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2N7002PW

NXP Semiconductors

2N7002PW by NXP Semiconductors

2N7002PW by NXP Semiconductors is a N-CHANNEL FET with 60V DS breakdown voltage and 0.31A ID. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a max operating temperature of 150°C. The transistor has a built-in diode, GULL WING terminals, and operates in METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 100 parts In-Stock

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$0.158

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Newark

USA . 3,070 parts In-Stock

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$0.186

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$0.064

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$0.041

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$0.186

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Mouser Electronics

USA . 6,694 parts In-Stock

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$0.051

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6,694

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$0.080

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DigiKey

USA . 1,682 parts In-Stock

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Element14

Singapore . 3,070 parts In-Stock

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Verical

USA . 2,309 parts In-Stock

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TME

Poland . 2,309 parts In-Stock

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$0.130

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$0.068

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$0.044

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2,309

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Digiode

USA . 382 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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Chip Stock

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ComSIT Distribution GmbH

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ComSIT USA

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DigiKey Marketplace

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Bristol Electronics

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Vyrian

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Cyclops Electronics Ltd

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HZD GmbH

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LWI Electronics Inc

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LIBRA Elektronik GmbH

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Microfarads

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Bas Electronics GmbH & Co. KG

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Ampacity Inc.

Singapore . 2,818 parts In-Stock

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Semicontronic

India . 2,754 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 2,386 parts In-Stock

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Argo Parts USA

USA . 349 parts In-Stock

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Netroflash

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 870 parts In-Stock

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870

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AZTECH Wire

Italy . 8,589 parts In-Stock

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Aztec Data Supply Inc.

USA . 489 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

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GreenTree Electronics

Israel . 3,320 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Computer Components Inc. - USA

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Supply Digital

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Lixinc

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Formix International (Excess)

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Lucentia Tech

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Overview

Enhance your electronic projects with the reliable 2N7002PW Small Signal Field Effect Transistor by NXP Semiconductors. Designed for switching applications, this N-CHANNEL transistor offers a minimum DS breakdown voltage of 60V and a maximum drain current of 0.31A. With its small outline package shape and gull wing terminals, it is perfect for surface mount applications. Trust in NXP's expertise in semiconductor technology to deliver high-quality components that guarantee optimal performance and efficiency. Upgrade your designs with the 2N7002PW and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Suitable for applications where N-channel transistors are required, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for specific applications where diode functionality is needed.

Transistor Application: SWITCHING

Optimized for fast switching applications, making it ideal for use in electronic circuits that require rapid on/off transitions.

Surface Mount: YES

Easily mountable on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

Withstands high voltages, ensuring stability and protection against voltage spikes.

Package Shape: RECTANGULAR

Compact design for efficient use of space on the circuit board.

Terminal Form: GULL WING

Facilitates easy soldering and secure connection on the PCB.

Operating Mode: ENHANCEMENT MODE

Operates in enhancement mode, providing high output current and low on-state resistance.

No. of Terminals: 3

Simplifies the connection and integration of the transistor in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002PW attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.31 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002PW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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