Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FDS4672A by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It has 11A Drain Current, 0.013 ohm On Resistance, and operates at max temp of 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
Median Price
$0.641
Lifecycle Status
Suppliers In-Stock
27
In-Stock Inventory
1k+
Adafruit Industries
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$1.410
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Element14
$1.443
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Future Electronics
$0.305
Arrow
$0.500
Chip1Stop
$0.551
Verical
$0.590
Rochester
$0.384
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Digiode
$0.528
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$0.777
TME
$1.260
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IBS Electronics
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NAC Semi
$1.050
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Connect4Technologies Inc.
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$10.987
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Metaverse IC Inc.
RC Electronics
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CPlus Electronics
QUARKTWIN TECHNOLOGY LTD
Perfect Parts
Authorized Procurement Solutions
Problanco Electronics
SupplyDigital Components
Kulean Microsystems
TANS Electronics
UHIMA Technologies
Supply Digital
Kepictronics
This material provides durability and protection for the internal components of the transistor, making it a reliable choice for various applications.
N-channel transistors are known for their high efficiency and low power consumption, making this transistor an energy-efficient option for switching applications.
The built-in diode allows for better control of the current flow, enhancing the performance and reliability of the transistor in switching applications.
Designed specifically for switching applications, this transistor offers fast response times and high efficiency, making it ideal for use in a variety of electronic devices.
The surface mount capability of this transistor allows for easy and convenient installation on circuit boards, saving space and simplifying the overall design.
With a minimum breakdown voltage of 40V, this transistor can handle higher voltages without the risk of damage, ensuring long-term reliability in different operating conditions.
The rectangular shape of the package provides a compact and space-saving design, making it easy to integrate into various electronic devices without taking up too much room.
The gull wing terminal form offers secure connections and easy soldering during the assembly process, ensuring reliable performance and durability.
Small Signal Field Effect Transistors (FET) FDS4672A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDS4672A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Logo 17/Aug/2017 Mold Compound 12/Dec/2007
PCN Assembly/Origin - Wafer Fab 02/Aug/2020
PCN Packaging - Mult Devices 24/Oct/2017 Mult MSL1 Pkg Rev 20/Dec/2018
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Weitron Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358AN
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
Synsemi
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
Diotec Semiconductor Ag
ROHM
2N2222A
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Vishay Intertechnology
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
MBRS130LT3G
Onsemi
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
1N4148
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
SI9945BDY-T1-GE3
Vishay Intertechnology's SI9945BDY-T1-GE3 is a N-channel FET with 60V DS breakdown voltage and 5.3A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. Suitable for surface mount assembly with gull wing terminals and matte tin finish.
2N7002K
Kodenshi Auk
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
MMBF170-7-F
Diodes Incorporated
Diodes Inc.'s MMBF170-7-F is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
2N7002DW
Onsemi's 2N7002DW is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A max drain current, and 7.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a peak reflow temp of 260C and -55 to 150C operating range.
NDS7002A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
2N7002LT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE;
Secos
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Maximum Power Dissipation Ambient: .2 W;
2N7000
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .3 A; JESD-30 Code: O-PBCY-W3; Terminal Position: BOTTOM;
BSS123
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 6 ohm;
IRLHS6376TRPBF
Infineon Technologies
IRLHS6376TRPBF by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. With 0.082 ohm max on-resistance and 6.6W power dissipation, it offers reliable performance for various electronic designs.
BSS138P,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Time At Peak Reflow Temperature (s): 40;
S-LBSS84LT1G
Leshan Radio
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
BC548B
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel;
SI2356DS-T1-GE3
SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
BS170
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: 5 ohm; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
FDN327N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .46 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .07 ohm;
NDS332P
NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.
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FDS4935BZ
FDS4935BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE at up to 150°C.
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
FDS4685
FDS4685 by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 8.2A and an Operating Temperature up to 150°C. With a small outline package style and surface mount capability, it offers high performance in compact designs.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
FDS4675_F085
FDS4675_F085 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 11A Drain Current, and 0.013 ohm On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 175°C and comes in an 8-terminal GULL WING package.
FDS4675-F085
FDS4675-F085 by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11A Drain Current, 0.013 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it offers high performance in a compact design.
FDS4435BZ
FDS4435BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, 0.02 ohm On Resistance, and 345pF Feedback Capacitance.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
FDS4672A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
FDS4435BZ_F085
FDS4435BZ_F085 by Fairchild Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8.8A Drain Current, 0.02 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high-performance transistors.
FDS4435BZ-F085
FDS4435BZ-F085 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current, ideal for SWITCHING applications. It features a RECTANGULAR package shape, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150°C. With 0.02 ohm On Resistance and 345pF Feedback Capacitance, it offers efficient performance in various electronic circuits.
FDS4897C
FDS4897C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications, with max drain current of 6.2A and on-resistance of 0.029 ohm. This MOSFET has a breakdown voltage of 40V and can handle up to 2W power dissipation, suitable for surface mount designs at temperatures up to 150°C.
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
FDS4435A
FDS4435A by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 9A Drain Current, 0.017 ohm On Resistance, and can withstand temperatures from -55 to 150 °C.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; JESD-609 Code: e3;
FDS4435
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; Maximum Operating Temperature: 175 Cel;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 30 V; Terminal Position: DUAL;
FDS4435_NL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
FDS4435A_NL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G8;
FDS4672AF011
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel;
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