Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ZXMS6004FFTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and built-in diode for switching applications. It's a small outline package with matte tin finish, suitable for enhancement mode operation in automotive electronics conforming to AEC-Q101 standard.
Median Price
$0.473
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Newark
$0.378
RS Americas
$0.810
$0.640
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Mouser Electronics
$1.460
$0.585
$0.449
DigiKey
$1.510
$0.630
$0.448
Farnell
$0.445
$0.416
Element14
$0.723
$0.714
Future Electronics
$0.500
Arrow
$0.287
Verical
Avnet
$0.292
Maritex
$0.245
$0.187
Ozdisan Elektronik
$0.357
Nova Conductors
$0.519
Component Electronics Inc.
$0.770
$0.580
TME
$1.250
$0.616
$0.525
IBS Electronics
$0.575
NAC Semi
$0.830
Vyrian
Chip Stock
Rutronik
$0.461
LIBRA Elektronik GmbH
Dark Horse Electronics
Cyclops Electronics Ltd
Martec Srl
Inventory MP
ComSIT Distribution GmbH
Bristol Electronics
Rebound Electronics
North Shore Components
ComSIT USA
Flex Direct, LLC
Speed Components Ltd
Sensible Micro Corp
Mil-Aero Solutions, Inc.
Ampacity Inc.
$0.264
Semicontronic
$0.276
$0.269
$0.268
Component Stockers USA
$0.370
$0.290
$0.250
$0.300
Argo Parts USA
$0.471
$0.457
Aranea Global
$0.509
$0.488
Modulus Dynamics
$0.600
Advanced Electronics
$0.632
$0.601
Corohmni
$0.826
Allen Electronics Distributors
$0.890
$0.620
Aztec Data Supply Inc.
$1.410
Microchip USA
$2.366
Continental Prestige Electronics
$0.609
$0.418
Perfect Parts
Authorized Procurement Solutions
Infinite Electronics LLP (Excess)
RC Electronics
$0.540
$0.490
$0.480
GreenTree Electronics
$0.478
Epart123
Robosynatics
$0.611
$0.598
Lucentia Tech
Assy Fe
Futuretech Components
iodParts Technologies Inc.
$0.431
Kepictronics
Lixinc
XScomponents
Computer Components Inc. - USA
S.R.D Solutions
This material provides durability and allows for easy handling of the transistor.
N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making them suitable for high-speed switching applications.
The built-in diode allows for protection against voltage spikes and reverse current flow, enhancing the reliability of the transistor.
Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.
Surface mount technology allows for easy and compact installation on a circuit board, saving space and facilitating automated assembly processes.
With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, making it suitable for a wide range of applications.
The rectangular package shape allows for easy placement and orientation on a circuit board, facilitating assembly and ensuring proper connection.
The flat terminal form ensures a secure and stable connection, minimizing the risk of disconnection or signal loss.
Enhancement mode operation enables precise control of the transistor's conductivity, allowing for efficient switching and power management.
Having 3 terminals allows for proper signal input, output, and control, ensuring optimal performance in a circuit.
The small outline package style saves space on the circuit board, making it suitable for compact electronic devices and applications with limited space.
Metal-oxide semiconductor technology offers high reliability, low power consumption, and fast switching speeds, making it ideal for various electronic applications.
Silicon is a widely used semiconductor material known for its high performance, reliability, and compatibility with different manufacturing processes, ensuring a high-quality product.
Matte tin finish provides corrosion resistance and ensures a reliable electrical connection, enhancing the longevity and performance of the transistor.
With a low on-resistance of 0.6 ohm, this transistor minimizes power loss and heat generation, improving efficiency and performance in switching applications.
The dual terminal position allows for flexible and convenient installation on a circuit board, accommodating various design requirements and ensuring proper electrical connections.
The maximum time at peak reflow temperature of 30 seconds ensures safe and reliable soldering during assembly, preventing damage to the transistor.
