Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ZVP2106A by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage and 0.28A Drain Current. It is used in applications requiring low power dissipation, such as signal amplification in electronic circuits. The transistor operates in enhancement mode with a max temperature of 150°C, making it suitable for various small signal switching tasks.
Median Price
$1.320
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Suppliers In-Stock
36
In-Stock Inventory
1k+
Farnell
1+ parts
$0.745
100+ parts
$0.417
1k+ parts
$0.288
10k+ parts
$0.282
RS Americas
$0.790
$0.620
$0.490
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RS (Exports)
$1.850
Newark
$1.920
$0.904
$0.694
$0.584
Mouser Electronics
$1.940
$0.789
DigiKey
$1.950
$0.826
Element14
$1.960
$0.821
$0.631
$0.618
Arrow
$0.444
Verical
$0.368
Future Electronics
$0.390
$0.370
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Nova Conductors
$0.453
TME
$1.540
$0.625
$0.510
$0.416
Forefront Electronics and Design
$19.600
IBS Electronics
$0.550
$0.522
$0.472
Chip Stock
Vyrian
NAC Semi
Sensible Micro Corp
Micros
$0.395
Partservice
$0.878
$0.382
Micros sp.j. W. Kędra i J. Lic
$0.940
$0.409
Bristol Electronics
Atlantic Semiconductor
ECAB
ABC Electronics Ltd.
Component Sense
Electronic Expediters
R&J Components
ComSIT Distribution GmbH
ComSIT USA
Specialty Parts & Electronic Components, Inc. (S.P.E.C.)
ACDS - Activité Composants Distribution Service
Holdelec - ElecDif-Pro
Ashlea Components Ltd
Donberg Electronics Ltd
PC Components Company LLC
Semicontronic
$0.279
$0.272
$0.271
Modulus Dynamics
$0.434
Argo Parts USA
$0.445
$0.431
Advanced Electronics
$0.447
$0.425
Ampacity Inc.
$0.610
Continental Prestige Electronics
Aztec Data Supply Inc.
$1.460
Microchip USA
$5.655
Robosynatics
Lucentia Tech
Perfect Parts
Kepictronics
Authorized Procurement Solutions
Netroflash
$0.430
$0.421
GreenTree Electronics
The use of plastic/epoxy for the package body provides durability and protection for the transistor, making it a reliable choice for various applications.
The P-channel configuration allows for efficient current flow and control, making this transistor ideal for use in low power applications.
With a minimum breakdown voltage of 60V, this transistor can handle higher voltages without failing, ensuring reliable performance in demanding conditions.
The round package shape allows for easy integration and placement on circuit boards, making it a convenient choice for PCB design.
The wire terminal form simplifies the connection process and ensures a secure fit, making installation easier and more efficient.
The enhancement mode operation offers precise control over the transistor's conductivity, resulting in efficient and accurate signal amplification.
With a maximum drain current of 0.28A, this transistor can handle moderate power levels, making it suitable for a wide range of applications.
The three terminals provide flexibility in circuit design and connectivity options, allowing for versatile use in various electronic systems.
The maximum power dissipation of 0.7W ensures efficient heat dissipation, preventing overheating and prolonging the transistor's lifespan.
The cylindrical package style offers space-saving benefits and ease of mounting, making it suitable for compact electronic devices.
The use of metal-oxide semiconductor technology provides high performance and reliability, making this transistor a dependable choice for demanding applications.
With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring stable performance in challenging environments.
Made of silicon, this transistor element material offers excellent electrical properties and reliability, making it a durable and efficient choice for electronic circuits.
The matte tin terminal finish provides corrosion resistance and ensures a secure connection, enhancing the reliability and longevity of the transistor.
The low drain-source on resistance of 5 ohm minimizes power loss and improves efficiency, making this transistor suitable for low-power applications.
The bottom terminal position simplifies soldering and improves space utilization on the circuit board, making installation straightforward and hassle-free.
