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ZXMS6004SGTA

Diodes Incorporated

ZXMS6004SGTA by Diodes Incorporated

ZXMS6004SGTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and built-in diode for switching applications. It features GULL WING terminals, ENHANCEMENT MODE operation, and AEC-Q101 compliance for automotive use.

Median Price

$0.856

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Distrelec

Netherlands . 252 parts In-Stock

1+ parts

$0.806

100+ parts

$0.599

1k+ parts

-

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252

$0.806

$0.599

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Newark

USA . 307 parts In-Stock

1+ parts

$0.906

100+ parts

$0.480

1k+ parts

$0.451

10k+ parts

-

307

$0.906

$0.480

$0.451

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Mouser Electronics

USA . 6,281 parts In-Stock

1+ parts

$0.910

100+ parts

$0.480

1k+ parts

$0.442

10k+ parts

-

6,281

$0.910

$0.480

$0.442

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DigiKey

USA . 52 parts In-Stock

1+ parts

$0.910

100+ parts

$0.513

1k+ parts

$0.459

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52

$0.910

$0.513

$0.459

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Farnell

UK . 450 parts In-Stock

1+ parts

$1.137

100+ parts

$0.638

1k+ parts

$0.419

10k+ parts

$0.398

450

$1.137

$0.638

$0.419

$0.398

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.432

10k+ parts

$0.370

6,000

-

-

$0.432

$0.370

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.431

10k+ parts

$0.370

6,000

-

-

$0.431

$0.370

Element14

Singapore . 1,677 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.606

10k+ parts

$0.601

1,677

-

$0.674

$0.606

$0.601

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mobius Materials

USA . 42,876 parts In-Stock

1+ parts

$0.370

100+ parts

$0.300

1k+ parts

-

10k+ parts

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42,876

$0.370

$0.300

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Nova Conductors

Japan . 69 parts In-Stock

1+ parts

$0.584

100+ parts

-

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69

$0.584

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TME

Poland . 1 parts In-Stock

1+ parts

$0.850

100+ parts

$0.473

1k+ parts

$0.429

10k+ parts

-

1

$0.850

$0.473

$0.429

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IBS Electronics

USA . 137,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.856

10k+ parts

$0.715

137,000

-

-

$0.856

$0.715

NAC Semi

USA . 79,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.220

10k+ parts

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79,000

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-

$1.220

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Vyrian

USA . 12,724 parts In-Stock

1+ parts

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12,724

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Rutronik

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.427

10k+ parts

$0.365

10,000

-

-

$0.427

$0.365

Chip Stock

USA . 2,983 parts In-Stock

1+ parts

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2,983

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ComSIT Distribution GmbH

Germany . 1,118 parts In-Stock

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1,118

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ComSIT USA

USA . 1,118 parts In-Stock

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1,118

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Global Solutions Electronics Company

USA . 756 parts In-Stock

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756

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 54 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

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54

$0.320

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Ampacity Inc.

Singapore . 13,044 parts In-Stock

1+ parts

$0.366

100+ parts

-

1k+ parts

-

10k+ parts

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13,044

$0.366

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Semicontronic

India . 12,579 parts In-Stock

1+ parts

$0.366

100+ parts

$0.357

1k+ parts

$0.355

10k+ parts

-

12,579

$0.366

$0.357

$0.355

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Argo Parts USA

USA . 4,017 parts In-Stock

1+ parts

$0.457

100+ parts

-

1k+ parts

-

10k+ parts

$0.443

4,017

$0.457

-

-

$0.443

Continental Prestige Electronics

USA . 3,709 parts In-Stock

1+ parts

$0.457

100+ parts

-

1k+ parts

-

10k+ parts

$0.448

3,709

$0.457

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-

$0.448

Bastille Electronics

Australia . 117 parts In-Stock

1+ parts

$0.584

100+ parts

$0.555

1k+ parts

$0.527

10k+ parts

$0.520

117

$0.584

$0.555

$0.527

$0.520

Aztec Data Supply Inc.

USA . 1,174 parts In-Stock

1+ parts

$0.610

100+ parts

-

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1,174

$0.610

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.824

100+ parts

$0.758

1k+ parts

$0.710

10k+ parts

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300

$0.824

$0.758

$0.710

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Perfect Parts

USA . 50,396 parts In-Stock

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50,396

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Lixinc

USA . 10,739 parts In-Stock

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10,739

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.451

10k+ parts

-

1,000

-

-

$0.451

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Overview

Enhance your electronic designs with the ZXMS6004SGTA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. The ZXMS6004SGTA falls under the category of Small Signal Field Effect Transistors (FET), making it ideal for switching applications. With a minimum DS Breakdown Voltage of 60V and a maximum Drain-Source On Resistance of 0.6 ohm, this transistor offers exceptional performance. Its compact size and surface mount capability make it easy to integrate into various projects. Trust Diodes Incorporated to deliver cutting-edge technology that brings value and efficiency to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability, making it a good choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer low on-resistance and high switching speeds, making them ideal for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design, reducing the need for additional components and saving space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

The surface mount capability allows for easy integration into compact electronic devices, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient PCB layout and placement, maximizing space utilization and enhancing thermal performance.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability, ensuring reliable connections during operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control over the switching operation, providing precise and efficient performance in various applications.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in circuit design and can accommodate multiple connections for added functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-saving and lightweight, making it ideal for portable and compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high efficiency and low power consumption, making this transistor an energy-efficient choice.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-term stability and consistent operation in various conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring strong and durable connections during assembly.

Maximum Drain-Source On Resistance: 0.6 ohm

With a low on-resistance of 0.6 ohm, this transistor minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: DUAL

Dual terminal position offers flexibility in connection options, allowing for versatile circuit configurations.

Case Connection: SOURCE

The source connection simplifies the circuit design and enhances performance, ensuring reliable operation in various applications.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum reflow time at peak temperature ensures proper soldering and component integrity during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature assembly processes, ensuring reliability and durability.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 standards, this transistor meets stringent automotive industry requirements, ensuring high quality and reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6004SGTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6004SGTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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