690 parts In-Stock

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Assy Fe

Spain . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,393 parts In-Stock

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Robosynatics

Brazil . 7,722 parts In-Stock

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$0.110

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$0.108

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$0.108

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$0.110

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$0.108

Lucentia Tech

USA . 7,722 parts In-Stock

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$0.110

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$0.108

Infinite Electronics LLP (Excess)

. 5,060 parts In-Stock

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Epart123

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,776 parts In-Stock

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GreenTree Electronics

Israel . 2,776 parts In-Stock

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Kepictronics

USA . 1,514 parts In-Stock

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Overview

Unleash the power of innovation with the Vishay Intertechnology 2N7002K-T1-GE3 small signal field effect transistor. With cutting-edge technology and top-notch quality, this N-channel transistor is perfect for switching applications. Its compact design and high performance make it ideal for a wide range of projects. Experience enhanced efficiency and reliability with this versatile component. Upgrade your electronics today with the Vishay Intertechnology 2N7002K-T1-GE3 and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable performance in on/off operation.

Surface Mount: YES

Suitable for surface mount technology, enabling easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 60 V

Ensures a high breakdown voltage to handle voltage spikes and protect the transistor.

Maximum Power Dissipation (Abs): 0.35 W

Efficient power dissipation capability for stable and reliable operation.

Operating Mode: ENHANCEMENT MODE

Enhances control over the transistor's conductivity, allowing for precise switching.

No. of Terminals: 3

Simple three-terminal design for easy integration into circuits.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for various environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002K-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.35 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002K-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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