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BS170-D27Z

Onsemi

BS170-D27Z by Onsemi

BS170-D27Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating at 150°C, it comes in a ROUND package with THROUGH-HOLE terminals.

Median Price

$0.438

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3,031 parts In-Stock

1+ parts

$0.386

100+ parts

$0.106

1k+ parts

$0.090

10k+ parts

-

3,031

$0.386

$0.106

$0.090

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Mouser Electronics

USA . 12,198 parts In-Stock

1+ parts

$0.490

100+ parts

$0.185

1k+ parts

$0.144

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12,198

$0.490

$0.185

$0.144

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DigiKey

USA . 1,954 parts In-Stock

1+ parts

$0.490

100+ parts

$0.192

1k+ parts

$0.128

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-

1,954

$0.490

$0.192

$0.128

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Distrelec

Netherlands . 1,245 parts In-Stock

1+ parts

$0.519

100+ parts

$0.430

1k+ parts

$0.254

10k+ parts

$0.165

1,245

$0.519

$0.430

$0.254

$0.165

Newark

USA . 1 parts In-Stock

1+ parts

$0.540

100+ parts

$0.197

1k+ parts

$0.109

10k+ parts

-

1

$0.540

$0.197

$0.109

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Element14

Singapore . 3 parts In-Stock

1+ parts

$0.652

100+ parts

$0.245

1k+ parts

$0.110

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$0.108

3

$0.652

$0.245

$0.110

$0.108

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.294

100+ parts

$1.178

1k+ parts

$1.061

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500

$1.294

$1.178

$1.061

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Verical

USA . 10,000 parts In-Stock

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$0.076

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$0.076

Master Electronics

USA . 10,000 parts In-Stock

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$0.062

10,000

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$0.062

Rochester

USA . 8,361 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

8,361

-

$0.092

$0.077

$0.068

EBV Elektronik

Germany . 8,000 parts In-Stock

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8,000

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Chip1Stop

Japan . 8,000 parts In-Stock

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$0.081

8,000

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$0.081

Arrow

USA . 6,000 parts In-Stock

1+ parts

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$0.072

6,000

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$0.072

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,619 parts In-Stock

1+ parts

$0.071

100+ parts

-

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2,619

$0.071

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Nova Conductors

Japan . 1,250 parts In-Stock

1+ parts

$0.116

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1,250

$0.116

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TME

Poland . 4,091 parts In-Stock

1+ parts

$0.460

100+ parts

$0.158

1k+ parts

$0.104

10k+ parts

$0.092

4,091

$0.460

$0.158

$0.104

$0.092

Chip Stock

USA . 70,000 parts In-Stock

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VNN

France . 23,277 parts In-Stock

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Flip Electronics

USA . 15,215 parts In-Stock

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Electro Sonic

Canada . 10,000 parts In-Stock

1+ parts

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$0.071

10,000

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$0.071

IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

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$0.080

10,000

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$0.080

NAC Semi

USA . 4,000 parts In-Stock

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$0.136

4,000

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$0.136

Vyrian

USA . 3,730 parts In-Stock

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3,730

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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ComSIT USA

USA . 2,000 parts In-Stock

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Anansix

USA . 1,936 parts In-Stock

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Prism Electronics

USA . 27 parts In-Stock

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27

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,305 parts In-Stock

1+ parts

$0.050

100+ parts

-

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11,305

$0.050

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Semicontronic

India . 8,721 parts In-Stock

1+ parts

$0.055

100+ parts

$0.054

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$0.053

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8,721

$0.055

$0.054

$0.053

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Corphita

USA . 1,450 parts In-Stock

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$0.068

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1,450

$0.068

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Continental Prestige Electronics

USA . 8,332 parts In-Stock

1+ parts

$0.114

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$0.112

8,332

$0.114

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$0.112

Argo Parts USA

USA . 6,085 parts In-Stock

1+ parts

$0.114

100+ parts

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10k+ parts

$0.111

6,085

$0.114

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-

$0.111

Bastille Electronics

Australia . 4,219 parts In-Stock

1+ parts

$0.116

100+ parts

$0.110

1k+ parts

$0.105

10k+ parts

$0.103

4,219

$0.116

$0.110

$0.105

$0.103

Modulus Dynamics

Lithuania . 679 parts In-Stock

1+ parts

$0.127

100+ parts

$0.125

1k+ parts

$0.121

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679

$0.127

$0.125

$0.121

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Corohmni

South Africa . 592 parts In-Stock

1+ parts

$0.131

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592

$0.131

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Aztec Data Supply Inc.

