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LBSS84LT1G

Leshan Radio

LBSS84LT1G by Leshan Radio

LBSS84LT1G by Leshan Radio is a P-CHANNEL small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.13A and a max power dissipation of 0.225W.

Median Price

$0.984

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Adafruit Industries

USA . 350 parts In-Stock

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Chip Stock

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Vyrian

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Freddi Giovanni

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Dan-Mar Components

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LWI Electronics Inc

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

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Decca Corp

Germany . 7,554 parts In-Stock

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$0.840

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$0.823

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$0.815

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Aztec Data Supply Inc.

USA . 76 parts In-Stock

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$0.894

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Advanced Electronics

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AZTECH Wire

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Perfect Parts

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Argo Parts USA

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Lucentia Tech

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

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Modulus Dynamics

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Futuretech Components

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Overview

Experience the exceptional quality and superior performance of the LBSS84LT1G by Leshan Radio. As a leading manufacturer in the industry, Leshan Radio brings you this P-CHANNEL Small Signal Field Effect Transistor with a single built-in diode for switching applications. Offering a breakthrough in functionality, this product is designed to enhance your efficiency and productivity. With a minimum DS Breakdown Voltage of 50V and maximum Drain Current of 0.13A, the LBSS84LT1G ensures reliable performance even in demanding conditions. Its compact rectangular shape and gull wing terminals make it easy to install, while its high temperature resistance up to 150°C guarantees durability. Don't settle for anything less than the best - choose the LBSS84LT1G for unparalleled value and outstanding results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

Offers efficient current flow and is commonly used in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Designed for fast switching operations, making it ideal for various electronic devices.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, enhancing the overall reliability of the product.

Minimum DS Breakdown Voltage: 50 V

Can handle relatively high voltage levels, ensuring reliable operation in different voltage environments.

Package Shape: RECTANGULAR

Allows for efficient placement on circuit boards and maximizes space utilization.

Terminal Form: GULL WING

Enables efficient soldering and connection to circuit boards, ensuring a secure electrical connection.

Operating Mode: ENHANCEMENT MODE

Provides better control over the transistor's conductivity, improving overall performance.

Maximum Drain Current (Abs) (ID): 0.13 A

Can handle a maximum current of 0.13 A, suitable for various low-power applications.

No. of Terminals: 3

Offers simple connectivity options and makes the transistor easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.225 W

Efficiently dissipates heat and ensures stable operation under different load conditions.

Package Style (Meter): SMALL OUTLINE

Compact design allows for space-saving integration into electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability, key characteristics for demanding applications.

Maximum Operating Temperature: 150 °C

Operates reliably in high-temperature environments, increasing the versatility of the product.

Transistor Element Material: SILICON

Silicon-based construction ensures high performance and durability for long-term use.

Maximum Drain-Source On Resistance: 10 ohm

Low on-resistance ensures efficient power handling and minimal voltage drops during operation.

Terminal Position: DUAL

Provides flexibility in circuit design and enables easy connection to external components.

Technical Specifications

Small Signal Field Effect Transistors (FET) LBSS84LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Leshan Radio

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.13 A

Maximum Drain Current (ID):

.13 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

LBSS84LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Leshan Radio

Leshan Radio Company, Ltd.(LRC) is a well-known electronic company located in Sichuan province, the center area of China western development. Head office and initial factories are in Leshan, a famous historic and cultural city. New factories and R&D centers are in Chengdu, capital city of Sichuan Province. Since its establishment in 1971, LRC has dedicated half a century to the R&D and manufacturing of semiconductor devices and has grown into a group company with several subsidiary and JV companies

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