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ZVP2110ASTZ

Diodes Incorporated

ZVP2110ASTZ by Diodes Incorporated

ZVP2110ASTZ by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). Utilizes ENHANCEMENT MODE tech with SILICON element in RECTANGULAR PLASTIC package.

Median Price

$0.414

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 61 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

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$0.414

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750

$0.414

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Chip Stock

USA . 23,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 7,890 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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ComSIT USA

USA . 4,000 parts In-Stock

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Component Sense

UK . 1,532 parts In-Stock

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Vyrian

USA . 61 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 100 parts In-Stock

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$0.406

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$0.389

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100

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$0.389

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Continental Prestige Electronics

USA . 2,361 parts In-Stock

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$0.414

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$0.406

2,361

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Argo Parts USA

USA . 374 parts In-Stock

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$0.414

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$0.402

374

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Corohmni

South Africa . 140 parts In-Stock

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$0.434

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Aztec Data Supply Inc.

USA . 171 parts In-Stock

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$0.839

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Component Stockers USA

USA . 18,696 parts In-Stock

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$4.340

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AZTECH Wire

Italy . 384 parts In-Stock

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$16.333

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Semicontronic

India . 61 parts In-Stock

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$21.050

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$20.524

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$20.418

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61

$21.050

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$20.418

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Advanced Electronics

New Zealand . 61 parts In-Stock

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Overview

Unlock the power of efficient switching with the ZVP2110ASTZ by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated ensures top-notch quality and reliability in all their products. Ideal for a variety of applications, this P-CHANNEL transistor offers enhanced performance and durability. Experience seamless operation and improved efficiency with the ZVP2110ASTZ, providing unmatched value and benefits to customers seeking advanced technology in a compact package. Elevate your electronic designs with Diodes Incorporated and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good thermal conductivity and electrical insulation, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: P-CHANNEL

P-Channel FETs have low on-state resistance and high input impedance, making them suitable for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle higher voltage levels without damage, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and space-saving layout in circuit designs.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low leakage current, improving efficiency in switching applications.

No. of Terminals: 3

3 terminals provide the necessary connections for control and signal input, ensuring proper operation in the circuit.

Package Style (Meter): IN-LINE

In-line package style allows for easy integration into linear configurations and space-conscious layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high efficiency and low power consumption, ideal for switching applications.

Transistor Element Material: SILICON

Silicon material provides high reliability and performance in a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte Tin finish ensures good solderability and corrosion resistance for a long service life.

Maximum Drain Current (ID): 0.23 A

With a high maximum drain current rating, this FET can handle high current loads without overheating or damage.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance ensures minimal power loss and efficient switching behavior in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, making it suitable for automated soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance of 260°C ensures reliability and durability in manufacturing and operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2110ASTZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2110ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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