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FDS9431A

Onsemi

FDS9431A by Onsemi

The Onsemi FDS9431A is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.5W at 150°C.

Median Price

$0.424

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4 parts In-Stock

1+ parts

$0.119

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$0.119

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4

$0.119

$0.119

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DigiKey

USA . 29,953 parts In-Stock

1+ parts

$1.250

100+ parts

$0.516

1k+ parts

$0.363

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29,953

$1.250

$0.516

$0.363

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Mouser Electronics

USA . 2,668 parts In-Stock

1+ parts

$1.250

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$0.517

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$1.250

$0.517

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Arrow

USA . 47,500 parts In-Stock

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$0.306

47,500

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Verical

USA . 47,500 parts In-Stock

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$0.424

47,500

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Chip1Stop

Japan . 15,000 parts In-Stock

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$0.307

15,000

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Element14

Singapore . 7,085 parts In-Stock

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$0.591

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$0.495

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Farnell

UK . 4,062 parts In-Stock

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$0.567

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$0.473

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Rochester

USA . 181 parts In-Stock

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$0.340

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$0.282

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$0.251

181

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Distributors (In-Stock)

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Digiode

USA . 1,225 parts In-Stock

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$0.329

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Mobius Materials

USA . 1,579 parts In-Stock

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$0.356

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$0.283

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Nova Conductors

Japan . 36 parts In-Stock

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$1.000

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$1.000

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TME

Poland . 2,000 parts In-Stock

1+ parts

$1.170

100+ parts

$0.504

1k+ parts

$0.341

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$0.327

2,000

$1.170

$0.504

$0.341

$0.327

Chip Stock

USA . 34,154 parts In-Stock

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Vyrian

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Partservice

France . 5,253 parts In-Stock

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$0.828

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$0.592

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$0.592

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$0.828

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$0.592

Micros sp.j. W. Kędra i J. Lic

Poland . 5,253 parts In-Stock

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100+ parts

$0.887

1k+ parts

$0.635

10k+ parts

$0.635

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$0.887

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$0.635

Flip Electronics

USA . 5,000 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.439

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Micros

Poland . 4,470 parts In-Stock

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$0.593

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4,470

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Bristol Electronics

USA . 3,888 parts In-Stock

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Tectiva GmbH

Germany . 3,361 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,612 parts In-Stock

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Prism Electronics

USA . 2,474 parts In-Stock

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Sogenti Electronics

Canada . 2,461 parts In-Stock

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Lantek

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Goldney Electronics S.L.

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Semi Source

USA . 1,463 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,420 parts In-Stock

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Electronic Expediters

USA . 497 parts In-Stock

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497

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ECAB

Sweden . 285 parts In-Stock

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Atlantic Semiconductor

USA . 267 parts In-Stock

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Euro-Tech

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ACDS - Activité Composants Distribution Service

France . 126 parts In-Stock

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Sensible Micro Corp

USA . 80 parts In-Stock

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$0.526

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$0.486

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LWI Electronics Inc

India . 11 parts In-Stock

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Semicontronic

India . 6,603 parts In-Stock

1+ parts

$0.252

100+ parts

$0.246

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$0.244

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6,603

$0.252

$0.246

$0.244

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Ampacity Inc.

Singapore . 6,592 parts In-Stock

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$0.252

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6,592

$0.252

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Corohmni

South Africa . 484 parts In-Stock

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$0.296

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Corphita

USA . 1,303 parts In-Stock

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$0.311

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Argo Parts USA

USA . 4,610 parts In-Stock

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$0.410

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$0.397

4,610

$0.410

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$0.397

Aztec Data Supply Inc.

USA . 3,204 parts In-Stock

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$0.509

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$0.509

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Component Stockers USA

USA . 24,306 parts In-Stock

1+ parts

$0.870

100+ parts

$0.520

1k+ parts

$0.380

10k+ parts

$0.260

24,306

$0.870

$0.520

$0.380

$0.260

Netroflash

USA . 500 parts In-Stock

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$1.000

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500

$1.000

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Microchip USA

USA . 3,913 parts In-Stock

1+ parts

$14.680

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$14.470

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$14.370

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$14.260

3,913

$14.680

$14.470

$14.370

$14.260

RC Electronics

USA . 98,425 parts In-Stock

1+ parts

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$0.470

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$0.430

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$0.420

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$0.420

Perfect Parts

USA . 44,262 parts In-Stock

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Robosynatics

Brazil . 24,856 parts In-Stock

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$0.829

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$0.812

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$0.812

24,856

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$0.829

$0.812

$0.812

Lucentia Tech

USA . 24,856 parts In-Stock

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$0.829

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$0.812

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$0.812

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$0.829

$0.812

$0.812

Lixinc

USA . 15,523 parts In-Stock

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Glotronic Ltd.

UK . 10,000 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,320 parts In-Stock

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TANS Electronics

Latvia . 3,945 parts In-Stock

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Infinite Electronics LLP (Excess)

. 2,504 parts In-Stock

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GreenTree Electronics

Israel . 2,242 parts In-Stock

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Supply Digital

USA . 2,163 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 1,999 parts In-Stock

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Assy Fe

Spain . 1,928 parts In-Stock

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Continental Prestige Electronics

USA . 1,300 parts In-Stock

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$0.570

1k+ parts

$0.447

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$0.570

$0.447

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UHIMA Technologies

Türkiye . 492 parts In-Stock

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492

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Cyclops Electronics Ltd (Excess)

UK . 480 parts In-Stock

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Computer Components Inc. - USA

USA . 288 parts In-Stock

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Problanco Electronics

Mexico . 177 parts In-Stock

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Overview

Unlock the potential of your electronic applications with the FDS9431A by Onsemi. Crafted from high-quality materials and boasting a single configuration with a built-in diode, this P-channel field effect transistor is perfect for switching operations. With a maximum drain current of 3.5 A and a low on-resistance of 0.22 ohm, this transistor offers superior performance and reliability. Whether you're working on power management or battery charging systems, the FDS9431A provides unmatched value and efficiency, making it the ideal choice for your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for small signal FETs, providing good insulation and durability.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for low on-state resistance and fast switching speeds.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse current.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Surface Mount: YES

Easy to mount on a PCB, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating range for low voltage applications.

Terminal Form: GULL WING

Gull wing terminals are well-suited for surface mount technology, enhancing solder joint reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and easy gate control for improved efficiency.

Maximum Drain Current (Abs) (ID): 3.5 A

Capable of handling high current loads, suitable for various switching applications.

No. of Terminals: 8

Provides flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 2.5 W

Can dissipate heat effectively, ensuring reliable operation under high power conditions.

Package Style (Meter): SMALL OUTLINE

Compact size is ideal for space-constrained applications and allows for high-density PCB layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Common technology known for low input capacitance and high switching speeds.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its stable electrical properties.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance.

Maximum Drain-Source On Resistance: 0.22 ohm

Low on-resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal configuration allows for versatile mounting options and easy connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient duration during assembly processes.

Peak Reflow Temperature °C: 260

Can handle high peak reflow temperatures common in surface mount assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS9431A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.22 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS9431A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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