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ZXMS6005SGTA

Diodes Incorporated

ZXMS6005SGTA by Diodes Incorporated

ZXMS6005SGTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.25 ohm Drain-Source On Resistance, and 1.6W Power Dissipation. Ideal for ENHANCEMENT MODE operations in small outline packages with GULL WING terminals.

Median Price

$1.368

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,440 parts In-Stock

1+ parts

$1.167

100+ parts

$0.650

1k+ parts

$0.508

10k+ parts

$0.465

2,440

$1.167

$0.650

$0.508

$0.465

Mouser Electronics

USA . 4,512 parts In-Stock

1+ parts

$1.570

100+ parts

$0.659

1k+ parts

$0.453

10k+ parts

$0.375

4,512

$1.570

$0.659

$0.453

$0.375

DigiKey

USA . 4,178 parts In-Stock

1+ parts

$1.570

100+ parts

$0.661

1k+ parts

$0.460

10k+ parts

$0.375

4,178

$1.570

$0.661

$0.460

$0.375

Newark

USA . 211 parts In-Stock

1+ parts

$1.750

100+ parts

$0.839

1k+ parts

$0.697

10k+ parts

-

211

$1.750

$0.839

$0.697

-

Verical

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.420

10k+ parts

-

13,000

-

-

$0.420

-

Element14

Singapore . 5,060 parts In-Stock

1+ parts

-

100+ parts

$0.821

1k+ parts

$0.599

10k+ parts

$0.576

5,060

-

$0.821

$0.599

$0.576

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.495

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.495

-

-

-

Vyrian

USA . 6,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,876

-

-

-

-

Rutronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.547

10k+ parts

$0.467

5,000

-

-

$0.547

$0.467

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.533

10k+ parts

-

4,000

-

-

$0.533

-

IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.989

10k+ parts

$0.673

2,000

-

-

$0.989

$0.673

Chip Stock

USA . 1,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,125

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Decca Corp

Germany . 6,925 parts In-Stock

1+ parts

$0.319

100+ parts

$0.313

1k+ parts

$0.309

10k+ parts

-

6,925

$0.319

$0.313

$0.309

-

Semicontronic

India . 6,865 parts In-Stock

1+ parts

$0.319

100+ parts

$0.311

1k+ parts

$0.309

10k+ parts

-

6,865

$0.319

$0.311

$0.309

-

Ampacity Inc.

Singapore . 6,776 parts In-Stock

1+ parts

$0.319

100+ parts

-

1k+ parts

-

10k+ parts

-

6,776

$0.319

-

-

-

Argo Parts USA

USA . 4,869 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

-

10k+ parts

$0.446

4,869

$0.460

-

-

$0.446

Modulus Dynamics

Lithuania . 6,912 parts In-Stock

1+ parts

$0.474

100+ parts

$0.474

1k+ parts

$0.474

10k+ parts

-

6,912

$0.474

$0.474

$0.474

-

Corohmni

South Africa . 352 parts In-Stock

1+ parts

$0.474

100+ parts

-

1k+ parts

-

10k+ parts

-

352

$0.474

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.495

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.495

-

-

-

Aztec Data Supply Inc.

USA . 213 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

-

10k+ parts

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213

$0.940

-

-

-

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$2.120

100+ parts

$1.929

1k+ parts

$1.738

10k+ parts

-

300

$2.120

$1.929

$1.738

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Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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27,860

-

-

-

-

GreenTree Electronics

Israel . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

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9,000

-

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Lixinc

USA . 5,278 parts In-Stock

1+ parts

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5,278

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Perfect Parts

USA . 4,480 parts In-Stock

1+ parts

-

100+ parts

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4,480

-

-

-

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Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.554

10k+ parts

-

1,000

-

-

$0.554

-

Continental Prestige Electronics

USA . 786 parts In-Stock

1+ parts

-

100+ parts

$0.559

1k+ parts

$0.428

10k+ parts

-

786

-

$0.559

$0.428

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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500

-

-

-

-

Overview

Enhance your electronic designs with the ZXMS6005SGTA by Diodes Incorporated. This high-quality N-channel field-effect transistor offers reliable switching capabilities, making it ideal for a wide range of applications. With a maximum power dissipation of 1.6W and a minimum DS breakdown voltage of 60V, this enhancement mode transistor provides exceptional performance in a compact small outline package. Trust Diodes Incorporated for innovative semiconductor solutions that deliver value and benefits to customers worldwide. Upgrade your projects with the ZXMS6005SGTA and experience enhanced efficiency and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, allowing for faster switching speeds and better performance in high-frequency applications.

Configuration: SINGLE

Single configuration FETs are easier to control and integrate into circuits, making them a reliable choice for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers precise control and efficient power management in electronics.

Surface Mount: YES

With surface mount capabilities, this FET can be easily mounted on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle high voltages, providing reliability and protection in demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on PCBs, optimizing space usage and facilitating heat dissipation.

Terminal Form: GULL WING

Gull wing terminals provide secure connections, reducing the risk of disconnection and ensuring stable performance in various operating conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer improved control over the switching process, enhancing overall performance and reliability in electronic systems.

No. of Terminals: 4

With four terminals, this FET offers versatile connectivity options and can be easily integrated into different circuit configurations.

Maximum Power Dissipation (Abs): 1.6 W

The maximum power dissipation of 1.6W ensures efficient heat management, preventing overheating and extending the lifespan of the FET.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this FET suitable for compact electronic devices, offering a space-saving solution without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability, making this FET suitable for a wide range of applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this FET can withstand high temperatures, ensuring stable performance in harsh environments.

Transistor Element Material: SILICON

Silicon-based transistors offer high efficiency and reliability, making this FET a suitable choice for demanding electronic applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a durable and corrosion-resistant surface, ensuring long-term reliability and stable connections.

Maximum Drain-Source On Resistance: 0.25 ohm

With a low drain-source on resistance of 0.25 ohms, this FET offers efficient power management and minimizes power loss in electronic circuits.

Terminal Position: DUAL

Dual terminal positioning allows for flexible installation and connection options, making this FET versatile and suitable for various circuit designs.

Case Connection: SOURCE

Source case connection simplifies circuit design and assembly, providing a reliable and efficient grounding solution for the FET.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds at peak temperature, this FET ensures reliable solder connections and minimizes the risk of overheating during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables safe and efficient soldering processes, ensuring proper connections and reliable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6005SGTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6005SGTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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