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BSS123Q-13

Diodes Incorporated

BSS123Q-13 by Diodes Incorporated

BSS123Q-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on-resistance. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 780 parts In-Stock

1+ parts

$0.316

100+ parts

$0.103

1k+ parts

$0.061

10k+ parts

-

780

$0.316

$0.103

$0.061

-

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.055

100+ parts

$1.002

1k+ parts

$1.002

10k+ parts

-

100

$1.055

$1.002

$1.002

-

Farnell

UK . 11,010 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

$0.033

10k+ parts

$0.029

11,010

-

$0.041

$0.033

$0.029

Element14

Singapore . 3,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.045

10k+ parts

$0.044

3,885

-

-

$0.045

$0.044

Distributors (In-Stock)

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Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.055

100+ parts

-

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58

$0.055

-

-

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NAC Semi

USA . 3,310,000 parts In-Stock

1+ parts

-

100+ parts

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$0.045

3,310,000

-

-

-

$0.045

Vyrian

USA . 110,260 parts In-Stock

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-

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110,260

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-

-

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Chip Stock

USA . 60,000 parts In-Stock

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60,000

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EMSNET

USA . 7,221 parts In-Stock

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7,221

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VNN

France . 640 parts In-Stock

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640

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 147,272 parts In-Stock

1+ parts

$0.028

100+ parts

$0.027

1k+ parts

$0.027

10k+ parts

-

147,272

$0.028

$0.027

$0.027

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Decca Corp

Germany . 145,781 parts In-Stock

1+ parts

$0.028

100+ parts

$0.027

1k+ parts

$0.027

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145,781

$0.028

$0.027

$0.027

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Ampacity Inc.

Singapore . 8,504 parts In-Stock

1+ parts

$0.028

100+ parts

-

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-

10k+ parts

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8,504

$0.028

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Continental Prestige Electronics

USA . 5,044 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

$0.053

5,044

$0.054

-

-

$0.053

Argo Parts USA

USA . 3,997 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

3,997

$0.054

-

-

$0.052

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.055

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-

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2,000

$0.055

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-

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Component Stockers USA

USA . 410,263 parts In-Stock

1+ parts

$0.250

100+ parts

$0.090

1k+ parts

$0.050

10k+ parts

$0.030

410,263

$0.250

$0.090

$0.050

$0.030

Modulus Dynamics

Lithuania . 23,752 parts In-Stock

1+ parts

$0.324

100+ parts

$0.324

1k+ parts

$0.324

10k+ parts

-

23,752

$0.324

$0.324

$0.324

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Aztec Data Supply Inc.

USA . 945 parts In-Stock

1+ parts

$0.406

100+ parts

-

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945

$0.406

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-

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.055

100+ parts

$1.002

1k+ parts

$1.002

10k+ parts

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100

$1.055

$1.002

$1.002

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Corohmni

South Africa . 161 parts In-Stock

1+ parts

$1.557

100+ parts

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161

$1.557

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Infinite Electronics LLP (Excess)

. 1,463,819 parts In-Stock

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1,463,819

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Eastek

USA . 230,000 parts In-Stock

1+ parts

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$0.037

230,000

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$0.037

GreenTree Electronics

Israel . 100,000 parts In-Stock

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100,000

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Robosynatics

Brazil . 25,867 parts In-Stock

1+ parts

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100+ parts

$1.317

1k+ parts

$1.290

10k+ parts

$1.290

25,867

-

$1.317

$1.290

$1.290

Lucentia Tech

USA . 25,867 parts In-Stock

1+ parts

-

100+ parts

$1.317

1k+ parts

$1.290

10k+ parts

$1.290

25,867

-

$1.317

$1.290

$1.290

Lixinc

USA . 4,976 parts In-Stock

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4,976

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Perfect Parts

USA . 2,800 parts In-Stock

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2,800

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Overview

Upgrade your electronic devices with the BSS123Q-13 by Diodes Incorporated. This small signal field-effect transistor offers high-quality performance and reliability, making it the perfect choice for switching applications. With a single configuration and built-in diode, this N-channel transistor provides seamless operation and efficient power management. Trust in Diodes Incorporated's expertise in semiconductor technology to deliver a product that exceeds expectations. Experience the value and benefits of the BSS123Q-13, where quality meets innovation for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations and control in electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in those scenarios.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltage levels, offering versatility and reliability in different circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors provide better control and efficiency in switching applications.

Maximum Drain Current (Abs) (ID): 0.17 A

Sufficient current handling capacity for many small signal applications.

Maximum Power Dissipation (Abs): 0.3 W

Efficient power dissipation capability, ensuring the transistor operates within safe temperature limits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance with low power consumption, making it ideal for modern electronic devices.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, suitable for various environmental conditions.

Maximum Feedback Capacitance (Crss): 6 pF

Low feedback capacitance helps improve high-frequency performance and stability in circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS123Q-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.17 A

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS123Q-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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