The peak reflow temperature of 260°C ensures proper soldering and connection, meeting industry standards for lead-free and RoHS-compliant manufacturing processes.
Compliance with AEC-Q101 automotive quality standards ensures high reliability, durability, and performance, making this transistor suitable for automotive applications and harsh environments.
Small Signal Field Effect Transistors (FET) ZXMS6004FFTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
ZXMS6004FFTA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Part Marking Update 25/Sep/2015
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
Digitron Semiconductors
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
Sensitron Semiconductor
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Crystalonics
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138K-7
Diodes Incorporated
BSS138K-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.31A and operating temperature up to 150°C, it offers efficient performance in small outline packages.
FDC6321C
FDC6321C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements in plastic/epoxy package. It operates in enhancement mode for switching applications, with max power dissipation of 0.9W and max operating temp of 150°C. Featuring dual terminals and low on-resistance at 0.45 ohm, it's ideal for compact electronic designs requiring efficient power management.
2N7000
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
NX7002AK,215
NXP Semiconductors
NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.
ZXMP10A13FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BS170G
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
BS250P
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;
NDS0605_NL
Fairchild Semiconductor
Fairchild Semiconductor's NDS0605_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.18A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a RECTANGULAR PLASTIC package with GULL WING terminals and operates up to 150°C.
NTR5198NLT1G
NTR5198NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 2.2A max drain current, and 0.205 ohm RDS(on). It's used in small outline packages for applications requiring high power dissipation up to 1.5W at 150°C, making it ideal for enhancement mode operations in various electronic circuits.
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
T2N7002AK,LM
Toshiba
Toshiba T2N7002AK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, it has 1W power dissipation and max temp of 150°C.
2N7000TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
NDS9407
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7000_D74Z
2N7000_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A Drain Current and 5 ohm On Resistance. Suitable for low-power circuits due to its 0.4W Power Dissipation and 150°C Operating Temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
BSS84
Lite-on Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
2N7002T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
BSS138W
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Additional Features: LOGIC LEVEL COMPATIBLE;
BS170/D26Z
BS170/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A ID. It operates in ENHANCEMENT MODE, has 3 terminals, and 5 ohm Drain-Source On Resistance. Widely used in electronic circuits for amplification and switching applications due to its SILICON element material and THROUGH-HOLE terminal form.
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ZXMS6004FFQTA
ZXMS6004FFQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and -40 to 150 °C operating temp. Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE tech and built-in diode.
ZXMS6004SGTA
ZXMS6004SGTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and built-in diode for switching applications. It features GULL WING terminals, ENHANCEMENT MODE operation, and AEC-Q101 compliance for automotive use.
ZXMS6005SGTA
ZXMS6005SGTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.25 ohm Drain-Source On Resistance, and 1.6W Power Dissipation. Ideal for ENHANCEMENT MODE operations in small outline packages with GULL WING terminals.
ZXMS6005DT8TA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.13 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
ZXMS6006SGTA
ZXMS6006SGTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage and 0.125 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode with 1.6W power dissipation. The small outline package features gull wing terminals and can withstand up to 150°C operating temperature.
ZXMS6004DT8TA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.13 W; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
ZXMS6006DT8TA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.13 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Shape: RECTANGULAR;
ZXMS6004FFQ-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
ZXMS6004SGQTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .6 ohm; No. of Terminals: 4; Package Style (Meter): SMALL OUTLINE;
ZXMS6005SGQTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4;
ZXMS6001N3QTA
N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Maximum Power Dissipation Ambient: 1.5 W; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 1;
ZXMS6004DT8QTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; No. of Elements: 2;
ZXMS6005DT8QTA
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
ZXMS6006DT8QTA
ZXMS6006DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and 150°C max operating temp. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
ZXMS6006SGQTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
ZXMS66004FFTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Terminal Finish: MATTE TIN;
ZXMS66004SGTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;
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