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LBSS123LT1G

Leshan Radio

LBSS123LT1G by Leshan Radio

LBSS123LT1G by Leshan Radio is a N-CHANNEL FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.17A Drain Current and 6 ohm On Resistance. Ideal for small signal applications requiring high voltage tolerance and low power dissipation in compact designs.

Median Price

$0.908

Lifecycle Status

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1k+

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Adafruit Industries

USA . 350 parts In-Stock

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$0.908

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$0.863

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$0.863

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350

$0.908

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K-1 Technologies

USA . 3,167,358 parts In-Stock

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Vyrian

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Flip Electronics

USA . 9,500 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.908

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$0.863

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$0.863

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Aztec Data Supply Inc.

USA . 4,118 parts In-Stock

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$1.427

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Perfect Parts

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iodParts Technologies Inc.

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Argo Parts USA

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Bastille Electronics

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Lucentia Tech

USA . 10 parts In-Stock

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Overview

Upgrade your electronic devices with the LBSS123LT1G by Leshan Radio, a top-quality N-CHANNEL Small Signal Field Effect Transistor. Designed for maximum performance and reliability, this transistor features a single configuration with a built-in diode, making it perfect for a wide range of applications. With a high breakdown voltage of 100V and a low on resistance of 6 ohm, this transistor offers exceptional value and efficiency to customers. Trust Leshan Radio to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the product, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Offers efficient signal handling and performance in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit designs by integrating a diode, reducing the need for additional components.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating automated manufacturing processes.

Minimum DS Breakdown Voltage: 100 V

Enables reliable operation in various voltage applications, making it versatile and adaptable.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment in circuit layouts.

Terminal Form: GULL WING

Simplifies soldering and connection processes, enhancing overall ease of use.

Operating Mode: ENHANCEMENT MODE

Provides increased control and efficiency in managing signal flow.

Maximum Drain Current (Abs) (ID): 0.17 A

Handles current flow effectively, ensuring stable performance under load.

No. of Terminals: 3

Provides essential connection points for circuit integration, offering flexibility in design.

Maximum Power Dissipation (Abs): 0.225 W

Efficiently manages power consumption and heat dissipation, promoting long-term reliability.

Package Style (Meter): SMALL OUTLINE

Facilitates compact and space-saving designs in electronic applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers improved performance and reliability compared to other transistor technologies.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in various environmental conditions, enhancing product durability.

Transistor Element Material: SILICON

Known for its stability and efficiency in electronic components.

Maximum Drain-Source On Resistance: 6 ohm

Provides low resistance for efficient signal flow and power transfer.

Terminal Position: DUAL

Allows for versatile and secure connections in circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) LBSS123LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Leshan Radio

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.17 A

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

LBSS123LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Leshan Radio

Leshan Radio Company, Ltd.(LRC) is a well-known electronic company located in Sichuan province, the center area of China western development. Head office and initial factories are in Leshan, a famous historic and cultural city. New factories and R&D centers are in Chengdu, capital city of Sichuan Province. Since its establishment in 1971, LRC has dedicated half a century to the R&D and manufacturing of semiconductor devices and has grown into a group company with several subsidiary and JV companies

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