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BSS138PW,115

NXP Semiconductors

BSS138PW,115 by NXP Semiconductors

NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.

Median Price

$0.086

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,724,100 parts In-Stock

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Chip1Stop

Japan . 2,502 parts In-Stock

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DigiKey

USA . 59,567 parts In-Stock

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Arrow

USA . 42,699 parts In-Stock

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EBV Elektronik

Germany . 1,593,000 parts In-Stock

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Verical

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Elektronika Sales Private Limited

India . 24,000 parts In-Stock

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Farnell

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TTI

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Digiode

USA . 4,858 parts In-Stock

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Ozdisan Elektronik

Türkiye . 2,670 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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TME

Poland . 119,635 parts In-Stock

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$0.064

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Maritex

Poland . 2 parts In-Stock

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$0.177

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$0.095

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IBS Electronics

USA . 1,797,000 parts In-Stock

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NexGen Digital

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NAC Semi

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Semtec, LLC

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Micros

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Anansix

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PC Components Company LLC

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Semicontronic

India . 779,741 parts In-Stock

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Ampacity Inc.

Singapore . 241,807 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 2,616 parts In-Stock

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Argo Parts USA

USA . 3,315 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Advanced Electronics

New Zealand . 9,000 parts In-Stock

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Aztec Data Supply Inc.

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Modulus Dynamics

Lithuania . 23,908 parts In-Stock

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Corohmni

South Africa . 1,299 parts In-Stock

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Eastek

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Perfect Parts

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Continental Prestige Electronics

USA . 75,809 parts In-Stock

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GreenTree Electronics

Israel . 63,000 parts In-Stock

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Lucentia Tech

USA . 60,294 parts In-Stock

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Authorized Procurement Solutions

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Component Stockers USA

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Overview

Discover the power of the BSS138PW,115 by NXP Semiconductors, a top-quality small signal field effect transistor perfect for switching applications. With N-CHANNEL polarity and a built-in diode, this enhancement mode transistor offers reliability and efficiency like no other. Its sleek gull wing design and high 60V breakdown voltage make it ideal for a range of electronics projects. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the BSS138PW,115 and experience superior performance and value today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, making them suitable for high-speed switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Capable of handling up to 60 volts, making it suitable for a wide range of voltage applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high input impedance, low noise, and high gain, making it ideal for amplification and switching.

Maximum Drain Current (ID): 0.32 A

Capable of handling currents up to 0.32 amperes, suitable for various low-power applications.

Maximum Drain-Source On Resistance: 1.6 ohm

Low on-resistance ensures minimal power loss and efficient operation of the transistor.

Peak Reflow Temperature °C: 260

Capable of withstanding high temperatures during soldering processes, ensuring reliable assembly and operation.

Reference Standard: AEC-Q101

Compliance with the automotive industry standard ensures high-quality and reliable performance for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138PW,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138PW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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