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ZVP2106ASTOB

Zetex Plc

ZVP2106ASTOB by Zetex Plc

ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.

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Overview

Looking to upgrade your electronic devices with top-quality components? Look no further than the ZVP2106ASTOB by Zetex Plc. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled performance in switching applications. Its P-channel configuration and enhancement mode operation ensure reliability and efficiency. With a minimum DS breakdown voltage of 60V and maximum drain current of 0.28A, this transistor is built to handle the most demanding tasks. Trust Zetex Plc to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the ZVP2106ASTOB and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower on-state resistance and higher current capabilities compared to N-channel transistors, making them efficient for switching applications.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without getting damaged, making it suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in this specific use case.

Maximum Operating Temperature: 200 °C

Capable of operating at high temperatures, making it suitable for a variety of environments and applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2106ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2106ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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