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FDS9412

Onsemi

FDS9412 by Onsemi

FDS9412 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 7.9A and 0.022 ohm Drain-Source On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.

Median Price

$0.293

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Rochester

USA . 116,238 parts In-Stock

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-

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$0.317

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$0.263

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$0.235

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$0.317

$0.263

$0.235

DigiKey

USA . 116,238 parts In-Stock

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$0.270

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$0.270

Verical

USA . 109,500 parts In-Stock

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$0.293

109,500

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$0.293

Distributors (In-Stock)

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Digiode

USA . 2,890 parts In-Stock

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$0.247

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2,890

$0.247

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Vyrian

USA . 986 parts In-Stock

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$0.260

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986

$0.260

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Chip Stock

USA . 33,826 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,818 parts In-Stock

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R&J Components

USA . 3,664 parts In-Stock

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Resion

USA . 2,100 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,312 parts In-Stock

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Prism Electronics

USA . 328 parts In-Stock

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Electronics Depot

USA . 115 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,238 parts In-Stock

1+ parts

$0.234

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$0.234

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Corohmni

South Africa . 381 parts In-Stock

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$0.260

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381

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Component Stockers USA

USA . 128,439 parts In-Stock

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$0.270

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$0.250

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$0.230

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$0.230

128,439

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$0.250

$0.230

$0.230

Native Components

USA . 193 parts In-Stock

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$0.957

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Northwest PG Solutions

USA . 54 parts In-Stock

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$1.053

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54

$1.053

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Continental Prestige Electronics

USA . 116,238 parts In-Stock

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$0.310

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 8,922 parts In-Stock

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TANS Electronics

Latvia . 5,640 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,818 parts In-Stock

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Problanco Electronics

Mexico . 1,650 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Supply Digital

USA . 942 parts In-Stock

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UHIMA Technologies

Türkiye . 860 parts In-Stock

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GreenTree Electronics

Israel . 300 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Overview

Unlock the power of innovation with the FDS9412 by Onsemi, a cutting-edge Small Signal Field Effect Transistor designed to elevate your electronic projects to new heights. Manufactured by Onsemi, a trusted industry leader known for their commitment to quality and reliability, this N-CHANNEL transistor offers superior performance in switching applications. With its single configuration and built-in diode, this transistor provides seamless functionality and efficiency. Whether you're building a new project or upgrading an existing one, the FDS9412 delivers unmatched value, benefits, and advantages that will exceed your expectations. Elevate your electronics with the FDS9412 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in high power applications and are known for their efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 30 V

Provides a good margin of safety for the transistor in various operating conditions.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical stability and ease of soldering during PCB assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low leakage current, improving overall performance.

Maximum Drain Current (ID): 7.9 A

Capable of handling high current loads, making it suitable for many applications.

Maximum Power Dissipation (Abs): 2.5 W

With a high power dissipation capability, this transistor can handle significant power without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB and allows for denser circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in signal processing applications.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high reliability and efficiency in electronic circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term reliability.

Maximum Drain-Source On Resistance: 0.022 ohm

Low on-resistance helps in minimizing power loss and improving efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and easier connectivity with other components.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS9412 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.9 A

Maximum Drain Current (ID):

7.9 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS9412 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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