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NTR2101PT1G

Onsemi

NTR2101PT1G by Onsemi

NTR2101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 8V DS Breakdown Voltage, 3.7A Drain Current, and 0.052ohm On Resistance. With ENHANCEMENT MODE operation, it's ideal for small outline packages in high-temp environments up to 150°C.

Median Price

$0.151

Lifecycle Status

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42

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1k+

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Arrow

USA . 846 parts In-Stock

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Mouser Electronics

USA . 68,873 parts In-Stock

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DigiKey

USA . 3,917 parts In-Stock

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Flip Electronics (Authorized)

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Element14

Singapore . 63,988 parts In-Stock

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Farnell

UK . 43,802 parts In-Stock

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Newark

USA . 36,000 parts In-Stock

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Verical

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Master Electronics

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Rochester

USA . 5,950 parts In-Stock

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Chip1Stop

Japan . 1,528 parts In-Stock

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Digiode

USA . 1,517 parts In-Stock

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Maritex

Poland . 530 parts In-Stock

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530

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TME

Poland . 1,430 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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NAC Semi

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India . 54,014 parts In-Stock

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Ampacity Inc.

Singapore . 56,354 parts In-Stock

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South Africa . 220 parts In-Stock

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Component Stockers USA

USA . 678,758 parts In-Stock

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Argo Parts USA

USA . 4,785 parts In-Stock

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Continental Prestige Electronics

USA . 25,762 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 660 parts In-Stock

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Modulus Dynamics

Lithuania . 1,241 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 1,352,405 parts In-Stock

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Perfect Parts

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USA . 58,818 parts In-Stock

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Mexico . 7,860 parts In-Stock

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Brazil . 6,515 parts In-Stock

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USA . 6,515 parts In-Stock

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Latvia . 3,781 parts In-Stock

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Overview

Unlock the power of efficient switching with the NTR2101PT1G by Onsemi. Crafted with precision and quality, this P-CHANNEL Small Signal Field Effect Transistor (FET) boasts a single configuration with a built-in diode for enhanced performance. Ideal for a variety of applications, this transistor offers customers superior value with its high maximum drain current and low on-resistance. Trust Onsemi to deliver reliability and innovation in every product, making the NTR2101PT1G a smart choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and ensures a long lifespan for the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high efficiency and low power consumption, making them a great choice for battery-operated devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and better protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Being surface-mountable makes installation easier and saves space on the PCB.

Minimum DS Breakdown Voltage: 8 V

With a high breakdown voltage, this transistor can withstand higher voltage levels without damage.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and alignment on the circuit board.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and secure solder joints for reliable connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer lower leakage current and improved performance.

Maximum Drain Current (Abs): 3.7 A

The high maximum drain current allows for greater power handling capabilities.

No. of Terminals: 3

With 3 terminals, this transistor can be easily integrated into a variety of circuit designs.

Maximum Power Dissipation (Abs): 0.96 W

The high power dissipation rating ensures efficient heat dissipation for continuous operation.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB and is ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high-speed switching and low power consumption.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in a wide range of environments.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance in various applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and corrosion resistance.

Maximum Drain-Source On Resistance: 0.052 ohm

With low on-resistance, this transistor minimizes power loss and improves efficiency.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout options.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum reflow time ensures proper solder reflow and reliable connections.

Peak Reflow Temperature °C: 260

The high peak reflow temperature guarantees proper solder melting and a strong bond between the transistor and the PCB.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR2101PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.052 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR2101PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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