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FDC6506P

Onsemi

FDC6506P by Onsemi

FDC6506P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 30V, Max Drain Current of 1.8A, and Max Power Dissipation of 0.96W. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.

Median Price

$1.181

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.926

100+ parts

$1.830

1k+ parts

$1.830

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1,000

$1.926

$1.830

$1.830

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Rochester

USA . 24 parts In-Stock

1+ parts

-

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$0.436

1k+ parts

$0.362

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$0.323

24

-

$0.436

$0.362

$0.323

Distributors (In-Stock)

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Digiode

USA . 2,419 parts In-Stock

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$0.339

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$0.339

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Nova Conductors

Japan . 50 parts In-Stock

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$0.788

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$0.788

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ACDS - Activité Composants Distribution Service

France . 4,868 parts In-Stock

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Chip Stock

USA . 2,850 parts In-Stock

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Vyrian

USA . 496 parts In-Stock

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496

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Sensible Micro Corp

USA . 349 parts In-Stock

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349

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A2Z Electronics, Inc.

USA . 200 parts In-Stock

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200

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Quantum Digital Technology

USA . 75 parts In-Stock

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75

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Bristol Electronics

USA . 26 parts In-Stock

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Prism Electronics

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NexGen Digital

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Distributors (Availability)

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Semicontronic

India . 412 parts In-Stock

1+ parts

$0.303

100+ parts

$0.295

1k+ parts

$0.294

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412

$0.303

$0.295

$0.294

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Decca Corp

Germany . 211 parts In-Stock

1+ parts

$0.303

100+ parts

$0.297

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$0.294

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211

$0.303

$0.297

$0.294

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Corphita

USA . 971 parts In-Stock

1+ parts

$0.321

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971

$0.321

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Corohmni

South Africa . 238 parts In-Stock

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$0.357

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238

$0.357

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Component Stockers USA

USA . 515 parts In-Stock

1+ parts

$0.360

100+ parts

$0.340

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515

$0.360

$0.340

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Ampacity Inc.

Singapore . 53 parts In-Stock

1+ parts

$0.660

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53

$0.660

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Aranea Global

USA . 100 parts In-Stock

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$0.772

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$0.741

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100

$0.772

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$0.741

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Continental Prestige Electronics

USA . 4,134 parts In-Stock

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$0.788

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$0.772

4,134

$0.788

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$0.772

Argo Parts USA

USA . 3,754 parts In-Stock

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$0.788

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$0.788

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Aztec Data Supply Inc.

USA . 750 parts In-Stock

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$1.194

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750

$1.194

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.926

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$1.830

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$1.830

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$1.926

$1.830

$1.830

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 84,712 parts In-Stock

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$0.800

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$0.730

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$0.710

84,712

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$0.730

$0.710

Perfect Parts

USA . 79,850 parts In-Stock

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Kepictronics

USA . 71,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,936 parts In-Stock

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CPlus Electronics

USA . 18,000 parts In-Stock

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SupplyDigital Components

Austria . 5,904 parts In-Stock

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TANS Electronics

Latvia . 4,383 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 3,871 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Kulean Microsystems

USA . 2,294 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,946 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,297 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,200 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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Supply Digital

USA . 637 parts In-Stock

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GreenTree Electronics

Israel . 86 parts In-Stock

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iodParts Technologies Inc.

India . 3 parts In-Stock

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Overview

Discover the innovative FDC6506P from Onsemi, a top-quality P-Channel Small Signal Field Effect Transistor with built-in diode for enhanced switching applications. Designed with cutting-edge technology, this transistor offers reliability and efficiency, making it ideal for various electronic devices. Experience seamless performance and superior functionality with the FDC6506P, providing customers with value and benefits that exceed expectations. Trust Onsemi to deliver exceptional products that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for a wide range of applications.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for efficient current flow and control, enhancing overall performance.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration offers versatility and functionality, making it useful for various circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this product provides a robust barrier against voltage spikes, increasing reliability.

Package Shape: RECTANGULAR

The rectangular shape offers a compact and space-saving design, ideal for applications where board space is limited.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control and regulation of current flow, improving efficiency.

No. of Elements: 2

With two elements, this transistor provides increased functionality and flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 1.8 A

With a maximum drain current of 1.8A, this product can handle high current loads, making it suitable for power applications.

No. of Terminals: 6

The six terminals offer multiple connection points, enabling versatile integration into different circuit configurations.

Maximum Power Dissipation (Abs): 0.96 W

The maximum power dissipation of 0.96W ensures reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting, ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology provides high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without sacrificing performance.

Transistor Element Material: SILICON

Silicon material offers stability and efficiency, ensuring consistent performance over the product's lifespan.

Minimum Operating Temperature: -55 °C

The minimum operating temperature of -55°C allows this transistor to function reliably in cold environments.

Terminal Finish: Tin (Sn)

The tin terminal finish provides corrosion resistance and excellent solderability, ensuring long-term stability in use.

Maximum Drain-Source On Resistance: 0.17 ohm

The low drain-source on resistance of 0.17 ohms reduces power loss and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting and connection options, enabling easy integration into different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds at peak temperature ensures quick and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C guarantees secure solder joints and reliable connections, even in demanding soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC6506P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

1.8 A

Maximum Drain Current (ID):

1.8 A

Maximum Drain-Source On Resistance:

.17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC6506P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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