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ZVP2110AM1

Diodes Incorporated

ZVP2110AM1 by Diodes Incorporated

ZVP2110AM1 by Diodes Inc. is a P-CHANNEL FET with 100V DS breakdown voltage, 0.23A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a plastic/epoxy package, gull wing terminals, and operates in enhancement mode. Perfect for compact designs requiring high-performance transistors.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

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600

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Vyrian

USA . 325 parts In-Stock

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325

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Distributors (Availability)

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Corohmni

South Africa . 143 parts In-Stock

1+ parts

$0.524

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143

$0.524

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Aztec Data Supply Inc.

USA . 542 parts In-Stock

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$1.563

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542

$1.563

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AZTECH Wire

Italy . 709 parts In-Stock

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$17.019

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709

$17.019

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Continental Prestige Electronics

USA . 4,228 parts In-Stock

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Argo Parts USA

USA . 3,656 parts In-Stock

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Kepictronics

USA . 1,960 parts In-Stock

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1,960

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Advanced Electronics

New Zealand . 600 parts In-Stock

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600

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Enhance your electronic projects with the ZVP2110AM1 by Diodes Incorporated. Crafted with precision and expertise, this P-CHANNEL small signal Field Effect Transistor offers reliable performance in switching applications. With a minimum DS breakdown voltage of 100V and a maximum drain current of 0.23A, this transistor provides outstanding functionality in a compact package. Trust in Diodes Incorporated's reputation for quality and innovation, and elevate your designs with the ZVP2110AM1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material ensures durability and reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL design allows for efficient switching applications and control over current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 100 V

High DS Breakdown Voltage of 100V makes this transistor suitable for applications requiring high power handling capabilities.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing assembly time.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology ensures high efficiency and performance in various applications.

Maximum Drain Current (ID): 0.23 A

The maximum drain current of 0.23 A allows for handling of moderate power levels in applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2110AM1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2110AM1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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