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FDC6327C

Onsemi

FDC6327C by Onsemi

FDC6327C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 2.7A, on-resistance of 0.08 ohm, and operates in enhancement mode for switching applications. The package is SMD, with 6 terminals in Gull Wing form, rated up to 150°C.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

41

In-Stock Inventory

1k+

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Arrow

USA . 19 parts In-Stock

1+ parts

$0.424

100+ parts

$0.338

1k+ parts

$0.291

10k+ parts

$0.267

19

$0.424

$0.338

$0.291

$0.267

Mouser Electronics

USA . 13,292 parts In-Stock

1+ parts

$1.370

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$0.569

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$0.403

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$1.370

$0.569

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DigiKey

USA . 694 parts In-Stock

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$1.370

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$0.569

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$0.403

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$1.370

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Adafruit Industries

USA . 500 parts In-Stock

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$1.406

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$1.336

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$1.406

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$1.336

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Element14

Singapore . 48,000 parts In-Stock

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Farnell

UK . 45,000 parts In-Stock

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Newark

USA . 42,000 parts In-Stock

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Future Electronics

Canada . 39,000 parts In-Stock

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Verical

USA . 24,160 parts In-Stock

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$0.400

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Rochester

USA . 24,160 parts In-Stock

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$0.385

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$0.320

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Chip1Stop

Japan . 9,000 parts In-Stock

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RS (Exports)

UK . 3,220 parts In-Stock

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Master Electronics

USA . 3,000 parts In-Stock

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$0.522

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Distributors (In-Stock)

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Nova Conductors

Japan . 80 parts In-Stock

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Digiode

USA . 2,536 parts In-Stock

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Freelance Electronics

USA . 3,000 parts In-Stock

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$0.376

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$0.380

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Maritex

Poland . 328 parts In-Stock

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$1.220

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$0.202

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$0.178

328

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TME

Poland . 2,982 parts In-Stock

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$0.571

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$0.372

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$0.345

IBS Electronics

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NAC Semi

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Chip Stock

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Tesla II Electronics Inc.

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LIBRA Elektronik GmbH

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Semi Source

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Component Sense

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Prism Electronics

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Ampacity Inc.

Singapore . 34,093 parts In-Stock

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$0.169

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Component Stockers USA

USA . 173,028 parts In-Stock

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$0.190

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Corphita

USA . 1,482 parts In-Stock

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Continental Prestige Electronics

USA . 3,994 parts In-Stock

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$0.284

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Argo Parts USA

USA . 2,855 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,762 parts In-Stock

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Modulus Dynamics

Lithuania . 16,322 parts In-Stock

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Corohmni

South Africa . 718 parts In-Stock

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$1.057

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.406

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$1.336

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$1.336

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$1.406

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$1.336

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 27,930 parts In-Stock

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Robosynatics

Brazil . 20,232 parts In-Stock

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$1.067

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$1.045

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$1.045

Lucentia Tech

USA . 20,232 parts In-Stock

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$1.067

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Lixinc

USA . 8,648 parts In-Stock

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TANS Electronics

Latvia . 7,146 parts In-Stock

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SupplyDigital Components

Austria . 7,088 parts In-Stock

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iodParts Technologies Inc.

India . 6,540 parts In-Stock

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Problanco Electronics

Mexico . 4,688 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

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Epart123

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 813 parts In-Stock

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Overview

Upgrade your electronic devices with the FDC6327C by Onsemi, a high-quality Small Signal Field Effect Transistor. Manufactured by Onsemi, this FET offers unparalleled performance and reliability for switching applications. With N-Channel and P-Channel configurations, built-in diode elements, and a maximum drain current of 2.7 A, this transistor provides exceptional value and benefits to customers looking for efficient and versatile solutions. Trust Onsemi for cutting-edge technology that delivers superior results in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

The availability of both N-channel and P-channel types allows for versatile use in various applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode provides added functionality and convenience in circuit design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast and efficient performance in electronic circuits.

Surface Mount: YES

The surface mount feature enhances the ease of PCB assembly and saves space in electronic devices.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V ensures reliable operation in different voltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape simplifies PCB layout and mounting of the transistor in various applications.

Terminal Form: GULL WING

The gull wing terminal form enables easy soldering and reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for better control and efficiency in switching applications.

No. of Elements: 2

With two elements in one package, this transistor offers dual functionality in a compact design.

Maximum Drain Current (Abs) (ID): 2.7 A

The high maximum drain current of 2.7A allows for handling of heavy loads in circuits.

No. of Terminals: 6

The 6 terminals provide multiple connection options for versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.96 W

The maximum power dissipation of 0.96W ensures stable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology used in this transistor provides high performance and reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent performance and durability in electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides reliable solder joints and ensures long-term performance.

Maximum Drain-Source On Resistance: 0.08 ohm

The low drain-source on resistance of 0.08 ohm minimizes power loss and improves efficiency.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options in different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables safe and efficient soldering processes for the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC6327C attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

2.7 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC6327C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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