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IRF9310TRPBF-1

Infineon Technologies

IRF9310TRPBF-1 by Infineon Technologies

Infineon's IRF9310TRPBF-1 is a P-channel FET with 30V breakdown voltage, 20A max drain current, and 0.0046 ohm on-resistance. Ideal for enhancement mode operation in applications requiring high power efficiency and compact design. Features gull wing terminals in a small outline package for surface mount assembly.

Median Price

$0.376

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.376

100+ parts

$0.357

1k+ parts

$0.357

10k+ parts

-

2,000

$0.376

$0.357

$0.357

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 892 parts In-Stock

1+ parts

$0.357

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-

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892

$0.357

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Vyrian

USA . 1,746 parts In-Stock

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-

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1,746

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Nova Conductors

Japan . 76 parts In-Stock

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76

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Distributors (Availability)

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Semicontronic

India . 1,858 parts In-Stock

1+ parts

$0.320

100+ parts

$0.312

1k+ parts

$0.310

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1,858

$0.320

$0.312

$0.310

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Ampacity Inc.

Singapore . 1,512 parts In-Stock

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$0.320

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1,512

$0.320

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Corphita

USA . 470 parts In-Stock

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$0.338

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470

$0.338

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.376

100+ parts

$0.357

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$0.357

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2,000

$0.376

$0.357

$0.357

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Modulus Dynamics

Lithuania . 24,247 parts In-Stock

1+ parts

$0.844

100+ parts

$0.810

1k+ parts

$0.776

10k+ parts

-

24,247

$0.844

$0.810

$0.776

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Aztec Data Supply Inc.

USA . 1,629 parts In-Stock

1+ parts

$1.317

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1,629

$1.317

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Corohmni

South Africa . 497 parts In-Stock

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$1.483

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497

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,327 parts In-Stock

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Argo Parts USA

USA . 449 parts In-Stock

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449

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Robosynatics

Brazil . 300 parts In-Stock

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$0.033

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$0.033

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$0.033

300

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$0.033

$0.033

$0.033

Lucentia Tech

USA . 300 parts In-Stock

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$0.033

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$0.033

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$0.033

300

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$0.033

$0.033

$0.033

Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Transform your electronics with the Infineon Technologies IRF9310TRPBF-1 small signal field effect transistor. Manufactured by industry leader Infineon Technologies, this P-channel FET offers top-notch quality and reliability for a wide range of applications. With its single configuration and built-in diode, this transistor provides unparalleled performance and efficiency. Say goodbye to downtime and hello to seamless operation with the IRF9310TRPBF-1. Upgrade your devices today and experience the difference Infineon Technologies can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow and better performance in certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

Saves space on the circuit board and simplifies the overall design by integrating a diode into the transistor package.

Surface Mount: YES

Enables easy and reliable integration into surface mount PCB designs, saving assembly time and cost.

Minimum DS Breakdown Voltage: 30 V

Provides a high level of reliability and protection against voltage spikes in the circuit.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering onto the PCB, making it suitable for automated assembly processes.

Transistor Element Material: SILICON

Offers high performance, reliability, and efficiency compared to other materials, making it a popular choice for semiconductor devices.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF9310TRPBF-1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.0046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

IRF9310TRPBF-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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