Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTR4003N by Onsemi is a small signal FET with N-channel polarity and built-in diode. It operates in enhancement mode for switching applications, with 30V breakdown voltage and 0.5A max drain current. This MOSFET has a 2 ohm on-resistance, Gull Wing terminals, and is surface mountable for compact designs.
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Provides durability and protection for the internal components of the transistor.
Allows for efficient switching capabilities in electronic circuits.
Simplifies circuit design and saves space by integrating a diode within the transistor package.
Optimized for switching applications, ensuring reliable performance in various electronic devices.
Facilitates easy installation on PCBs, making it suitable for automated production processes.
Provides a high level of voltage tolerance, enhancing the reliability of the transistor in different operating conditions.
Facilitates efficient placement on PCBs and allows for space-saving designs.
Enables secure soldering connections and enhances the overall stability of the transistor in the circuit.
Allows for precise control of the transistor's conductivity, leading to improved efficiency in switching applications.
Simplifies circuit connections and reduces the risk of errors during assembly.
Facilitates compact designs and enables high-density mounting on PCBs.
Ensures high performance and reliability in the transistor's operation, suitable for demanding applications.
Provides excellent thermal and electrical properties, enhancing the overall performance and longevity of the transistor.
Ensures reliable electrical connections and prevents corrosion, enhancing the durability of the transistor.
Sufficient current-carrying capacity for typical switching applications, ensuring stable operation.
Low on-resistance minimizes power losses and improves efficiency in switching operations.
Facilitates versatile mounting options and enables flexibility in circuit layout designs.
Small Signal Field Effect Transistors (FET) NTR4003N attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
NTR4003N Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
M24308/2-1F
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
RC0805FR-0710RL
Yageo
Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.
STM32H753BIT6
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM7805CT
Texas Instruments
LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
Excel (Suzhou) Semiconductor
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
STM32H753IIK6
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
2N2222A
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
SI2323DS-T1
Vishay Intertechnology
SI2323DS-T1 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has GULL WING terminals and can withstand temperatures from -55 to 150 °C.
FDN337N-F169
Onsemi
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
FDG8850NZ
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Qualification: Not Qualified;
FDN327N
FDN327N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.07 ohm On Resistance and can handle up to 0.46W power dissipation at 150°C.
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI2319DDS-T1-GE3
SI2319DDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 3.6A Drain Current, and 0.075ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C in a SMALL OUTLINE package.
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
FDC5612_NL
FDC5612_NL by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage and 4.3A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.6W. This small outline transistor with GULL WING terminals is designed for surface mount applications at temperatures up to 150°C.
FDG6301N
The Onsemi FDG6301N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.22A Drain Current, and 4 ohm On Resistance. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE at up to 150°C.
FDN304PZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
FDN357N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET for switching applications. It features 20V DS breakdown voltage, 2.6A max drain current, and 0.057ohm max on-resistance. With a small outline package and operating up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
SI4435DDY-T1-GE3
SI4435DDY-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V breakdown voltage and 11.4A drain current. Ideal for switching applications, it features a built-in diode, 0.024 ohm on-resistance, and operates in enhancement mode at up to 150°C.
2N7002DW
Weitron Technology
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
FDC6312P
FDC6312P by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 2.3A Drain Current, and 0.115 ohm On Resistance. With a max operating temperature of 150°C, this MOSFET is ideal for small outline packages in various electronic devices.
ZVP2106ASTOB
Zetex Plc
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
BSS123LT3
BSS123LT3 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
NDS351AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTR4101PT1G
NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
NTR4003NT1G
NTR4003NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150°C. Suitable for surface mount with GULL WING terminals.
NTR4003NT3G
NTR4003NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A Drain Current, and 2 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.83W. The transistor comes in a SMALL OUTLINE package style suitable for surface mount assembly at temperatures up to 150°C.
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
NTR4502PT1G
NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
NTR4170NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;
NTR4503NT1G
NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
NTR4101PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
NTR4101PT1H
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JEDEC-95 Code: TO-236AB; Minimum DS Breakdown Voltage: 20 V;
NTR4170NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 3.2 A;
NTR4171PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;
NTR4502PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE;
NTR4502PT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 1.95 A;
NTR4502PT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 30;
NTR4503NT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;
NTR4503NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
NTR4518NT1G
Small Signal Field-Effect Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
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