Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTR4003NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150°C. Suitable for surface mount with GULL WING terminals.
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Provides durability and protection for the internal components of the transistor, making it suitable for various operating conditions.
Offers efficient performance in switching applications, especially in circuits where an N-channel FET is preferred.
Simplifies circuit design by incorporating a diode within the transistor package, saving space and reducing the need for external components.
Designed specifically for switching applications, making it ideal for use in circuits that require high-speed switching operations.
Enables easy and reliable mounting on circuit boards, saving assembly time and offering improved thermal performance.
Provides a sufficient margin of safety for voltage spikes and ensures the transistor can withstand higher voltages during operation.
Capable of handling moderate current loads, suitable for low-power applications where efficiency is important.
Has a high power dissipation rating, allowing the transistor to handle heat efficiently and maintain stable operation under varying loads.
Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern or where operation in elevated temperatures is required.
Low on-resistance ensures minimal power loss in the transistor during operation, contributing to higher efficiency and reduced heat generation.
Small Signal Field Effect Transistors (FET) NTR4003NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTR4003NT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - SOT23 16/Sep/2016
PCN Assembly/Origin - Mult Dev Mold Comp Chg 1/Apr/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148-GS08
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
Frontier Electronics
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
SMBJ18CA
Telefunken Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
LL4148
Synsemi
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
Fairchild Semiconductor
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
ZVN3310FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
NTS2101PT1G
Onsemi
NTS2101PT1G by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage, 3.7A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin terminal finish.
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
2N7000
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
2N7002K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Maximum Drain Current (ID): .115 A;
BSS138BKVL
Nexperia
Nexperia's BSS138BKVL is a N-channel FET with 60V breakdown voltage and 1.6 ohm on-resistance, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor is surface mountable and complies with AEC-Q101 and IEC-60134 standards.
2N7002DW
Onsemi's 2N7002DW is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A max drain current, and 7.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a peak reflow temp of 260C and -55 to 150C operating range.
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
BSS169H6327XTSA1
Infineon Technologies
BSS169H6327XTSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in depletion mode, and has a max power dissipation of 0.36W.
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
2N7002T
2N7002T by Onsemi is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 2ohm On Resistance. Suitable for small outline packages with Matte Tin finish, operating up to 150°C.
NDS355AN
NDS355AN by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.7A Drain Current, 0.085 ohm On Resistance, and -55 to 150 °C Operating Temperature range. Suitable for small outline packages in surface mount configurations.
BSS123LT1
BSS123LT1 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals for surface mount assembly.
2N7002L
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;
BC548B
NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
NDS331N
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
BSS123_NL
Fairchild Semiconductor's BSS123_NL is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. The PLASTIC/EPOXY package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
BSS138BK
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
IRLML2060TRPBF
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 4.8 A;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTR4101PT1G
NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
NTR4003NT3G
NTR4003NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A Drain Current, and 2 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.83W. The transistor comes in a SMALL OUTLINE package style suitable for surface mount assembly at temperatures up to 150°C.
NTR4502PT1G
NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
NTR4170NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;
NTR4503NT1G
NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
NTR4003N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
NTR4101PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
NTR4101PT1H
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JEDEC-95 Code: TO-236AB; Minimum DS Breakdown Voltage: 20 V;
NTR4170NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 3.2 A;
NTR4171PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;
NTR4502PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE;
NTR4502PT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 1.95 A;
NTR4502PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 30;
NTR4503NT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;
NTR4503NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
NTR4518NT1G
Small Signal Field-Effect Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
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