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BSS84AKS,115

NXP Semiconductors

BSS84AKS,115 by NXP Semiconductors

NXP Semiconductors' BSS84AKS,115 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.16A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode.

Median Price

$0.176

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28

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1k+

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DigiKey

USA . 14,071 parts In-Stock

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Mouser Electronics

USA . 3,216 parts In-Stock

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$0.350

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$0.088

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Newark

USA . 83,799 parts In-Stock

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Adafruit Industries

USA . 600 parts In-Stock

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Avnet

USA . 4,170,000 parts In-Stock

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Arrow

USA . 204,000 parts In-Stock

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Verical

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Farnell

UK . 113,263 parts In-Stock

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EBV Elektronik

Germany . 30,000 parts In-Stock

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Element14

Singapore . 8,979 parts In-Stock

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RS (Exports)

UK . 8,550 parts In-Stock

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Rochester

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 3,000 parts In-Stock

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Digiode

USA . 388 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Maritex

Poland . 301 parts In-Stock

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301

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TME

Poland . 2,228 parts In-Stock

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$0.220

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$0.086

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$0.067

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Bristol Electronics

USA . 237 parts In-Stock

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IBS Electronics

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ComSIT Distribution GmbH

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ComSIT USA

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Chip Stock

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Sensible Micro Corp

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NAC Semi

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Vyrian

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Semicontronic

India . 119,445 parts In-Stock

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Ampacity Inc.

Singapore . 41,484 parts In-Stock

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Corphita

USA . 4,374 parts In-Stock

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AZTECH Wire

Italy . 11,220 parts In-Stock

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Argo Parts USA

USA . 3,233 parts In-Stock

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Modulus Dynamics

Lithuania . 85 parts In-Stock

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Continental Prestige Electronics

USA . 93,325 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,569 parts In-Stock

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Corohmni

South Africa . 360 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

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Lucentia Tech

USA . 20,073 parts In-Stock

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Allen Electronics Distributors

USA . 8,880 parts In-Stock

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Brazil . 6,691 parts In-Stock

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UNI Independent Distributors

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iodParts Technologies Inc.

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Authorized Procurement Solutions

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Eastek

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Overview

Unlock seamless switching capabilities with the NXP Semiconductors BSS84AKS,115 P-Channel FET. Designed with precision and quality in mind, this small signal transistor offers enhanced performance and reliability for a variety of applications. With its compact design and cutting-edge technology, this transistor is perfect for use in power management, battery charging, and other switching applications. Trust NXP Semiconductors to deliver top-of-the-line components that exceed expectations and provide value to customers seeking high-quality solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good insulation and protection, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are efficient in certain circuit designs and can be used effectively in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Minimum DS Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this transistor can handle higher voltages without failure, suitable for a variety of applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easy to control and are commonly used in digital circuits, providing high efficiency and fast switching speeds.

Maximum Drain Current (Abs) (ID): 0.16 A

With a maximum drain current of 0.16A, this transistor can handle moderate current loads making it suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.99 W

The high power dissipation rating allows the transistor to handle heat efficiently, improving its overall reliability and longevity.

Maximum Drain-Source On Resistance: 8.5 ohm

Low drain-source on resistance results in reduced power loss and improved efficiency in switching operations.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS84AKS,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.16 A

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

8.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS84AKS,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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