USA . 1,273 parts In-Stock

1+ parts

$1.274

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1,273

$1.274

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.037

100+ parts

$1.854

1k+ parts

$1.670

10k+ parts

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1,000

$2.037

$1.854

$1.670

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Perfect Parts

USA . 20,160 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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QUARKTWIN TECHNOLOGY LTD

USA . 4,986 parts In-Stock

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4,986

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TANS Electronics

Latvia . 4,801 parts In-Stock

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4,801

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Eastek

USA . 4,000 parts In-Stock

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4,000

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Robosynatics

Brazil . 3,000 parts In-Stock

1+ parts

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$3.132

1k+ parts

$3.132

10k+ parts

$3.132

3,000

-

$3.132

$3.132

$3.132

Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

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$3.132

1k+ parts

$3.132

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$3.132

3,000

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$3.132

$3.132

$3.132

Problanco Electronics

Mexico . 2,415 parts In-Stock

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2,415

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Supply Digital

USA . 1,449 parts In-Stock

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1,449

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SupplyDigital Components

Austria . 1,123 parts In-Stock

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Kulean Microsystems

USA . 467 parts In-Stock

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467

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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438

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Overview

Discover the ultimate solution for your switching needs with the BS170-D27Z by Onsemi. Crafted with precision and expertise, this N-CHANNEL field-effect transistor offers unbeatable performance and reliability. Whether you're looking to enhance your electronic projects or streamline your applications, this single transistor with a built-in diode is the perfect choice. With a high DS breakdown voltage of 60V and maximum drain current of 0.5A, you can trust this transistor to deliver exceptional results every time. Upgrade your circuit designs with the BS170-D27Z and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

Offers superior performance and efficiency, making it suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making this transistor ideal for compact designs.

Transistor Application: SWITCHING

Enables fast and efficient switching operations, making it perfect for applications requiring rapid switching speeds.

Minimum DS Breakdown Voltage: 60 V

Ensures reliable operation in high-voltage applications, making this transistor a robust choice.

Package Shape: ROUND

Provides versatility in mounting options and allows for easy integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Simplifies the assembly process and ensures secure connections, making this transistor easy to work with.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's conductivity, ensuring efficient performance in a wide range of applications.

Maximum Drain Current (Abs) (ID): 0.5 A

Provides ample current handling capacity, making this transistor suitable for various power requirements.

No. of Terminals: 3

Offers flexibility in circuit configurations and connections, making this transistor versatile for different applications.

Maximum Power Dissipation (Abs): 0.83 W

Allows for efficient heat dissipation and reliable performance, making this transistor a durable choice.

Package Style (Meter): CYLINDRICAL

Provides a compact and space-saving design, making this transistor suitable for tight spaces or small electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Ensures high performance and reliability, making this transistor a dependable choice for demanding applications.

Maximum Operating Temperature: 150 °C

Offers a wide temperature range for operation, making this transistor suitable for various environmental conditions.

Transistor Element Material: SILICON

Provides stable and consistent performance, making this transistor a reliable choice for long-term use.

Terminal Finish: MATTE TIN

Increases solderability and ensures secure connections, making this transistor easy to work with during assembly.

Maximum Drain-Source On Resistance: 5 ohm

Provides low resistance for efficient power handling, making this transistor suitable for high-performance applications.

Terminal Position: BOTTOM

Simplifies PCB layout and assembly, making this transistor easy to integrate into electronic circuits.

Maximum Feedback Capacitance (Crss): 10 pF

Provides low feedback capacitance for stable performance, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS170-D27Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS170-D27Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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