Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTR4101PT1H by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.4A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 1.25W at 150°C temperature.
Median Price
$0.293
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21
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$0.370
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$0.084
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$0.680
$0.269
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DigiKey
$0.700
$0.279
$0.190
Mouser Electronics
$0.780
$0.285
$0.191
Rochester
$0.152
$0.126
$0.112
Flip Electronics (Authorized)
Verical
$0.194
$0.192
Master Electronics
$0.124
Farnell
$0.216
$0.168
$0.148
Element14
$0.252
$0.247
Chip1Stop
$0.120
Vyrian
$0.115
Digiode
$0.118
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Chip Stock
NAC Semi
$0.195
IBS Electronics
$0.248
$0.172
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Semi Source
Elcom Components
Corphita
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Continental Prestige Electronics
$0.518
$0.265
$0.149
$0.140
Perfect Parts
QUARKTWIN TECHNOLOGY LTD
Infinite Electronics LLP (Excess)
Metaverse IC Inc.
Formix International (Excess)
Kulean Microsystems
Lixinc
SupplyDigital Components
TANS Electronics
Authorized Procurement Solutions
Problanco Electronics
A-Z Elektronik GmbH
Kepictronics
UHIMA Technologies
The use of plastic/epoxy as the package body material ensures durability and reliability for the small signal FET.
P-channel FETs offer low on-state resistance and high current carrying capability, making them suitable for various switching applications.
The built-in diode enhances the efficiency and performance of the FET in switching operations.
Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation.
Surface mount capability allows for easy and efficient assembly onto circuit boards.
The minimum breakdown voltage of 20V ensures protection against overvoltage conditions in the circuit.
With a high maximum drain current, this FET can handle heavy loads in the circuit.
The maximum power dissipation rating of 1.25W ensures the FET can handle high-power applications without overheating.
The high maximum operating temperature of 150°C allows for reliable operation in demanding environments.
The low on-resistance of the FET reduces power losses and improves efficiency in signal switching.
Small Signal Field Effect Transistors (FET) NTR4101PT1H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTR4101PT1H Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - SOT23 16/Sep/2016
PCN Assembly/Origin - Mold Compound 07/Sep/2019
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
2N7002
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
EU2B-YS303C
Idec
ROTARY SWITCH;
LM7805CT
Texas Instruments
LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
DS18B20Z+T&R
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
1N4148WS
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TM4C1294NCPDTI3
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
LL4148
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
Dc Components
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
Continental Device India
BSS138NE6433
Infineon Technologies
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
FDC8602
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
2N7002PW
NXP Semiconductors
2N7002PW by NXP Semiconductors is a N-CHANNEL FET with 60V DS breakdown voltage and 0.31A ID. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a max operating temperature of 150°C. The transistor has a built-in diode, GULL WING terminals, and operates in METAL-OXIDE SEMICONDUCTOR technology.
FDS9435A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G8;
FDS9945
FDS9945 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 3.5A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. The small outline package style and max operating temperature of 175°C make it suitable for various electronic designs.
BSS138NH6327
BSS138NH6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.23A Drain Current and 3.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.36W at temperatures ranging from -55 to 150 °C.
SI4401DDY-T1-GE3
SI4401DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 16.1A Drain Current, and 0.015 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C with GULL WING terminals in a RECTANGULAR package.
NDC7001C
NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS84
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Terminal Finish: MATTE TIN;
2N7002W
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): .34 A;
IRF9310TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
2N7002K
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V;
BSS138K-7
BSS138K-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.31A and operating temperature up to 150°C, it offers efficient performance in small outline packages.
TN2404K-T1-GE3
Vishay Intertechnology's TN2404K-T1-GE3 is a N-channel FET with 240V DS breakdown voltage, 0.2A max drain current, and 4 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.36W at 150°C.
BSS138BKAHZGT116
ROHM
ROHM BSS138BKAHZGT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS. Ideal for SWITCHING applications in small outline packages. Operating range from -55 to 150 °C with AEC-Q101 standard compliance.
FDS5670
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
BSS138LT1
Onsemi's BSS138LT1 is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C temperature range. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
General Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
Jiangsu Changjiang Electronics Technology
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI2371EDS-T1-GE3
SI2371EDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.8A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.045 ohm RDS(on) and 1.7W Power Dissipation in a SMALL OUTLINE package.
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NTR4101PT1G
NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
NTR4003NT1G
NTR4003NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150°C. Suitable for surface mount with GULL WING terminals.
NTR4003NT3G
NTR4003NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A Drain Current, and 2 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.83W. The transistor comes in a SMALL OUTLINE package style suitable for surface mount assembly at temperatures up to 150°C.
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
NTR4502PT1G
NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
NTR4170NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;
NTR4503NT1G
NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
NTR4003N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
NTR4101PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
NTR4170NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 3.2 A;
NTR4171PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;
NTR4502PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE;
NTR4502PT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 1.95 A;
NTR4502PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 30;
NTR4503NT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;
NTR4503NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
NTR4518NT1G
Small Signal Field-Effect Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
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