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NTR2101PT1

Onsemi

NTR2101PT1 by Onsemi

NTR2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.7A ID, and 0.052 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals, operates up to 150 °C, and has a power dissipation of 0.96W.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 339,000 parts In-Stock

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Flip Electronics

USA . 339,000 parts In-Stock

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USA . 141,930 parts In-Stock

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Vyrian

USA . 5,274 parts In-Stock

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Semtec, LLC

USA . 1,257 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 841 parts In-Stock

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RC Electronics

USA . 54,000 parts In-Stock

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Kulean Microsystems

USA . 8,372 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,488 parts In-Stock

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Problanco Electronics

Mexico . 5,361 parts In-Stock

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TANS Electronics

Latvia . 4,862 parts In-Stock

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SupplyDigital Components

Austria . 3,383 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Corohmni

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Overview

Unlock the power of innovation with the NTR2101PT1 by Onsemi, a high-quality P-Channel Small Signal Field Effect Transistor perfect for switching applications. With a robust design and built-in diode, this transistor offers unparalleled reliability and efficiency. Ideal for enhancing performance in a variety of electronic devices, this product provides customers with a competitive edge in today's fast-paced market. Experience the value and benefits that Onsemi brings to the table with the NTR2101PT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a negative voltage is required in the channel, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode within the transistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for high-speed switching applications, making it ideal for use in circuits that require fast response times.

Surface Mount: YES

Easily mounted on PCBs, saving space and allowing for efficient assembly in compact electronic devices.

Minimum DS Breakdown Voltage: 8 V

Provides a safe operating voltage range, protecting the transistor from damage due to excessive voltage.

Maximum Drain Current (Abs) (ID): 3.7 A

Capable of handling high current loads, making it suitable for applications requiring power amplification.

Maximum Power Dissipation (Abs): 0.96 W

Efficiently dissipates heat generated during operation, ensuring reliability under load.

Maximum Drain-Source On Resistance: 0.052 ohm

Low on-resistance leads to minimal power loss and improved efficiency in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in environments where heat dissipation is crucial.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR2101PT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.052 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR2101PT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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