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2N7002L

Onsemi

2N7002L by Onsemi

Onsemi's 2N7002L is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A ID, and 7.5 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. Its small outline package and surface mount capability make it versatile for various electronic designs.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,617 parts In-Stock

1+ parts

$0.031

100+ parts

$0.029

1k+ parts

$0.026

10k+ parts

$0.026

1,617

$0.031

$0.029

$0.026

$0.026

Arrow

USA . 39,565 parts In-Stock

1+ parts

$0.140

100+ parts

$0.041

1k+ parts

$0.037

10k+ parts

$0.022

39,565

$0.140

$0.041

$0.037

$0.022

Farnell

UK . 4,104 parts In-Stock

1+ parts

$0.171

100+ parts

$0.049

1k+ parts

$0.033

10k+ parts

$0.027

4,104

$0.171

$0.049

$0.033

$0.027

Mouser Electronics

USA . 2,898,887 parts In-Stock

1+ parts

$0.210

100+ parts

$0.058

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-

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$0.026

2,898,887

$0.210

$0.058

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$0.026

Newark

USA . 109,537 parts In-Stock

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$0.210

100+ parts

$0.084

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$0.078

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109,537

$0.210

$0.084

$0.078

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Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.524

100+ parts

$0.477

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$0.430

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350

$0.524

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$0.430

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Flip Electronics (Authorized)

USA . 1,408,159 parts In-Stock

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DigiKey

USA . 208,159 parts In-Stock

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Verical

USA . 39,515 parts In-Stock

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$0.022

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39,515

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Master Electronics

USA . 27,000 parts In-Stock

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27,000

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Chip1Stop

Japan . 17 parts In-Stock

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$0.080

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Distributors (In-Stock)

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Digiode

USA . 1,587 parts In-Stock

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$0.029

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Mobius Materials

USA . 17,075 parts In-Stock

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$0.050

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$0.040

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$0.050

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Nova Conductors

Japan . 100 parts In-Stock

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$0.056

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100

$0.056

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Bristol Electronics

USA . 5,245 parts In-Stock

1+ parts

$0.188

100+ parts

$0.094

1k+ parts

$0.037

10k+ parts

$0.028

5,245

$0.188

$0.094

$0.037

$0.028

Martec Srl

Italy . 4,989,000 parts In-Stock

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Vyrian

USA . 971,555 parts In-Stock

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Flip Electronics

USA . 208,159 parts In-Stock

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Chip Stock

USA . 114,500 parts In-Stock

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IBS Electronics

USA . 111,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 44,448 parts In-Stock

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ComSIT USA

USA . 44,448 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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TME

Poland . 6,207 parts In-Stock

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$0.034

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$0.034

ACDS - Activité Composants Distribution Service

France . 3,879 parts In-Stock

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Dan-Mar Components

USA . 3,879 parts In-Stock

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Demsay Elektronik

Türkiye . 2,899 parts In-Stock

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$0.051

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2,899

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Manoshevitz Elec. Sales

Israel . 1,500 parts In-Stock

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VNN

France . 953 parts In-Stock

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Microfarads

USA . 445 parts In-Stock

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445

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Prism Electronics

USA . 297 parts In-Stock

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Euro-Tech

UK . 11 parts In-Stock

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Resion

USA . 10 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 982,812 parts In-Stock

1+ parts

$0.020

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$0.020

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$0.019

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982,812

$0.020

$0.020

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Ampacity Inc.

Singapore . 913,448 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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Corphita

USA . 524 parts In-Stock

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524

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Argo Parts USA

USA . 4,602 parts In-Stock

1+ parts

$0.054

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$0.052

4,602

$0.054

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$0.052

Modulus Dynamics

Lithuania . 18 parts In-Stock

1+ parts

$0.062

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$0.061

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$0.059

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18

$0.062

$0.061

$0.059

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Continental Prestige Electronics

USA . 100,844 parts In-Stock

1+ parts

$0.217

100+ parts

$0.093

1k+ parts

$0.042

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$0.028

100,844

$0.217

$0.093

$0.042

$0.028

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.524

100+ parts

$0.477

1k+ parts

$0.430

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350

$0.524

$0.477

$0.430

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

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$0.544

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$0.544

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Perfect Parts

USA . 1,562,916 parts In-Stock

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Formix International (Excess)

India . 242,551 parts In-Stock

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RC Electronics

USA . 146,485 parts In-Stock

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$0.060

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$0.050

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Eastek

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,723 parts In-Stock

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Glotronic Ltd.

UK . 18,906 parts In-Stock

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Lixinc

USA . 13,588 parts In-Stock

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Allen Electronics Distributors

USA . 8,850 parts In-Stock

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$0.087

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$0.062

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8,850

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Metaverse IC Inc.

Canada . 7,344 parts In-Stock

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TANS Electronics

Latvia . 7,339 parts In-Stock

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Kulean Microsystems

USA . 6,305 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Kepictronics

USA . 5,344 parts In-Stock

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SupplyDigital Components

Austria . 4,657 parts In-Stock

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Assy Fe

Spain . 4,000 parts In-Stock

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Supply Digital

USA . 1,634 parts In-Stock

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1,634

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Cyclops Electronics Ltd (Excess)

UK . 1,490 parts In-Stock

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1,490

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Netroflash

USA . 1,000 parts In-Stock

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$0.055

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$0.053

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$0.052

1,000

-

$0.055

$0.053

$0.052

Problanco Electronics

Mexico . 629 parts In-Stock

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629

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Robosynatics

Brazil . 450 parts In-Stock

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$0.134

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$0.134

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$0.134

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$0.134

$0.134

$0.134

Lucentia Tech

USA . 450 parts In-Stock

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$0.134

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$0.134

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$0.134

450

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$0.134

$0.134

$0.134

UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 2N7002L by Onsemi, a leading manufacturer in the industry of Small Signal Field Effect Transistors. This N-CHANNEL transistor with a built-in diode is perfect for switching applications, offering exceptional performance and efficiency. Its compact design and robust construction make it ideal for a wide range of electronic devices. Trust Onsemi to deliver cutting-edge technology that exceeds expectations, providing you with the value and benefits you need for your next project. Elevate your designs with the 2N7002L and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast response times and low power consumption.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 60 V

Suitable for applications requiring higher voltage capabilities.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhances control over the transistor's conductivity, allowing for precise switching.

No. of Terminals: 3

Simplifies connection to the circuit, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Conserves space on the PCB and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability for various electronic applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation.

Transistor Element Material: SILICON

Provides stability and consistent performance over a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Suitable for operation in cold environments without compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures reliable and secure connections on the PCB.

Maximum Drain Current (ID): 0.115 A

Capable of handling moderate current loads in the circuit.

Maximum Drain-Source On Resistance: 7.5 ohm

Provides low resistance for efficient current flow in the circuit.

Terminal Position: DUAL

Allows for versatile mounting options on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly process.

Peak Reflow Temperature °C: 260

Withstands high temperature reflow processes during PCB assembly.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance minimizes signal distortion in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-533-3628, 5961015333628

NIIN

015333628

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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