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NDC7001C

Onsemi

NDC7001C by Onsemi

NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.

Median Price

$0.190

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 40,182 parts In-Stock

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$0.116

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$0.116

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40,182

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Farnell

UK . 4,386 parts In-Stock

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$0.303

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$0.120

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4,386

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Element14

Singapore . 7,777 parts In-Stock

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$0.600

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$0.304

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Mouser Electronics

USA . 39,492 parts In-Stock

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$0.810

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$0.325

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$0.223

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39,492

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$0.163

DigiKey

USA . 8,502 parts In-Stock

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$0.810

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$0.324

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Future Electronics

Canada . 396,000 parts In-Stock

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Verical

USA . 43,500 parts In-Stock

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Master Electronics

USA . 43,500 parts In-Stock

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$0.149

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Arrow

USA . 18,000 parts In-Stock

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Chip1Stop

Japan . 7,884 parts In-Stock

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$0.261

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Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

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RS (Exports)

UK . 2,760 parts In-Stock

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Rochester

USA . 231 parts In-Stock

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$0.185

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$0.137

231

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Distributors (In-Stock)

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Digiode

USA . 504 parts In-Stock

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Greenchips

USA . 1,294 parts In-Stock

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$0.137

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$0.130

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$0.124

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$0.112

1,294

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$0.112

Nova Conductors

Japan . 500 parts In-Stock

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$0.341

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500

$0.341

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Maritex

Poland . 1,350 parts In-Stock

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$0.390

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$0.234

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$0.189

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$0.390

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TME

Poland . 863 parts In-Stock

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$0.780

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$0.246

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$0.196

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863

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Voyager Components

USA . 5 parts In-Stock

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NAC Semi

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Chip Stock

USA . 296,600 parts In-Stock

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Vyrian

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IBS Electronics

USA . 45,000 parts In-Stock

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$19.060

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Cyclops Electronics Ltd

UK . 12,856 parts In-Stock

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Component Sense

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Bristol Electronics

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Atlantic Semiconductor

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Sensible Micro Corp

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SIE Connect GmbH - GreenChips

Germany . 1,294 parts In-Stock

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Anansix

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Pegasus Components GmbH

Germany . 380 parts In-Stock

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ComSIT Distribution GmbH

Germany . 88 parts In-Stock

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Amalfi Trading

USA . 30 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 79,607 parts In-Stock

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$0.097

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Semicontronic

India . 65,565 parts In-Stock

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$0.095

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$0.094

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Corphita

USA . 2,779 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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Argo Parts USA

USA . 1,960 parts In-Stock

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$0.184

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$0.178

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.191

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$0.181

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Netroflash

USA . 2,000 parts In-Stock

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$0.341

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$0.334

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Continental Prestige Electronics

USA . 5,078 parts In-Stock

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$0.455

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$0.252

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$0.153

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Aztec Data Supply Inc.

USA . 3,286 parts In-Stock

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$1.663

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RC Electronics

USA . 68,909 parts In-Stock

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$0.190

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$0.170

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GreenTree Electronics

Israel . 66,000 parts In-Stock

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Perfect Parts

USA . 61,292 parts In-Stock

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Kepictronics

USA . 30,226 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 15,616 parts In-Stock

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iodParts Technologies Inc.

India . 14,825 parts In-Stock

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Benley Electronics

USA . 9,000 parts In-Stock

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TANS Electronics

Latvia . 7,394 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Authorized Procurement Solutions

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Formix International (Excess)

India . 3,000 parts In-Stock

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Supply Digital

USA . 2,884 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,630 parts In-Stock

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Problanco Electronics

Mexico . 2,301 parts In-Stock

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Kulean Microsystems

USA . 1,894 parts In-Stock

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SupplyDigital Components

Austria . 1,702 parts In-Stock

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UHIMA Technologies

Türkiye . 481 parts In-Stock

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Allen Electronics Distributors

USA . 220 parts In-Stock

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Robosynatics

Brazil . 30 parts In-Stock

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USA . 30 parts In-Stock

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Overview

Unlock the power of small signal field-effect transistors with the NDC7001C by Onsemi. Built with the highest quality materials and craftsmanship, this versatile component offers a wide range of applications in switching technology. With separate N-channel and P-channel elements featuring built-in diodes, this transistor delivers enhanced performance and efficiency. Whether you're designing consumer electronics or industrial equipment, the NDC7001C provides unmatched value, reliability, and precision. Upgrade your projects with Onsemi's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in different circuit configurations, making it versatile for various applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode allows for efficient circuit design and the separate elements provide additional control over the transistor's behavior.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient switching operations.

Surface Mount: YES

Being surface mountable makes this transistor easy to integrate onto circuit boards, saving space and simplifying the assembly process.

Maximum DS Breakdown Voltage: 60 V

With a high breakdown voltage of 60V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for easy control of the transistor's conductivity, enhancing its performance in various circuit configurations.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption, making this transistor energy efficient.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can function reliably even in high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDC7001C attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.51 A

Maximum Drain Current (ID):

.51 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDC7001C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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