With a maximum time of 30 seconds at peak reflow temperature, this transistor can withstand soldering processes without compromising performance.
The peak reflow temperature of 260°C ensures reliable solder joints and proper bonding, making this transistor suitable for reflow soldering processes.
The maximum feedback capacitance of 20pF reduces the risk of signal distortion and improves high-frequency performance, making this transistor suitable for applications requiring precise signal control.
Small Signal Field Effect Transistors (FET) ZVP2106A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
ZVP2106A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-383-6931, 5961013836931
NIIN
013836931
PCN Assembly/Origin - Plating Site Add 24/Feb/2017
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148W-7-F
Multicomp Pro
1554216002
Molex
WIRE AND CABLE;
LL4148
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
LM358N
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM7805CT
Onsemi
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
2N2222A
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Microsemi
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99-7-F
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
NTF3055-100T1G
NTF3055-100T1G by Onsemi is a N-channel FET with 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 2.1W, this MOSFET has a peak reflow temperature of 260°C and matte tin terminal finish.
NDS332P
NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.
ZXMN6A07FTA
ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
FDN304PZ_NL
Fairchild Semiconductor's FDN304PZ_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Drain Current, 0.052 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
2N7002KT1G
2N7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.3W. This small outline transistor features a built-in diode and GULL WING terminals, suitable for surface mount configurations.
BSS314PEH6327XTSA1
Infineon Technologies
BSS314PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.5A ID. It features SINGLE configuration with built-in diode, 0.14 ohm RDS(on), and 11pF Crss. Ideal for applications requiring small signal amplification in compact electronic devices due to its ENHANCEMENT MODE operation and GULL WING terminals.
DMN6075S-7
DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
BSS123W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 100 V;
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
NTR4502PT1G
NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
FDC8602
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
AO3407A
Alpha & Omega Semiconductor
AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.
FDC6561AN
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Transistor Application: SWITCHING; No. of Elements: 2;
PMV250EPEAR
Nexperia
PMV250EPEAR by Nexperia is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.24 ohm Drain-Source On Resistance and 1.5A Drain Current, in a SMALL OUTLINE package with GULL WING terminals. AEC-Q101 and IEC-60134 compliant, it operates in ENHANCEMENT MODE for automotive and industrial electronics.
BS170
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY;
FDC2512
The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
FDN339AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;
NUD3124LT1G
NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
BSS123
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): .2 A; No. of Terminals: 3;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
ZVP2106A
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (Abs) (ID): .28 A; JESD-609 Code: e3;
ZVP2106ASTZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
ZVP2106ASTZ by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.7W at 150°C.
ZVP2106ASTOA
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Maximum Drain Current (ID): .28 A;
ZVP2106ASTOA by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 5 ohm RDS(on). Ideal for switching applications, it features SILICON transistor element, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
ZVP2106ASTOB
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
ZVP2106AM1
ZVP2106AM1 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Utilizes METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with GULL WING terminals.
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .28 A; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 235;
ZVP2110A
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (ID): .23 A; Transistor Element Material: SILICON;
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Time At Peak Reflow Temperature (s): 10; Reference Standard: CECC;
ZVP2110ASTZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING; No. of Elements: 1;
ZVP2110ASTZ by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). Utilizes ENHANCEMENT MODE tech with SILICON element in RECTANGULAR PLASTIC package.
ZVP2110ASTOA
ZVP2110ASTOA by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). With ENHANCEMENT MODE operation and SILICON material, it operates up to 200°C making it ideal for various electronic circuits.
ZVP2110ASTOB
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
ZVP2110AM1
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Qualification: Not Qualified;
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .23 A; No. of Terminals: 3; Terminal Position: SINGLE;
ZVP2106CSMTC
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
ZVP2106CSTOA
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .28 A; No. of Elements: 1; Package Shape: RECTANGULAR;
ZVP2106CSTOB
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSIP-W3; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
ZVP2106B
Tt Electronics Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): .28 A; Terminal Form: WIRE;
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