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DMP610DL-13

Diodes Incorporated

DMP610DL-13 by Diodes Incorporated

DMP610DL-13 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.18A ID, and 10 ohm RDS(on). With ENHANCEMENT MODE operation, it has a max temp of 150°C and METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 20,000 parts In-Stock

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$0.028

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$0.028

Verical

USA . 20,000 parts In-Stock

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$0.028

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$0.028

DigiKey

USA . 1,627 parts In-Stock

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$0.036

1,627

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$0.036

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NAC Semi

USA . 20,000 parts In-Stock

1+ parts

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$0.116

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Nova Conductors

Japan . 73 parts In-Stock

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73

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Distributors (Availability)

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Ampacity Inc.

Singapore . 131,506 parts In-Stock

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$0.018

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$0.018

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Modulus Dynamics

Lithuania . 22,214 parts In-Stock

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$0.606

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$0.606

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$0.606

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22,214

$0.606

$0.606

$0.606

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Corohmni

South Africa . 758 parts In-Stock

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$1.660

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758

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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Eastek

USA . 20,000 parts In-Stock

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$0.029

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Continental Prestige Electronics

USA . 3,838 parts In-Stock

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Argo Parts USA

USA . 3,637 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Field Effect Transistor for your switching applications? Look no further than the DMP610DL-13 by Diodes Incorporated. With its P-Channel configuration, built-in diode, and enhancement mode operation, this transistor offers exceptional performance and efficiency. Whether you need it for consumer electronics, automotive systems, or industrial equipment, this transistor delivers the power and reliability you need. Trust in Diodes Incorporated to provide cutting-edge technology that meets your demands. Elevate your designs with the DMP610DL-13 and experience the difference in quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

Suitable for certain applications where P-channel FETs are preferred over N-channel FETs, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuitry by integrating a diode within the transistor package, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient switching performance.

Surface Mount: YES

Suitable for surface mount technology, allowing for easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 60 V

Ideal for applications requiring voltages up to 60V, providing a safety margin for voltage spikes.

Package Shape: RECTANGULAR

A common and versatile package shape that is easy to handle and mount on a PCB.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on the PCB, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer ease of control and high input impedance, making them suitable for various applications.

No. of Terminals: 3

Simplifies circuit design and reduces complexity compared to FETs with more terminals, making it easier to integrate into designs.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space on the PCB and allows for dense circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

A commonly used FET technology known for its reliability and efficiency in various applications.

Maximum Power Dissipation Ambient: 0.5 W

Can handle power dissipation up to 0.5W, suitable for low to medium power applications without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, allowing for use in demanding thermal environments.

Transistor Element Material: SILICON

Silicon-based transistor element offers good performance and reliability characteristics for various applications.

Minimum Operating Temperature: -55 °C

Can operate in cold temperatures down to -55°C, suitable for applications in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and electrical contact, ensuring reliable connections.

Maximum Drain Current (ID): 0.18 A

Can handle drain currents up to 0.18A, suitable for low to medium current applications.

Maximum Drain-Source On Resistance: 10 ohm

Low on-resistance of 10 ohms ensures efficient switching and minimal power loss in the transistor.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and soldering, enhancing ease of integration.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures up to 260°C during assembly, ensuring proper solder joints.

Maximum Feedback Capacitance (Crss): 2.8 pF

Low feedback capacitance of 2.8pF minimizes feedback effects and ensures stable high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP610DL-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW CAPACITANCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.8 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.5 W

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP610DL-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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