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DMP6185SE-13

Diodes Incorporated

DMP6185SE-13 by Diodes Incorporated

DMP6185SE-13 by Diodes Incorporated is a P-channel small signal FET with a min DS breakdown voltage of 60V. It is designed for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 3A and a max drain-source on resistance of 0.15 ohm.

Median Price

$0.248

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 725 parts In-Stock

1+ parts

$0.831

100+ parts

$0.347

1k+ parts

$0.249

10k+ parts

-

725

$0.831

$0.347

$0.249

-

Arrow

USA . 47,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.215

10k+ parts

$0.165

47,464

-

-

$0.215

$0.165

Verical

USA . 47,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.239

10k+ parts

-

47,464

-

-

$0.239

-

Element14

Singapore . 3,837 parts In-Stock

1+ parts

-

100+ parts

$0.410

1k+ parts

$0.243

10k+ parts

$0.218

3,837

-

$0.410

$0.243

$0.218

DigiKey

USA . 2,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.165

2,475

-

-

-

$0.165

Farnell

UK . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.257

1k+ parts

$0.177

10k+ parts

$0.153

1,000

-

$0.257

$0.177

$0.153

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 18 parts In-Stock

1+ parts

$0.201

100+ parts

-

1k+ parts

-

10k+ parts

-

18

$0.201

-

-

-

IBS Electronics

USA . 10,007 parts In-Stock

1+ parts

$0.624

100+ parts

$0.505

1k+ parts

-

10k+ parts

$0.351

10,007

$0.624

$0.505

-

$0.351

Vyrian

USA . 133,926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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133,926

-

-

-

-

Chip Stock

USA . 39,290 parts In-Stock

1+ parts

-

100+ parts

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39,290

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

-

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.222

5,000

-

-

-

$0.222

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 133,825 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

133,825

$0.083

-

-

-

Semicontronic

India . 133,788 parts In-Stock

1+ parts

$0.181

100+ parts

$0.176

1k+ parts

$0.176

10k+ parts

-

133,788

$0.181

$0.176

$0.176

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Component Stockers USA

USA . 115,005 parts In-Stock

1+ parts

$0.190

100+ parts

$0.150

1k+ parts

$0.150

10k+ parts

$0.120

115,005

$0.190

$0.150

$0.150

$0.120

Continental Prestige Electronics

USA . 3,249 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

$0.196

3,249

$0.200

-

-

$0.196

Argo Parts USA

USA . 3,013 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

$0.194

3,013

$0.200

-

-

$0.194

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.201

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

$0.201

-

-

-

Modulus Dynamics

Lithuania . 10,504 parts In-Stock

1+ parts

$0.210

100+ parts

$0.210

1k+ parts

$0.210

10k+ parts

-

10,504

$0.210

$0.210

$0.210

-

Corohmni

South Africa . 405 parts In-Stock

1+ parts

$0.210

100+ parts

-

1k+ parts

-

10k+ parts

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405

$0.210

-

-

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Aztec Data Supply Inc.

USA . 2,671 parts In-Stock

1+ parts

$1.510

100+ parts

-

1k+ parts

-

10k+ parts

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2,671

$1.510

-

-

-

Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$1.651

100+ parts

$1.502

1k+ parts

$1.354

10k+ parts

-

900

$1.651

$1.502

$1.354

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Eastek

USA . 20,000 parts In-Stock

1+ parts

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100+ parts

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20,000

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Lixinc

USA . 15,528 parts In-Stock

1+ parts

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15,528

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Alle Elektronik GmbH

Germany . 3,057 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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3,057

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Perfect Parts

USA . 112 parts In-Stock

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112

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Overview

Discover the DMP6185SE-13 by Diodes Incorporated, a small signal field effect transistor that offers outstanding quality and value. Designed with cutting-edge technology, this P-channel transistor is perfect for switching applications. With a minimum DS breakdown voltage of 60V and maximum drain current of 3A, it delivers reliable performance. The DMP6185SE-13 features a sleek rectangular package shape and surface mount capability for easy installation. Whether you're in the automotive industry or electronic design, this transistor is a game-changer. Trust Diodes Incorporated, a leading manufacturer known for their expertise and innovation. Upgrade your projects with the DMP6185SE-13 and experience its exceptional benefits today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are commonly used in high-side switch applications, offering advantages in specific circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can prevent damage from reverse voltage.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it suitable for power management and control.

Surface Mount: YES

Enables easy integration onto PCBs, saving space and allowing for automated assembly.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, increasing its versatility.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on a PCB and easy alignment during assembly.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and are suitable for surface mounting, enhancing reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally-OFF devices, providing easier control over power flow in the circuit.

No. of Terminals: 4

The 4-terminal design enables efficient connection and control in various circuit configurations.

Maximum Power Dissipation (Abs): 2.2 W

With a high power dissipation rating, this FET can handle significant power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space and allows for dense PCB layouts in compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability in transistor operation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon FETs offer good performance and reliability, making them a popular choice in many electronic applications.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without impact on performance, suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Drain Current (ID): 3 A

With a high drain current rating, this FET can handle high current loads in switching applications.

Maximum Drain-Source On Resistance: 0.15 ohm

Low on-resistance helps minimize power loss and improve efficiency in switching circuits.

Terminal Position: DUAL

Dual terminal position allows for flexible connection options in circuit layouts, enabling versatile use.

Case Connection: DRAIN

Drain connection simplifies circuit design and layout, providing ease of connection for specific applications.

Reference Standard: AEC-Q101

Complies with automotive industry standards for reliability and performance, making it suitable for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP6185SE-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

2.2 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP6185SE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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