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ZXMS6006DT8TA

Diodes Incorporated

ZXMS6006DT8TA by Diodes Incorporated

ZXMS6006DT8TA by Diodes Incorporated is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and 2.13W power dissipation. Ideal for switching applications in enhancement mode, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$2.318

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$0.770

100+ parts

-

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-

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2

$0.770

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DigiKey

USA . 20,742 parts In-Stock

1+ parts

$3.760

100+ parts

$1.714

1k+ parts

$1.295

10k+ parts

$1.137

20,742

$3.760

$1.714

$1.295

$1.137

Mouser Electronics

USA . 2,845 parts In-Stock

1+ parts

$3.760

100+ parts

$1.720

1k+ parts

-

10k+ parts

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2,845

$3.760

$1.720

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Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.875

10k+ parts

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21,000

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$0.875

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$1.063

100+ parts

-

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450

$1.063

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Maritex

Poland . 3 parts In-Stock

1+ parts

$3.272

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3

$3.272

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Chip Stock

USA . 30,000 parts In-Stock

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30,000

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Vyrian

USA . 6,685 parts In-Stock

1+ parts

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6,685

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$1.420

10k+ parts

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1,000

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-

$1.420

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ACDS - Activité Composants Distribution Service

France . 862 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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862

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ComSIT Distribution GmbH

Germany . 769 parts In-Stock

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769

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ComSIT USA

USA . 769 parts In-Stock

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769

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Greenchips

USA . 719 parts In-Stock

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719

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,687 parts In-Stock

1+ parts

$0.740

100+ parts

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6,687

$0.740

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Semicontronic

India . 6,143 parts In-Stock

1+ parts

$0.740

100+ parts

$0.722

1k+ parts

$0.718

10k+ parts

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6,143

$0.740

$0.722

$0.718

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Continental Prestige Electronics

USA . 2,914 parts In-Stock

1+ parts

$1.063

100+ parts

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1k+ parts

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10k+ parts

$1.042

2,914

$1.063

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-

$1.042

Argo Parts USA

USA . 605 parts In-Stock

1+ parts

$1.063

100+ parts

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605

$1.063

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Corohmni

South Africa . 409 parts In-Stock

1+ parts

$1.100

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409

$1.100

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Aztec Data Supply Inc.

USA . 1,170 parts In-Stock

1+ parts

$1.310

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1,170

$1.310

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Component Stockers USA

USA . 11,656 parts In-Stock

1+ parts

$2.010

100+ parts

$1.320

1k+ parts

$0.970

10k+ parts

$0.910

11,656

$2.010

$1.320

$0.970

$0.910

Microchip USA

USA . 2,957 parts In-Stock

1+ parts

$6.434

100+ parts

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2,957

$6.434

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Perfect Parts

USA . 4,480 parts In-Stock

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4,480

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QUARKTWIN TECHNOLOGY LTD

USA . 3,553 parts In-Stock

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3,553

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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Cyclops Electronics Ltd (Excess)

UK . 862 parts In-Stock

1+ parts

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100+ parts

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862

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Overview

Unlock the power of cutting-edge technology with the ZXMS6006DT8TA by Diodes Incorporated. Crafted with precision and expertise, this small signal field-effect transistor offers unmatched quality and reliability. Perfect for switching applications, its N-channel configuration with built-in diode ensures seamless performance. With a minimum DS breakdown voltage of 60V and maximum power dissipation of 2.13W, this transistor delivers exceptional value and efficiency. Trust Diodes Incorporated to provide innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for portable and rugged applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher switching speeds compared to P-channel FETs, making them ideal for high-performance switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode helps protect the transistor from voltage spikes, increasing its reliability in various circuit configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can rapidly turn on and off, making it ideal for power control and amplification in electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and enabling high-density circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the transistor's conductivity, allowing precise switching and modulation of currents in electronic circuits.

Maximum Power Dissipation (Abs): 2.13 W

With a high power dissipation rating, this FET can handle moderate to high load currents without overheating, ensuring reliable operation.

Maximum Drain-Source On Resistance: 0.125 ohm

Low ON-resistance reduces power losses and improves efficiency in switching applications, making this FET suitable for high-performance circuit design.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation, ensuring reliable operation in demanding environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6006DT8TA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6006DT8TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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