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DMP6023LFGQ-13

Diodes Incorporated

DMP6023LFGQ-13 by Diodes Incorporated

DMP6023LFGQ-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.025 ohm RDS(on), and 7.7A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring METAL-OXIDE SEMICONDUCTOR tech and -55 to 150°C operating range.

Median Price

$0.920

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 39,598 parts In-Stock

1+ parts

$1.390

100+ parts

$0.578

1k+ parts

$0.410

10k+ parts

-

39,598

$1.390

$0.578

$0.410

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Mouser Electronics

USA . 39 parts In-Stock

1+ parts

$1.400

100+ parts

$0.533

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-

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39

$1.400

$0.533

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-

Arrow

USA . 46,164 parts In-Stock

1+ parts

-

100+ parts

-

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$0.409

10k+ parts

$0.317

46,164

-

-

$0.409

$0.317

Verical

USA . 46,164 parts In-Stock

1+ parts

-

100+ parts

-

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$0.450

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46,164

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-

$0.450

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Distributors (In-Stock)

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Nova Conductors

Japan . 16 parts In-Stock

1+ parts

$0.358

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16

$0.358

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IBS Electronics

USA . 99,000 parts In-Stock

1+ parts

$0.792

100+ parts

$0.743

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-

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$0.750

99,000

$0.792

$0.743

-

$0.750

Vyrian

USA . 649,914 parts In-Stock

1+ parts

-

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649,914

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Kruse Electronics AG

Switzerland . 60,000 parts In-Stock

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60,000

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Kruse

Germany . 60,000 parts In-Stock

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60,000

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Chip Stock

USA . 54,000 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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Elcom Components

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 805,978 parts In-Stock

1+ parts

$0.207

100+ parts

$0.202

1k+ parts

$0.201

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805,978

$0.207

$0.202

$0.201

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Ampacity Inc.

Singapore . 647,674 parts In-Stock

1+ parts

$0.207

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647,674

$0.207

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Continental Prestige Electronics

USA . 3,610 parts In-Stock

1+ parts

$0.358

100+ parts

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$0.351

3,610

$0.358

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-

$0.351

Argo Parts USA

USA . 3,263 parts In-Stock

1+ parts

$0.358

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$0.347

3,263

$0.358

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-

$0.347

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.358

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1,000

$0.358

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Corohmni

South Africa . 405 parts In-Stock

1+ parts

$0.364

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405

$0.364

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Aztec Data Supply Inc.

USA . 4,625 parts In-Stock

1+ parts

$0.460

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4,625

$0.460

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.025

100+ parts

$0.933

1k+ parts

$0.840

10k+ parts

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1,000

$1.025

$0.933

$0.840

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Perfect Parts

USA . 26,880 parts In-Stock

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Lixinc

USA . 15,309 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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150

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Lucentia Tech

USA . 150 parts In-Stock

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$1.553

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$1.553

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$1.553

150

-

$1.553

$1.553

$1.553

ChipstoGo Electronic ltd

UK . 36 parts In-Stock

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36

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Overview

Discover the power of the DMP6023LFGQ-13 by Diodes Incorporated, a top-of-the-line P-Channel Small Signal Field Effect Transistor that is perfect for switching applications. With its high-quality construction and cutting-edge technology, this transistor offers enhanced performance and reliability. Ideal for a wide range of electronic devices, this product is designed to meet your needs with precision. Experience seamless operation and unmatched efficiency with the DMP6023LFGQ-13, setting a new standard in the industry. Unlock the potential of your projects with this exceptional component from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications with low power consumption.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltages, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 7.7 A

Capable of handling high currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.025 ohm

Low on-resistance results in minimal power loss and efficient operation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, providing reliability in harsh environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature conditions, increasing versatility.

Terminal Finish: MATTE TIN

Provides good solderability and ensures a reliable electrical connection.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP6023LFGQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

7.7 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP6023LFGQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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