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BS170P

Diodes Incorporated

BS170P by Diodes Incorporated

The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.

Median Price

$1.170

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.404

100+ parts

$0.384

1k+ parts

$0.384

10k+ parts

-

350

$0.404

$0.384

$0.384

-

Element14

Singapore . 2,230 parts In-Stock

1+ parts

$1.170

100+ parts

$0.701

1k+ parts

$0.585

10k+ parts

-

2,230

$1.170

$0.701

$0.585

-

Farnell

UK . 2,314 parts In-Stock

1+ parts

$1.400

100+ parts

$0.477

1k+ parts

$0.350

10k+ parts

$0.300

2,314

$1.400

$0.477

$0.350

$0.300

Mouser Electronics

USA . 6,266 parts In-Stock

1+ parts

$1.450

100+ parts

$0.588

1k+ parts

-

10k+ parts

-

6,266

$1.450

$0.588

-

-

DigiKey

USA . 3,050 parts In-Stock

1+ parts

$1.450

100+ parts

$0.602

1k+ parts

$0.427

10k+ parts

$0.336

3,050

$1.450

$0.602

$0.427

$0.336

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.437

10k+ parts

$0.353

4,000

-

-

$0.437

$0.353

Verical

USA . 3,962 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.435

10k+ parts

$0.352

3,962

-

-

$0.435

$0.352

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$0.373

-

-

-

Bristol Electronics

USA . 17,001 parts In-Stock

1+ parts

$0.825

100+ parts

$0.305

1k+ parts

$0.214

10k+ parts

-

17,001

$0.825

$0.305

$0.214

-

TME

Poland . 3,640 parts In-Stock

1+ parts

$1.220

100+ parts

$0.516

1k+ parts

$0.396

10k+ parts

-

3,640

$1.220

$0.516

$0.396

-

Chip Stock

USA . 78,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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78,000

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Dan-Mar Components

USA . 20,208 parts In-Stock

1+ parts

-

100+ parts

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20,208

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-

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ACDS - Activité Composants Distribution Service

France . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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18,000

-

-

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Vyrian

USA . 3,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,986

-

-

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North Shore Components

USA . 2,529 parts In-Stock

1+ parts

-

100+ parts

-

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2,529

-

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Tech-Mark Corp

USA . 140 parts In-Stock

1+ parts

-

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140

-

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Ashlea Components Ltd

UK . 109 parts In-Stock

1+ parts

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109

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M&R Communications

USA . 96 parts In-Stock

1+ parts

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100+ parts

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96

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,127 parts In-Stock

1+ parts

$0.225

100+ parts

-

1k+ parts

-

10k+ parts

-

3,127

$0.225

-

-

-

Semicontronic

India . 2,596 parts In-Stock

1+ parts

$0.225

100+ parts

$0.219

1k+ parts

$0.218

10k+ parts

-

2,596

$0.225

$0.219

$0.218

-

Continental Prestige Electronics

USA . 5,760 parts In-Stock

1+ parts

$0.356

100+ parts

-

1k+ parts

-

10k+ parts

$0.349

5,760

$0.356

-

-

$0.349

Argo Parts USA

USA . 1,202 parts In-Stock

1+ parts

$0.356

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

1,202

$0.356

-

-

$0.345

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$0.373

100+ parts

$0.354

1k+ parts

$0.337

10k+ parts

$0.332

10

$0.373

$0.354

$0.337

$0.332

Modulus Dynamics

Lithuania . 14,213 parts In-Stock

1+ parts

$0.392

100+ parts

$0.392

1k+ parts

$0.392

10k+ parts

-

14,213

$0.392

$0.392

$0.392

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Corohmni

South Africa . 620 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

-

10k+ parts

-

620

$0.392

-

-

-

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.404

100+ parts

$0.384

1k+ parts

$0.384

10k+ parts

-

350

$0.404

$0.384

$0.384

-

Aztec Data Supply Inc.

USA . 2,566 parts In-Stock

1+ parts

$0.699

100+ parts

-

1k+ parts

-

10k+ parts

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2,566

$0.699

-

-

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Microchip USA

USA . 207 parts In-Stock

1+ parts

$5.200

100+ parts

-

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207

$5.200

-

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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100+ parts

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20,000

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Lixinc

USA . 16,725 parts In-Stock

1+ parts

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16,725

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Perfect Parts

USA . 7,447 parts In-Stock

1+ parts

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7,447

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

$89.100

1k+ parts

$89.100

10k+ parts

$89.100

500

-

$89.100

$89.100

$89.100

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$89.100

1k+ parts

$89.100

10k+ parts

$89.100

500

-

$89.100

$89.100

$89.100

EMSNET (Excess)

USA . 13 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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13

-

-

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Overview

The BS170P by Diodes Incorporated is a top-of-the-line N-CHANNEL small signal Field Effect Transistor (FET) that delivers exceptional performance and reliability. Perfect for switching applications, this transistor boasts a high-quality build with a breakthrough metal-oxide semiconductor technology. With a minimum DS breakdown voltage of 60V and a maximum drain current of 0.27A, the BS170P offers unmatched value and benefits to customers seeking superior electronic components. Upgrade your projects with the BS170P and experience the difference Diodes Incorporated brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance and efficiency compared to P-Channel transistors, making this product a good choice for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, providing better protection and reliability in circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, making it convenient for assembly.

Terminal Form: WIRE

The wire terminal form offers secure and reliable connections, ensuring stable performance in various applications.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for easier control of the transistor's conductivity, providing better efficiency and performance.

No. of Terminals: 3

Having three terminals provides flexibility in circuit connections and allows for versatile use in different configurations.

Package Style (Meter): IN-LINE

The in-line package style is compact and space-saving, ideal for applications where size and layout are crucial factors.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in small signal applications, making this transistor a good choice for various projects.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency, low power consumption, and reliability, making this product a suitable choice for different electronic devices.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability and performance of the transistor.

Maximum Drain Current (ID): 0.27 A

With a maximum drain current of 0.27 A, this transistor can handle moderate current loads in various applications, making it a versatile choice.

Maximum Drain-Source On Resistance: 5 ohm

The low drain-source on resistance of 5 ohms ensures efficient power handling and minimal voltage drop across the transistor, enhancing overall performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit connection and ensures proper orientation, making it easy to integrate this transistor into different projects.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds allows for efficient and reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Operating at a peak reflow temperature of 260°C ensures proper solder melting and component bonding, resulting in reliable performance and durability.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS170P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS170P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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