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ZXMS6004DT8TA

Diodes Incorporated

ZXMS6004DT8TA by Diodes Incorporated

ZXMS6004DT8TA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage and 0.6 ohm max on-resistance, ideal for switching applications. It features separate configuration, 2 elements, and operates in enhancement mode. With a max power dissipation of 2.13W and operating temp up to 125°C, it's suitable for various surface mount designs.

Median Price

$0.418

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 226,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.438

10k+ parts

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226,000

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-

$0.438

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Arrow

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.397

10k+ parts

$0.385

23,000

-

-

$0.397

$0.385

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 51 parts In-Stock

1+ parts

$0.532

100+ parts

-

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51

$0.532

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NAC Semi

USA . 19,000 parts In-Stock

1+ parts

-

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$0.775

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19,000

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-

$0.775

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Vyrian

USA . 18,012 parts In-Stock

1+ parts

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18,012

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Greenchips

USA . 1,755 parts In-Stock

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1,755

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Distributors (Availability)

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Ampacity Inc.

Singapore . 50,360 parts In-Stock

1+ parts

$0.332

100+ parts

-

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50,360

$0.332

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Semicontronic

India . 42,460 parts In-Stock

1+ parts

$0.332

100+ parts

$0.324

1k+ parts

$0.322

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42,460

$0.332

$0.324

$0.322

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Continental Prestige Electronics

USA . 301 parts In-Stock

1+ parts

$0.525

100+ parts

-

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10k+ parts

$0.514

301

$0.525

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$0.514

Argo Parts USA

USA . 216 parts In-Stock

1+ parts

$0.525

100+ parts

-

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10k+ parts

$0.509

216

$0.525

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-

$0.509

Corohmni

South Africa . 746 parts In-Stock

1+ parts

$0.549

100+ parts

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746

$0.549

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.020

100+ parts

$0.928

1k+ parts

$0.836

10k+ parts

-

1,000

$1.020

$0.928

$0.836

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Aztec Data Supply Inc.

USA . 81 parts In-Stock

1+ parts

$1.050

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81

$1.050

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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Lixinc

USA . 7,753 parts In-Stock

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7,753

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.521

1k+ parts

$0.505

10k+ parts

$0.495

2,000

-

$0.521

$0.505

$0.495

Kepictronics

USA . 920 parts In-Stock

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920

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Overview

Enhance your electronic projects with the ZXMS6004DT8TA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors designed for switching applications. With its N-channel configuration and enhancement mode operation, this transistor offers reliable performance and efficiency. The ZXMS6004DT8TA is perfect for a wide range of applications, providing customers with high-value and superior benefits for their projects. Upgrade your designs with the best in class technology from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient signal amplification and switching capabilities in electronic circuits.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltage applications, making it suitable for a variety of electronic devices.

Maximum Power Dissipation (Abs): 2.13 W

Allows for the handling of higher power levels without overheating, increasing reliability.

Maximum Drain-Source On Resistance: 0.6 ohm

Low on-resistance helps in minimizing power losses and improving efficiency in switching applications.

Maximum Operating Temperature: 125 °C

Operates effectively at high temperatures, making it suitable for use in demanding environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6004DT8TA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.0009 A

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6004DT8TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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