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NDS331N_NL

Fairchild Semiconductor

NDS331N_NL by Fairchild Semiconductor

NDS331N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.3A Drain Current, 0.16 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.5W and can withstand temperatures up to 150°C.

Median Price

$1.901

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Adafruit Industries

USA . 5,000 parts In-Stock

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$1.901

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$1.806

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$1.806

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5,000

$1.901

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Digiode

USA . 924 parts In-Stock

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Vyrian

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$1.571

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Corphita

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$9.867

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Overview

Elevate your electronic designs with the NDS331N_NL by Fairchild Semiconductor. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled quality and reliability. Ideal for switching applications, this N-channel transistor boasts a single configuration with a built-in diode for seamless operation. With a maximum drain current of 1.3A and a low on-resistance of 0.16 ohm, this transistor delivers exceptional performance. Whether you're a hobbyist or a seasoned professional, the NDS331N_NL provides value, efficiency, and innovation in every use. Experience the difference today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and resistance to external elements, making it suitable for various applications.

Polarity or Channel Type:

N-CHANNEL - Offers efficient operation in switching applications due to its channel type.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space with the built-in diode feature.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds and low power consumption.

Surface Mount:

YES - Enables easy and secure mounting on circuit boards for convenient assembly.

Minimum DS Breakdown Voltage:

20 V - Ensures reliable performance even at higher voltages for added safety.

Package Shape:

RECTANGULAR - Allows for efficient placement on circuit boards and space-saving design.

Terminal Form:

GULL WING - Facilitates easy soldering and connection to circuit boards for quick installation.

Operating Mode:

ENHANCEMENT MODE - Offers enhanced control over the switching operation for improved efficiency.

Maximum Drain Current (Abs) (ID):

1.3 A - Provides ample current capacity for various applications without the risk of overloading.

No. of Terminals:

3 - Simplifies circuit connections and reduces complexity in wiring.

Maximum Power Dissipation (Abs):

0.5 W - Handles power dissipation effectively, ensuring reliable performance under varying conditions.

Package Style (Meter):

SMALL OUTLINE - Features a compact design suitable for space-constrained applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Offers high-performance characteristics and efficient operation for versatile applications.

Maximum Operating Temperature:

150 °C - Can withstand high operating temperatures without compromising performance.

Transistor Element Material:

SILICON - Provides excellent durability and reliability for extended product life.

Terminal Finish:

MATTE TIN - Enhances solderability and ensures secure connections for stable performance.

Maximum Drain-Source On Resistance:

0.16 ohm - Offers low on-resistance for efficient current flow and reduced power losses.

Terminal Position:

DUAL - Allows for flexible installation options and easy integration into various circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS331N_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.3 A

Maximum Drain Current (ID):

1.3 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS331N_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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